Organic transistor

Patent metadata

Field	Value
Publication number	US-11094890-B2
Application number	US-201816486163-A
Country	US
Kind code	B2
Filing date	Aug 20, 2018
Priority date	Sep 18, 2017
Publication date	Aug 17, 2021
Grant date	Aug 17, 2021

Abstract

The present specification relates to an organic transistor including: a source electrode; a drain electrode; a gate electrode; an insulating layer; and an organic semiconductor layer having one or more layers, in which one or more layers of the organic semiconductor layer include a compound represented by Formula 1.

First claim

What is claimed is:

1. An organic transistor comprising:
a source electrode;
a drain electrode;
a gate electrode;
an organic semiconductor layer comprising one or more layers; and
an insulating layer between the gate electrode and the organic semiconductor layer,
wherein the one or more layers of the organic semiconductor layer comprise a compound of Formula 3:

wherein:
Ra and Rb are the same as or different from each other, and are each independently a group which serves as an electron acceptor;
Y1 to Y5 are the same as or different from each other, and are each independently CRR′, NR, O, SiRR′, PR, S, GeRR′, Se, or Te;
Y6 is CRR′, NR, O, SiRR′, PR, S, GeRR′, Se, or Te;
n and m are each an integer from 0 to 5;
when n and m are each 2 or more, the structures in the parenthesis are the same as or different from each other; and
R1, R2, R11 to R14, R, and R′ are the same as or different from each other, and are each independently hydrogen, deuterium, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group.

2. The organic transistor of claim 1 , wherein the compound of Formula 3 is a compound of Formula 1-1:

wherein:
Y6 is CRR′, NR, O, SiRR′, PR, S, GeRR′, Se, or Te; and
Ra, Rb, Y1, R1, R2, R11 to R14, R, and R′ are the same as those defined in Formula 3.

3. The organic transistor of claim 1 , wherein the compound of Formula 3 is a compound of any one of structures:

4. The organic transistor of claim 1 , wherein Ra and Rb are the same as or different from each other, and are each any one of the following structures:

wherein:
c is an integer from 1 to 4;
when c is 2 or more, two or more structures in the parenthesis are the same as or different from each other; and
R20 to R23 are the same as or different from each other, and are each independently hydrogen, deuterium, a halogen group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group.

5. The organic transistor of claim 1 , wherein R1 and R2 are hydrogen.

6. The organic transistor of claim 1 , wherein the compound of Formula 3 is a compound of any one of Formulae 1-12, 1-13, 1-15 and 1-16:

wherein:
Y6 is CRR′, NR, O, SiRR′, PR, S, GeRR′, Se, or Te;
and
Y1 to Y5, R11 to R14, R, and R′ are the same as those defined in Formula 3.

7. The organic transistor of claim 1 , wherein Y1 to Y5 are S.

8. The organic transistor of claim 1 , wherein the compound of Formula 3 is a compound of Formula 1-2:

wherein:
Y6 is CRR′, NR, O, SiRR′, PR, S, GeRR′, Se, or Te; and
Ra, Rb, Y1 to Y5, R1, R2, R11 to R14, R, and R′ are the same as those defined in Formula 3.

Assignees

• Lg Chemical Ltd

Inventors

• Lim Bogyu
• Noh Yong-Young
• Lee Jiyoung
• Lee Seung-Hoon

Classifications

• H01L51/0071

  Electricity · mapped topic

• H01L51/0069 Primary

  Electricity · mapped topic

• H01L51/0558

  Electricity · mapped topic

• H10K85/113 Primary

  Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene · CPC title

• H10K85/656 Primary

  comprising two or more different heteroatoms per ring (H10K85/652 takes precedence) · CPC title