Method and system for growth of graphene nanostripes by plasma enhanced chemical vapor deposition

Patent metadata

Field	Value
Publication number	US-11111584-B2
Application number	US-201916659339-A
Country	US
Kind code	B2
Filing date	Oct 21, 2019
Priority date	Sep 26, 2017
Publication date	Sep 7, 2021
Grant date	Sep 7, 2021

Abstract

A method of forming vertical graphene nanostripes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness includes providing a substrate, subjecting the substrate to a reduced pressure environment in a processing chamber, and providing methane gas and C6-containing precursor. The method also includes flowing the methane gas and the C6-containing precursor into the processing chamber, establishing a partial pressure ratio of the C6-containing precursor to methane gas in the processing chamber, and generating a plasma. The method further includes exposing at least a portion of the substrate to the methane gas, the C6-containing precursor, and the plasma and growing the vertical graphene nanostripes coupled to the at least a portion of the substrate, wherein the thickness of the vertical graphene nanostripes extends parallel to the substrate.

First claim

What is claimed is:

1. A method of forming vertical graphene nanostripes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising:
providing a transition metal substrate;
subjecting the transition metal substrate to a reduced pressure environment in a processing chamber;
providing methane gas and a benzene ring precursor;
flowing the methane gas and the benzene ring precursor into the processing chamber;
establishing a partial pressure ratio of the benzene ring precursor to methane gas in the processing chamber, wherein the partial pressure ratio is between 0 and 3;
generating a plasma including benzene rings in the processing chamber;
thereafter, exposing the at least a portion of the transition metal substrate to the methane gas, the benzene rings, and the plasma; and
growing the vertical graphene nanostripes coupled to the at least a portion of the transition metal substrate, wherein one or more of the vertical graphene nanostripes are characterized by the thickness measured parallel to the transition metal substrate, the length extending parallel to the transition metal substrate in a first direction, and the width extending orthogonal to the transition metal substrate in a second direction, and an aspect ratio of the length to the width ranging from 10:1 to 130:1.

2. The method of claim 1 wherein the partial pressure ratio is between 1 and 2.

3. The method of claim 1 wherein exposing the at least a portion of the transition metal substrate to the methane gas, the benzene rings, and the plasma is performed concurrently with growing the vertical graphene nanostripes.

4. The method of claim 1 wherein the benzene ring precursor comprises a single benzene ring.

5. The method of claim 4 wherein growing the vertical graphene nanostripes coupled to the at least a portion of the transition metal substrate comprises bonding of the single benzene ring to the transition metal substrate with carbon atoms of the single benzene ring aligned with the length and the width of the vertical graphene nanostripes.

6. The method of claim 5 wherein growing the vertical graphene nanostripes coupled to the at least a portion of the transition metal substrate further comprises bonding of additional benzene rings to previously bonded benzene rings with carbon atoms of the additional benzene rings aligned with the length and the width of the vertical graphene nanostripes.

7. The method of claim 1 wherein the benzene ring precursor comprises 1,2-dichlorobenzene (1,2-DCB) gas.

8. The method of claim 1 further comprising generating CN radicals, nitrogen radicals, nitrogen oxide radicals, carbon oxides, or carbon oxide radicals in the processing chamber concurrently with:
providing methane gas;
exposing the at least a portion of the transition metal substrate to the methane gas, the benzene rings, and the; and
growing the vertical graphene nanostripes.

9. A method of forming vertical graphene nanostripes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising:
providing a transition metal substrate;
subjecting the transition metal substrate to a reduced pressure environment in a processing chamber;
providing methane gas and a carbon containing precursor including a single benzene ring;
flowing the methane gas and the carbon containing precursor including the single benzene ring into the processing chamber;
establishing a partial pressure ratio of the carbon containing precursor including the single benzene ring to methane gas in the processing chamber;
generating a plasma including a plurality of single benzene rings;
exposing at least a portion of the transition metal substrate to the methane gas, the plurality of single benzene rings, and the plasma; and
growing the vertical graphene nanostripes coupled to the at least a portion of the transition metal substrate, wherein the thickness of the vertical graphene nanostripes extends parallel to the transition metal substrate.

10. The method of claim 9 wherein the partial pressure ratio ranges from 0 to 3.

11. The method of claim 10 wherein the partial pressure ratio is between 1 and 2.

12. The method of claim 9 wherein the carbon containing precursor including the single benzene ring comprises 1,2-dichlorobenzene (1,2-DCB) gas.

13. The method of claim 9 wherein exposing the at least a portion of the transition metal substrate to the methane gas, the carbon containing precursor, and the plasma is performed concurrently with growing the vertical graphene nanostripes.

14. The method of claim 9 wherein growing the vertical graphene nanostripes coupled to the at least a portion of the transition metal substrate comprises bonding of the single benzene rings to the transition metal substrate with carbon atoms of the single benzene rings aligned with the length and the width of the vertical graphene nanostripes.

15. The method of claim 14 wherein growing the vertical graphene nanostripes coupled to the at least a portion of the transition metal substrate further comprises bonding of additional single benzene rings to previously bonded benzene rings with carbon atoms of the additional single benzene rings aligned with the length and the width of the vertical graphene nanostripes.

16. The method of claim 9 further comprising providing hydrogen gas and generating HCl in the processing chamber concurrently with:
exposing the at least a portion of the transition metal substrate to the methane gas, the carbon containing precursor, and the plasma; and
growing the vertical graphene nanostripes.

17. The method of claim 9 further comprising generating CN radicals, nitrogen radicals, nitrogen oxide radicals, carbon oxides, or carbon oxide radicals in the processing chamber concurrently with:
providing a gas including nitrogen;
exposing the at least a portion of the transition metal substrate to the methane gas, the gas including nitrogen, the carbon containing precursor, and the plasma; and
growing the vertical graphene nanostripes.

18. The method of claim 9 wherein the one or several monolayers consist of one monolayer.

19. The method of claim 9 wherein the length extends parallel to the transition metal substrate in a direction orthogonal to the thickness, the width extends orthogonal to the transition metal substrate, and an aspect ratio of the length to the width ranges from 10:1 to 130:1.

20. The method of claim 9 further comprising generating C 2 radicals during exposing the at least a portion of the transition metal substrate to the methane gas, the plurality of single benzene rings, and the plasma.

Assignees

• California Inst Of Techn

Inventors

• Yeh Nai-Chang
• Hsu Chen-Chih

Classifications

• C23C16/26 Primary

  Deposition of carbon only · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• C01B2204/06

  Graphene nanoribbons · CPC title

• C01B7/01

  Chlorine; Hydrogen chloride · CPC title

• C01B32/186 Primary

  by chemical vapour deposition [CVD] · CPC title