High-Precision Shadow-Mask-Deposition System and Method Therefor
US-2017342542-A1 · Nov 30, 2017 · US
US11101451B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11101451-B2 |
| Application number | US-201815968443-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 1, 2018 |
| Priority date | May 1, 2017 |
| Publication date | Aug 24, 2021 |
| Grant date | Aug 24, 2021 |
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Shadow masks comprising a multi-layer membrane having a mechanical pre-bias that compensates the effect of gravity on the membrane are disclosed. A shadow mask in accordance with the present disclosure includes a membrane that is patterned with a desired pattern of apertures. The layers of the membrane are selected such that their residual stresses collectively give rise to a stress gradient that is directed normal to the plane of the membrane such that the stress gradient mitigates gravity-induced sag. In some embodiments, the membrane includes a layer pair having internal stresses that are of opposite signs to effect a tendency to bulge outward from the plane of the membrane prior to its release from the substrate. An exemplary membrane includes a layer pair comprising a layer of stoichiometric silicon dioxide that is under residual compressive stress and a layer of stoichiometric silicon nitride that is under residual tensile stress.
Opening claim text (preview).
What is claimed is: 1. A method comprising forming a shadow mask, wherein the shadow mask comprises a membrane having a first lateral dimension, and wherein the membrane is formed by operations that include: providing a substrate that defines a first plane; forming a composite layer on the substrate, the composite layer including: a first layer comprising a first material, the first layer having a first thickness and a first residual stress, wherein the first layer is characterized by a fracture stress that is based on the first lateral dimension, and wherein the first residual stress is greater than the fracture stress; and a second layer comprising a second material, the second layer having a second thickness and a second residual stress, wherein the second residual stress at least partially compensates the first residual stress such that the composite layer is characterized by an effective residual stress that is lower than the fracture stress; defining an aperture pattern in a first region of the composite layer, wherein the aperture pattern includes at least one aperture, and wherein the at least one aperture extends completely through both of the first and second layers; and forming a cavity in the substrate, wherein the cavity is formed after the formation of the composite layer, and wherein the formation of the cavity releases the first region of the composite layer to define the membrane; wherein the first residual stress and second residual stress collectively define a stress gradient in the composite layer that is directed along a first direction that is normal to the first plane. 2. The method of claim 1 further comprising: aligning the shadow mask and a target substrate having a first surface that defines a second plane, wherein, when the shadow mask and target substrate are aligned, the first plane and second plane are substantially parallel and the stress gradient mitigates the force of gravity on the membrane; and depositing a third material on the target substrate through both of the first and second layers to form a material pattern on the first surface, the material pattern being based on the aperture pattern. 3. The method of claim 1 further comprising forming the first layer such that the first material is stoichiometric silicon nitride and the first residual stress is a tensile stress having a magnitude of approximately 1 GPa. 4. The method of claim 3 further comprising forming the second layer such that the second material is stoichiometric silicon dioxide. 5. The method of claim 1 wherein the composite layer is formed such that the first residual stress is tensile and the second residual stress is compressive. 6. The method of claim 1 wherein the composite layer is formed such that the first residual stress and the second residual stress are compressive. 7. The method of claim 1 wherein the composite layer is formed such that the first residual stress and the second residual stress are tensile. 8. The method of claim 1 wherein the composite layer is formed such that the plurality of layers includes a third layer. 9. The method of claim 1 wherein the stress gradient induces a first bending moment in the composite layer, and wherein the first bending moment is substantially equal to a second bending moment in the composite layer that is based on the force of gravity on the membrane, and further wherein the first and second bending moments are directed in opposite directions. 10. The method of claim 1 wherein the first thickness, second thickness, first residual stress, and second residual stress are selected such that the stress gradient induces a first bending moment in the composite layer that has a magnitude sufficient to induce a curvature of the membrane. 11. The method of claim 1 wherein the second layer is formed on the first layer while the first layer is characterized by its as-deposited residual stress.
Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title
Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title
using masks · CPC title
Masking devices (stencils B05C17/06; masking devices for which the means for applying liquids or other fluent material is spraying or is not important B05B12/20) · CPC title
Stencils (B05C17/04 takes precedence; stencils used in connection with printing plates or foils B41N1/24; drawing accessories B43L13/00) · CPC title
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