Radically curable composition and cured product thereof
US-2019002617-A1 · Jan 3, 2019 · US
US11094859B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11094859-B2 |
| Application number | US-201916546695-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 21, 2019 |
| Priority date | Sep 3, 2018 |
| Publication date | Aug 17, 2021 |
| Grant date | Aug 17, 2021 |
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Disclosed is a light emitting apparatus including: a first substrate having light transmissive property and flexibility with a conductive layer; a second substrate having light transmissive property and flexibility and arranged to face the first substrate; a plurality of light emitting elements including an electrode connected to the conductive layer and arranged between the first and second substrates; and a resin layer having light transmissive property and flexibility and arranged between the first and second substrates to hold the plurality of light emitting elements. A temperature for a maximum mechanical loss tangent tan δ in dynamic viscoelasticity of the resin layer is 117° C. or higher.
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The invention claimed is: 1. A light emitting apparatus comprising: a first substrate having light transmissive property and flexibility with a conductive layer; a second substrate having light transmissive property and flexibility and arranged to face the first substrate; a plurality of light emitting elements including an electrode connected to the conductive layer and arranged between the first and second substrates; and a resin layer having light transmissive property and flexibility and arranged between the first and second substrates to hold the plurality of light emitting elements, wherein, in the resin layer, a storage elastic modulus at 100° C. is −26% or more with respect to the storage elastic modulus at −50° C., and a loss elastic modulus peaks at 130° C. or higher, and as a general condition for providing no failure in a reliability test, a relationship between a peak temperature tan δ max at which a mechanical loss tangent tan δ is maximized in dynamic viscoelasticity of the resin layer and a difference (ΔTj) between a junction temperature (Tj) of the light emitting element and an environmental temperature (TM) satisfies the following formulas (1) and (2): tan δ max≥1.65Δ Tj+α×D (1), and α× D= 1.65× TM− 47.5 (2), where “TM” denotes the environmental temperature, “Tj” denotes the junction temperature, “D” denotes an integer, and “a” denotes a manufacturing variation factor in a thickness of the resin layer. 2. The light emitting apparatus according to claim 1 , wherein a temperature for a maximum mechanical loss tangent tan δ in dynamic viscoelasticity of the resin layer is 135° C. or higher. 3. The light emitting apparatus according to claim 2 , wherein the temperature for the maximum mechanical loss tangent tan δ is 180° C. or lower. 4. The light emitting apparatus according to claim 2 , wherein the mechanical loss tangent tan δ has a peak intensity of 1.01 or larger. 5. The light emitting apparatus according to claim 2 , wherein a decrease rate of the resin of the resin layer from an average value of a storage elastic modulus at 25° C. to an average value of a storage elastic modulus at 85° C. is 30.6% or lower within a humidity range of 25% to 85%. 6. The light emitting apparatus according to claim 1 , wherein a change amount of a mechanical loss tangent tan δ in dynamic viscoelasticity of the resin layer is “1.35E−02” or smaller within a humidity range of 20% or higher and 85% or lower. 7. The light emitting apparatus according to claim 6 , wherein the change amount of the mechanical loss tangent tan δ in the dynamic viscoelasticity of the resin layer is “9.05E−03” or smaller within a humidity range of 50% or higher and 85% or lower. 8. The light emitting apparatus according to claim 1 , wherein the resin layer has an expansion coefficient of smaller than 21.3% at a temperature of 85° C. and a humidity of 40% or higher and 0.45% or lower. 9. The light emitting apparatus according to claim 1 , wherein the resin layer has a bending stress of 65.71 MPa or more at a temperature of 85° C. and a distortion factor is 5.0%. 10. The light emitting apparatus according to claim 1 , wherein in the resin layer, the rate of change in bending stress from bending stress at a temperature of 25° C. to bending stress at a temperature of 85° C. is greater than −30.8% when a distortion factor is 5.0%. 11. A light emitting apparatus comprising: a first substrate having light transmissive property and flexibility with a conductive layer; a second substrate having light transmissive property and flexibility and arranged to face the first substrate; a plurality of light emitting elements including an electrode connected to the conductive layer and arranged between the first and second substrates; and a resin layer having light transmissive property and flexibility and arranged between the first and second substrates to hold the plurality of light emitting elements, wherein, in the resin layer, a storage elastic modulus at 100° C. is −26% or more with respect to the storage elastic modulus at −50° C., and a loss elastic modulus peaks at 130° C. or higher, and a relationship between a peak temperature tan δ max at which a mechanical loss tangent tan δ is maximized in dynamic viscoelasticity and a difference (ΔTj) between a junction temperature (Tj) of the light emitting element and an environmental temperature (TM) in the resin of the resin layer satisfies the following formulas (1) and (2): tan δ max≥1.65Δ Tj+α×D (1), and α× D= 1.65× TM− 47.5 (2), where “TM” denotes the environmental temperature, “Tj” denotes the junction temperature, “D” denotes an integer, and “α” denotes a manufacturing variation factor in a thickness of the resin layer.
Package configurations · CPC title
characterised by their material, e.g. epoxy or silicone resins · CPC title
Encapsulations · CPC title
Coatings, e.g. passivation layers or antireflective coatings · CPC title
characterised by their shape · CPC title
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