Neuromorphic device having a plurality of synapses blocks
US-2019019081-A1 · Jan 17, 2019 · US
Chemical vapor deposition of perovskite thin films
US11094881B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11094881-B2 |
| Application number | US-201816111558-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 24, 2018 |
| Priority date | Aug 25, 2017 |
| Publication date | Aug 17, 2021 |
| Grant date | Aug 17, 2021 |
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- Title
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Abstract
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Perovskite films are known to be useful in many different technologies, including solar panels and memristors. Most perovskites contain lead which is undesirable for many reasons. It has been found that bismuth can be used in place of lead in preparing perovskite thin films. Additionally, when chemical vapor deposition is used to prepare the films instead of traditional solution phase methods, the films show greatly improved performance in electronic applications. Additionally, the present disclosure is directed to the use of perovskites in memory devices.
First claim
Opening claim text (preview).
What is claimed is: 1. A memristor device comprising a methylammonium bismuth iodide (CH 3 NH 3 ) 3 Bi 2 I 9 perovskite film. 2. The memristor device according to claim 1 , wherein said perovskite film is prepared by atmospheric pressure chemical vapor deposition. 3. A resistive switching memory device comprising a MA 3 Bi 2 I 9 film. 4. The device of claim 3 , wherein the device includes an ON/OFF ratio of up to 10 3 . 5. The device of claim 3 , wherein the device has an SET voltage of about 0.15 V. 6. The device of claim 3 , wherein the device lasts for at least about 1,000 cycles. 7. The device of claim 3 , wherein the device comprises Al/MBI/Au.
Assignees
Inventors
Classifications
- C23C16/30Primary
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides · CPC title
- H01L45/1616Primary
Electricity · mapped topic
Electricity · mapped topic
Switching materials · CPC title
- H10N70/023Primary
by chemical vapor deposition, e.g. MOCVD, ALD · CPC title
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- What does patent US11094881B2 cover?
- Perovskite films are known to be useful in many different technologies, including solar panels and memristors. Most perovskites contain lead which is undesirable for many reasons. It has been found that bismuth can be used in place of lead in preparing perovskite thin films. Additionally, when chemical vapor deposition is used to prepare the films instead of traditional solution phase methods, …
- Who is the assignee on this patent?
- Banerjee Parag, Cheng Peifu, Chen Xiao, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C23C16/30. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Aug 17 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).