Surface plasmon-optical-electrical hybrid conduction nano heterostructure and preparation method therefor

Patent metadata

Field	Value
Publication number	US-11099323-B2
Application number	US-201816978717-A
Country	US
Kind code	B2
Filing date	May 28, 2018
Priority date	Mar 7, 2018
Publication date	Aug 24, 2021
Grant date	Aug 24, 2021

Abstract

The present invention provides a surface plasmon-optical-electrical hybrid conduction nano heterostructure and a preparation method therefor. The structure includes an exciting light source, a semiconductor nano-structure array, a two-dimensional plasmonic micro-nano structure, a sub-wavelength plasmon polariton guided wave, an emergent optical wave, a one-dimensional plasmonic micro-nano structure, a wire, a metal electrode, a conductive substrate, a probe molecule, an atomic-force microscopic conductive probe and a voltage source. The method achieves a semiconductor seed crystal with controllable distribution and density by controlling free metal ions, air, water or oxygen on a metal substrate to achieve highly uniform control of the seed crystal, and then strictly controls a length-to-diameter ratio and distribution of a semiconductor structure by continuous growth. Therefore, a new nano optics platform is provided for studying various novel effects produced by interaction between light and substances.

First claim

What is claimed is:

1. A surface plasmon-optical-electrical hybrid conduction nano heterostructure, the structure comprising: an exciting light source, a semiconductor nano-structure array, a two-dimensional plasmonic micro-nanoplasmonic micro-nano structure, a sub-wavelength plasmon polariton guided wave, an emergent optical wave, a one-dimensional plasmonic micro-nanoplasmonic micro-nano structure, a wire, a metal electrode, a conductive substrate, a probe molecule, an atomic-force microscopic conductive probe and a voltage source, wherein the semiconductor nano-structure array is located on an upper surface of the two-dimensional plasmonic micro-nanoplasmonic micro-nano structure or an outer surface of the one-dimensional plasmonic micro-nanoplasmonic micro-nano structure and a tight Schottky contact is formed; the exciting light source vertically irradiates the upper surface of the two-dimensional plasmonic micro-nanoplasmonic micro-nano structure or the outer surface of the one-dimensional plasmonic micro-nanoplasmonic micro-nano structure; the probe molecule is located on a surface of the semiconductor nano-structure array, the sub-wavelength plasmon polariton guided wave is diffused on a surface of the two-dimensional plasmonic micro-nanoplasmonic micro-nano structure or the one-dimensional plasmonic micro-nanoplasmonic micro-nano structure, and the emergent optical wave is located on a pointed end of the semiconductor nano-structure array; in the two-dimensional plasmonic micro-nanoplasmonic micro-nano structure, an input end of the voltage source is connected to the atomic-force microscopic conductive probe by the wire, and an output end of the voltage source is connected to the conductive substrate by the wire; and in the one-dimensional plasmonic micro-nanoplasmonic micro-nano structure, the input end of the voltage source is connected to the conductive substrate, and the output end of the voltage source is connected to the metal electrode.

2. The surface plasmon-optical-electrical hybrid conduction nano heterostructure according to claim 1 , wherein the two-dimensional plasmonic micro-nanoplasmonic micro-nano structure and the one-dimensional plasmonic micro-nanoplasmonic micro-nano structure are anisotropic structures, wherein the anisotropic structures have a morphology of a triangular plate, a wire or a polyhedron, a size of 1-1000 μm, and a material of a one-dimensional or two-dimensional metal crystal material with a plasmonic effect, wherein the one-dimensional or two-dimensional metal crystal material with the plasmonic effect is gold, silver, copper, aluminum or platinum.

3. The surface plasmon-optical-electrical hybrid conduction nano heterostructure according to claim 1 , wherein a material of the conductive substrate is aluminum, tin, copper, iron or zinc.

4. The surface plasmon-optical-electrical hybrid conduction nano heterostructure according to claim 1 , wherein a semiconductor nano structure of the semiconductor nano-structure array is a one-dimensional semiconductor nano structure with a morphology of a nanorod, a nanocone or a nanotube, or a zero-dimensional, two-dimensional or complex helical crystal structure;
wherein the nanorod, the nanocone or the nanotube has a length of 1-1000 μm, a diameter of 0.1-1000 μm, and a spacing of 1-10000 nm; and
a material of the semiconductor nano structure is zinc oxide, titanium dioxide or aluminum oxide.

5. The surface plasmon-optical-electrical hybrid conduction nano heterostructure according to claim 1 , wherein a material of the metal electrode is gold, silver or platinum; and a material of the conductive substrate is a conductive carrier, wherein the conductive carrier is indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or graphite, and has a thickness of 100 nm to 10000 μm.

6. The surface plasmon-optical-electrical hybrid conduction nano heterostructure according to claim 1 , wherein a material of the probe molecule is Rhodamine 6G, 4-aminothiophenol (4-ATP) or 4-mercaptopyridine (4-MPY).

7. The surface plasmon-optical-electrical hybrid conduction nano heterostructure according to claim 1 , wherein the exciting light source is a single-wavelength light source or a broad spectrum light source with a wavelength range of 300-3000 nm covering an ultraviolet waveband to a mid-infrared waveband.

8. A preparation method for the surface plasmon-optical-electrical hybrid conduction nano heterostructure according to claim 1 , comprising the following steps:
step one: preparing a monocrystalline and density-controllable semiconductor seed crystal, comprising:
evenly coating a metallic active substrate with a layer of a plasmonic micro-nano structure solution, wherein the metallic active substrate is clean, air-drying the layer of the plasmonic micro-nano structure solution to obtain a plasmonic micro-nano structure evenly distributed on the metallic active substrate; evenly coating the metallic active substrate having the plasmonic micro-nano structure with a layer of deionized water, air-drying the layer of the deionized water to obtain a semiconductor seed crystal structure evenly distributed on the plasmonic micro-nano structure; controlling a distribution density and a morphology of the semiconductor seed crystal structure on the plasmonic micro-nano structure by selecting the metallic active substrate from metallic active substrates with different activities and an amount of the deionized water for coating; and
step two: growing semiconductor nanowires on the plasmonic micro-nano structure
directionally growing, by using a vapor deposition method or a solution deposition method, the semiconductor nanowires with a controllable density and an adjustable length-to-diameter ratio on a surface of the plasmonic micro-nano structure with the semiconductor seed crystal structure as a core, and obtaining a surface plasmon-optical-electrical hybrid conduction nano heterostructure platform formed by a metal and a semiconductor heterostructure; wherein
in the vapor deposition method, weighing a metal salt and placing the metal salt into a porcelain boat, placing the metallic active substrate in a center of a tube furnace, injecting high-purity N 2 , adjusting a temperature of a deposition chamber of the tube furnace to 100-700° C., reacting at a constant temperature for 0.5-10 h, and finally naturally cooling the temperature of the deposition chamber to a room temperature, to obtain a sample; and
in the solution deposition method, separately weighing a weak reducing agent, a surface capping agent and a metal salt to prepare a continuous growth solution, stirring the continuous growth solution at a low speed and heating the continuous growth solution to 60-80° C. to fully dissolve the continuous growth solution, stopping stirring the continuous growth solution, placing the metallic active substrate in the continuous growth solution, and keeping the temperature unchanged for 2-180 h; and finally taking the metallic active substrate out, and thoroughly rinsing impurities on a surface of the metallic active substrate, and air-drying the surface of the metallic active substrate.

9. The preparation method according to claim 8 , wherein a material of the metal salt is aluminum chloride, tin tetrachloride, ferric nitrate or zinc acetate.

10. The preparation method according to claim 8 , wherein a material of the weak reducing agent is ascorbic acid (AA), hydrogen peroxide (H 2 O 2 ) or hexamethylene tetramine (HTMA); and a material of the surface capping agent is polyethylenimine (PEI), triton X-100, or sodium bis(2-ethylhexyl) sulfosuccinate (AOT).

Assignees

• Univ Southeast

Inventors

• Zhang Xiaoyang
• Zhang Tong
• Wang Shanjiang
• Xue Xiaomei
• Zhou Huanli

Classifications

• G02B6/1226 Primary

  involving surface plasmon interaction · CPC title

• G02B5/008 Primary

  Surface plasmon devices (diffractive gratings with a pitch less than or comparable to the wavelength G02B5/1809; surface plasmons in integrated optics G02B6/1226; optical analysis of materials by means of surface plasmons G01N21/553) · CPC title

• G02B6/13

  Integrated optical circuits characterised by the manufacturing method · CPC title

• G02B6/132

  by deposition of thin films · CPC title

• G01Q60/40

  Conductive probes · CPC title