Method for the production of a single-crystal film, in particular piezoeletric

Patent metadata

Field	Value
Publication number	US-11101428-B2
Application number	US-201616064416-A
Country	US
Kind code	B2
Filing date	Dec 21, 2016
Priority date	Dec 22, 2015
Publication date	Aug 24, 2021
Grant date	Aug 24, 2021

Abstract

A method of manufacturing a monocrystalline layer, comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O3 on piezoelectric material ABO3 of the seed layer where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

First claim

The invention claimed is:

1. A method of manufacturing a monocrystalline layer, comprising the following successive steps:
providing a donor substrate comprising a piezoelectric material of composition ABO 3 , wherein A consists of at least one element selected from the group consisting of Li, Na, K, and H; and wherein B consists of at least one element selected from the group consisting of Nb, Ta, Sb, and V;
bonding the donor substrate onto a receiver substrate such that a seed layer of the donor substrate is at a bonding interface, the seed layer having the composition ABO 3 ;
thinning the donor substrate to expose the seed layer;
growing, by epitaxy on the seed layer, a monocrystalline layer of composition A′B′O 3 , wherein A′ consists of at least one element selected from the group consisting of Li, Na, K, and H; wherein B′ consists of at least one element selected from the group consisting of Nb, Ta, Sb, and V; and wherein A′ is different from A or B′ is different from B.

2. The method of claim 1 , wherein A′ includes at least one element in common with A, and/or B′ includes at least one element in common with B.

3. The method of claim 1 , wherein A′ is identical to A and B′ is different from B, or B′ is identical to B and A′ is different from A.

4. The method of claim 1 , wherein A consists of a single element and B consists of a single element.

5. The method of claim 1 , further comprising:
prior to bonding the donor substrate onto the receiver substrate, forming an embrittlement area in the donor substrate; and
after bonding the donor substrate onto the receiver substrate and before thinning the donor substrate, detaching a portion of the donor substrate along the embrittlement area so as to leave a remaining portion of the donor substrate bonded onto the receiver substrate.

6. The method of claim 5 , wherein thinning the donor substrate to expose the seed layer comprises thinning the remaining portion of the donor substrate to expose the seed layer.

7. The method of claim 1 , wherein a thickness of the seed layer is less than 2 μm.

8. The method of claim 1 , wherein the receiver substrate comprises a semiconductor material and includes a trap-rich intermediate layer between the seed layer and the receiver substrate.

9. The method of claim 1 , wherein, after the step of growing the monocrystalline layer of composition A′B′O 3 , a thickness of the monocrystalline layer of composition A′B′O 3 is less than 20 μm.

10. The method of claim 1 , further comprising providing at least one electrically insulating layer and/or at least one electrically conducting layer at the interface between the receiver substrate and the donor substrate.

11. The method of claim 1 , further comprising transferring at least a portion of the monocrystalline layer from the receiver substrate onto a final substrate.

12. The method of claim 1 , further comprising forming a surface acoustic wave device or a bulk acoustic wave device using the monocrystalline layer of composition A′B′O 3 .

13. The method of claim 1 , wherein A consists of at least one element selected from the group consisting of Na, K, and H; and wherein A′ consists of at least one element selected from the group consisting of Na, K, and H.

14. The method of claim 1 , wherein A consists of at least one element selected from the group consisting of Li, K, and H; and wherein A′ consists of at least one element selected from the group consisting of Li, K, and H.

15. The method of claim 1 , wherein A consists of at least one element selected from the group consisting of Li, Na, and H; and wherein A′ consists of at least one element selected from the group consisting of Li, Na, and H.

16. The method of claim 1 , wherein A consists of at least one element selected from the group consisting of Li, Na, and K; and wherein A′ consists of at least one element selected from the group consisting of Li, Na, and K.

17. The method of claim 1 , wherein B consists of at least one element selected from the group consisting of Ta, Sb, and V; and wherein B′ consists of at least one element selected from the group consisting of Ta, Sb, and V.

18. The method of claim 1 , wherein: B, wherein B consists of at least one element selected from the group consisting of Nb, Sb, and V; and wherein B′ consists of at least one element selected from the group consisting of Nb, Sb, and V.

19. The method of claim 1 , wherein B consists of at least one element selected from the group consisting of Nb, Ta, and V; and wherein B′ consists of at least one element selected from the group consisting of Nb, Ta, and V.

20. The method of claim 1 , wherein B consists of at least one element selected from the group consisting of Nb, Ta, and Sb; and wherein B′ consists of at least one element selected from the group consisting of Nb, Ta, and Sb.

Assignees

• Soitec Silicon On Insulator

Inventors

• Ghyselen Bruno
• Bethoux Jean-Marc

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• C01G35/00

  Compounds of tantalum · CPC title

• C01G33/00

  Compounds of niobium · CPC title

• C01G31/02

  Oxides · CPC title