Imaging element, laminated imaging element, and solid-state imaging device

Patent metadata

Field	Value
Publication number	US-11101303-B2
Application number	US-201816639406-A
Country	US
Kind code	B2
Filing date	May 11, 2018
Priority date	Aug 16, 2017
Publication date	Aug 24, 2021
Grant date	Aug 24, 2021

Abstract

An imaging element (photoelectric conversion element) includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, a composite oxide layer 23B containing indium-gallium-zinc composite oxide is formed. The composite oxide layer 23B includes a first layer 23B1 adjacent to the first electrode 21 and a second layer 23B2 adjacent to the photoelectric conversion layer 23A. The first layer 23B1 has a higher indium composition than the second layer 23B2, or the first layer 23B1 has a higher gallium composition than the second layer 23B2, or the first layer 23B1 has a higher zinc composition than the second layer 23B2.

First claim

The invention claimed is:

1. An imaging element comprising a photoelectric conversion unit formed by laminating a first electrode, a photoelectric conversion layer, and a second electrode,
between the first electrode and the photoelectric conversion layer, a composite oxide layer containing indium composite oxide is formed,
the composite oxide layer includes a first layer adjacent to the first electrode and a second layer adjacent to the photoelectric conversion layer, and
the first layer has a higher indium composition than the second layer.

2. A laminated imaging element comprising at least one of the imaging elements according to claim 1 .

3. A solid-state imaging device comprising a plurality of the imaging elements according to claim 1 .

4. A solid-state imaging device comprising a plurality of the laminated imaging elements according to claim 2 .

5. An imaging element comprising a photoelectric conversion unit formed by laminating a first electrode, a photoelectric conversion layer, and a second electrode, wherein
between the first electrode and the photoelectric conversion layer, a composite oxide layer containing indium-gallium-zinc composite oxide is formed,
the composite oxide layer includes a first layer adjacent to the first electrode and a second layer adjacent to the photoelectric conversion layer,
the first layer has a higher indium composition than the second layer, or
the first layer has a higher gallium composition than the second layer, or
the first layer has a higher zinc composition than the second layer.

6. The imaging element according to claim 5 , wherein
when the indium-gallium-zinc composite oxide is represented by (ZnO) X (Ga 2 O 3 ) 1-X , (Ga 2 O 3 ) Y (In 2 O 3 ) 1-Y , and (In 2 O 3 ) Z (ZnO) 1-Z ,
a value of X in the first layer is larger than a value of X in the second layer, or
a value of Y in the first layer is lower than a value of Y in the second layer, or
a value of Z in the first layer is higher than a value of Z in the second layer.

7. The imaging element according to claim 6 , satisfying 0<X<0.875, 0<Y<0.875, and 0.125<Z<0.875 (where X+Y+Z=1.000).

8. An imaging element comprising a photoelectric conversion unit formed by laminating a first electrode, a photoelectric conversion layer, and a second electrode, wherein
between the first electrode and the photoelectric conversion layer, a composite oxide layer containing indium composite oxide is formed,
the composite oxide layer includes a first layer adjacent to the first electrode and a second layer adjacent to the photoelectric conversion layer, and
the first layer has a higher carrier mobility than the second layer.

9. The imaging element according to claim 8 , satisfying 1×10 −6 ≤(carrier mobility of second layer)/(carrier mobility of first layer)≤0.1.

10. An imaging element comprising a photoelectric conversion unit formed by laminating a first electrode, a photoelectric conversion layer, and a second electrode, wherein
between the first electrode and the photoelectric conversion layer, a composite oxide layer containing indium composite oxide is formed,
the composite oxide layer includes a first layer adjacent to the first electrode and a second layer adjacent to the photoelectric conversion layer, and
the first layer has a lower state density than the second layer.

11. The imaging element according to claim 10 , wherein the composite oxide layer is amorphous.

12. The imaging element according to claim 10 , wherein the photoelectric conversion unit further includes an insulating layer and a charge accumulation electrode disposed apart from the first electrode so as to face the composite oxide layer via the insulating layer.

13. The imaging element according to claim 12 , further comprising a transfer control electrode disposed apart from the first electrode and the charge accumulation electrode so as to face the composite oxide layer via the insulating layer between the first electrode and the charge accumulation electrode.

14. The imaging element according to claim 12 , further comprising a charge discharge electrode connected to the composite oxide layer and disposed apart from the first electrode and the charge accumulation electrode.

15. The imaging element according to claim 12 , wherein the charge accumulation electrode includes a plurality of charge accumulation electrode segments.

Assignees

• Sony Corp
• Sony Semiconductor Solutions Corp

Inventors

• Ono Hideki
• Kaneda Yukio

Classifications

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H10K39/32

  Organic image sensors · CPC title

• H04N25/703 Primary

  SSIS architectures incorporating pixels for producing signals other than image signals · CPC title

• H10K39/15

  comprising both organic PV cells and inorganic PV cells · CPC title

• H10K30/353

  comprising blocking layers, e.g. exciton blocking layers · CPC title