Pressure sensor, and pressure sensor matrix array including same and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-11112318-B2
Application number	US-201816630028-A
Country	US
Kind code	B2
Filing date	May 10, 2018
Priority date	Jul 25, 2017
Publication date	Sep 7, 2021
Grant date	Sep 7, 2021

Abstract

The present invention relates to a pressure sensor, a pressure-sensor matrix array including the same, and a manufacturing method thereof, the pressure sensor including a first electrode, a conductive layer positioned on the first electrode and including a conductor, an active layer positioned on the conductive layer, being in contact with or being spaced apart from the conductive layer and including a polymer and a semiconductor dispersed in the polymer, and a second electrode positioned on the active layer. The pressure sensor and the pressure-sensor matrix array according to the present invention are capable of eliminating electrical crosstalk between pixels using a rectifying interface in a pressure sensor matrix having high sensitivity to resistance, thereby forming a high-resolution pressure sensor array, and moreover, processing costs and complexity are reduced, which is advantageous for industrial applications.

First claim

The invention claimed is:

1. A pressure sensor, comprising:
a first electrode;
a conductive layer positioned on the first electrode and including a conductor;
an active layer positioned on the conductive layer, being in contact with or being spaced apart from the conductive layer and including a polymer and a semiconductor dispersed in the polymer; and
a second electrode positioned on the active layer,
wherein the semiconductor is of an n-type and has a work function of 4 eV or less, and a work function of the conductive layer is 4.5 eV or more; or the semiconductor is of a p-type and has a work function of 4.5 eV or more, and the work function of the conductive layer is less than 4 eV.

2. The pressure sensor of claim 1 , wherein an interface between the conductive layer and the active layer is a rectifying interface using a Schottky junction.

3. The pressure sensor of claim 1 , wherein a surface of at least one selected from the group consisting of the conductive layer and the active layer has at least one shape selected from among flat, uneven, convex, concave, semicircular, elliptic and wavy shapes.

4. The pressure sensor of claim 1 , wherein the conductor comprises a core including a polymer and a shell including a conductive material applied on the core.

5. The pressure sensor of claim 4 , wherein the polymer included in each of the conductive layer and the active layer independently comprises at least one selected from the group consisting of polystyrene (PS), polyethylene (PE), polypropylene (PP), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polytrimethylene terephthalate (PTT), polyimide (PI), polyamide (PA), polyurethane (PU), polyvinylidene fluoride (PVDF), polydimethylsiloxane (PDMS), polybutadiene (PB), polyurethane acrylate (PUA), styrene-butadiene block copolymer (SBR), and polyvinylidenefluoride-trifluoroethylene copolymer (PVDF-TrFE).

6. The pressure sensor of claim 4 , wherein the conductive material comprises at least one selected from the group consisting of PEDOT:PSS, gold (Au), nickel (Ni), cobalt (Co), iridium (Ir), aluminum (Al), silver (Ag), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), niobium (Nb), tantalum (Ta), hafnium (Hf), carbon nanotubes (CNTs), graphene, poly(3-hexylthiophene-2,5-diyl) (P3HT), and hydrogen-bonded diketopyrrolopyrrole (DPP).

7. The pressure sensor of claim 1 , wherein the semiconductor comprises at least one metal oxide selected from the group consisting of ZnO, TiO 2 , WO 3 , SnO 2 , NiO, CuO, Cr 2 O 3 , CrO 3 , CrO, CoO, Co 2 O 3 , and CO 3 O 4 .

8. The pressure sensor of claim 1 , wherein each of the first electrode and the second electrode independently comprises at least one selected from the group consisting of gold, silver, copper, platinum, palladium, nickel, indium, aluminum, iron, rhodium, ruthenium, osmium, cobalt, molybdenum, zinc, vanadium, tungsten, titanium, manganese, chromium, silver nanowires, carbon nanotubes (CNTs), and gold nanosheets.

9. The pressure sensor of claim 1 , wherein the polymer included in the conductive layer or the active layer is an elastomer.

10. A pressure-sensor matrix array, comprising:
a first electrode layer including a plurality of first electrodes, which are line-shaped and parallel to each other;
a second electrode layer including a plurality of second electrodes, which are line-shaped, parallel to each other and intersect the first electrodes;
a conductive layer positioned between the first electrodes and the second electrodes, formed on the first electrodes at positions corresponding to intersections of the first electrodes and the second electrodes, and including a conductor; and
an active layer positioned between the first electrodes and the second electrodes, formed on the second electrodes at positions corresponding to the intersections of the first electrodes and the second electrodes, being in contact with or being spaced apart from the conductive layer, and including a polymer and a semiconductor dispersed in the polymer.

11. The pressure-sensor matrix array of claim 10 , further comprising a flexible substrate on the first electrodes on a side opposite the conductive layer.

12. The pressure-sensor matrix array of claim 11 , wherein the flexible substrate comprises at least one selected from the group consisting of polyethylene (PE), polypropylene (PP), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polytrimethylene terephthalate (PTT), polyimide (PI), polyamide (PA), polyurethane (PU), polyvinylidene fluoride (PVDF), polydimethylsiloxane (PDMS), polybutadiene (PB), polyurethane acrylate (PUA), styrene-butadiene block copolymer (SBR), and polyvinylidenefluoride-trifluoroethylene copolymer (PVDF-TrFE).

13. A method of manufacturing a pressure sensor, comprising:
(a) forming a first electrode on a first substrate;
(b) forming a second electrode on a second substrate;
(c) forming a conductive layer including a conductor on the first electrode;
(d) forming an active layer including a polymer and a semiconductor dispersed in the polymer on the second electrode; and
(e) positioning the active layer of step (d) so as to be in contact with or be spaced apart from an upper surface of the conductive layer of step (c) to face each other,
wherein the semiconductor is of an n-type and has a work function of 4 eV or less, and a work function of the conductive layer is 4.5 eV or more; or the semiconductor is of a p-type and has a work function of 4.5 eV or more, and the work function of the conductive layer is less than 4 eV.

14. A method of manufacturing a pressure sensor, comprising:
(a) forming a first electrode on a first substrate;
(b) forming a second electrode on a second substrate;
(c) forming a conductive layer including a conductor on the first electrode;
(d) forming an active layer including a polymer and a semiconductor dispersed in the polymer on the conductive layer; and
(e) positioning the active layer of step (d) so as to be in contact with an upper surface of the second electrode of step (b),
wherein the semiconductor is of an n-type and has a work function of 4 eV or less, and a work function of the conductive layer is 4.5 eV or more; or the semiconductor is of a p-type and has a work function of 4.5 eV or more, and the work function of the conductive layer is less than 4 eV.

15. The method of claim 13 , wherein a surface of at least one selected from the group consisting of the conductive layer and the active layer has at least one shape selected from the group consisting of flat, uneven, convex, concave, semicircular, elliptic and wavy shapes.

16. The method of claim 13 , wherein the first substrate or the second substrate is a flexible substrate.

17. A method of manufacturing a pressure-sensor matrix array, comprising:
(a) forming a first electrode layer including a plurality of first electrodes, which are line-shaped and parallel to each other, on a first substrate;
(b) forming a second electrode layer including a plurality of second electrodes, which are line-shaped, parallel to each other and intersect the first electrodes, on a second substrate;
(c) forming a conductive layer including a conductor on the first electrodes at positions corresponding to intersections of the first electrodes and the second electrodes;
(d) forming an active layer including a polymer and a semiconductor dispersed in the polymer on the second electrodes at positions corresponding to the intersections of the first electrodes and the second electrodes; and
(e) positioning the active layer of step (d) so as to be

Assignees

• Postech Acad Ind Found

Inventors

• Unyong Jeong
• Insang You

Classifications

• G01L1/205 Primary

  using distributed sensing elements · CPC title

• G01L1/26

  Auxiliary measures taken, or devices used, in connection with the measurement of force, e.g. for preventing influence of transverse components of force, for preventing overload · CPC title

• G01L1/20

  by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids (of piezo-resistive materials G01L1/18); by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress · CPC title

• H10N30/05

  Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes · CPC title

• H10N30/87 Primary

  Electrodes or interconnections, e.g. leads or terminals · CPC title