Storage element

Patent metadata

Field	Value
Publication number	US-11101430-B2
Application number	US-201916531345-A
Country	US
Kind code	B2
Filing date	Aug 5, 2019
Priority date	Aug 8, 2018
Publication date	Aug 24, 2021
Grant date	Aug 24, 2021

Abstract

A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.

First claim

What is claimed is:

1. A phase-change storage element comprising, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm, the element comprising a second portion crossing at least certain layers in the stack, made of an alloy of at least a portion of the components of the layers in the stack;
wherein the material of the second portion is a phase-change material.

2. The element of claim 1 , wherein the stack comprises at least two assemblies of layers made of different materials.

3. The element of claim 1 , wherein the layers in the stack are made of a chemical element or of an alloy of chemical elements from groups 13, 14, 15, and 16 of the periodic table of elements.

4. The element of claim 1 , wherein the stack comprises an alternation of first and of second layers, the first and second layers being made of different materials.

5. The element of claim 4 , wherein the first layers are made of an alloy made up of germanium, antimony, and tellurium, and the second layers are made of antimony or of germanium.

6. The element of claim 1 , wherein a material of each layer in the stack has stoichiometric proportions.

7. The element of claim 1 , wherein proportions of the material of the second portion are not stoichiometric.

8. The element of claim 1 , wherein the first and second portions are separated by a skin made of a material of one of the layers in the stack.

9. The element of claim 1 , comprising a resistive element in contact with the second portion.

10. The element of claim 1 , wherein layers of an assembly of layers of the stack are doped.

11. The element of claim 10 , wherein the layers of the assembly of layers are doped with one or a plurality of dopants among nitrogen, carbon, and silicon.

12. The element of claim 10 , wherein the doping of the layers of the layer assembly is gradual.

13. A phase-change memory cell comprising the storage element of claim 1 .

14. A method of manufacturing a storage element comprising forming a stack of amorphous layers, a thickness of each layer being smaller than or equal to 5 nm, the storage element comprising a second portion crossing at least certain layers in the stack, made of an alloy of at least part of the components of the layers in the stack;
wherein the material of the second portion is a phase-change material.

15. The method of claim 14 , comprising a step of heating a portion of the stack, so that the portion comprises an alloy of at least part of the components of the layers in the stack.

16. The element of claim 11 , wherein the doping of the layers of the layer assembly is gradual.

Assignees

• Commissariat Energie Atomique

Inventors

• Navarro Gabriele
• Bernard Mathieu
• Cyrille Marie-Claire
• Sabbione Chiara

Classifications

• H10B63/10

  Phase change RAM [PCRAM, PRAM] devices · CPC title

• G11C13/0004

  comprising amorphous/crystalline phase transition cells · CPC title

• H01L45/1641

  Electricity · mapped topic

• H01L45/144

  Electricity · mapped topic

• H01L27/24

  Electricity · mapped topic