Electronic component including protective diode for electrostatic discharge protection

Patent metadata

Field	Value
Publication number	US-11094689-B2
Application number	US-201816649826-A
Country	US
Kind code	B2
Filing date	Sep 20, 2018
Priority date	Sep 25, 2017
Publication date	Aug 17, 2021
Grant date	Aug 17, 2021

Abstract

An electronic component includes a first contact point for n-side contacting, a second contact point for p-side contacting, and a protective diode, which is connected antiparallel to the first contact point and to the second contact point. The protective diode includes a first diode structure which is p-conductive and a second diode structure which is n-conductive. The first diode structure is formed as a layer which overlaps in places with the first contact point in a first overlap region. The second diode structure is formed as a layer which overlaps in places with the second contact point in a second overlap region. The first diode structure and the second diode structure overlap each other in a third overlap region.

First claim

The invention claimed is:

1. An electronic component, comprising:
a first contact point for n-side contacting,
a second contact point for p-side contacting,
a base body, and
a protective diode, which is connected antiparallel to the first contact point and to the second contact point, wherein
the protective diode comprises a first diode structure which is p-conductive,
the protective diode comprises a second diode structure which is n-conductive,
the first diode structure is formed as a layer which overlaps in places with the first contact point in a first overlap region,
the second diode structure is formed as a layer which overlaps in places with the second contact point in a second overlap region,
the first diode structure and the second diode structure overlap each other in a third overlap region, and
the first diode structure and the second diode structure are arranged on an outer surface of the base body and are in direct contact with the base body.

2. The electronic component according to claim 1 , wherein the first diode structure has a thickness of less than or equal to 1 μm and the second diode structure has a thickness of less than or equal to 1 μm.

3. The electronic component according to claim 1 , wherein the first diode structure and the second diode structure, each have the same base material, and wherein the base material is polycrystalline or amorphous.

4. The electronic component according to claim 1 , wherein the first diode structure and/or the second diode structure is produced by sputtering.

5. The electronic component according to claim 1 , wherein the first diode structure and/or the second diode structure is produced by vapor deposition and subsequent tempering.

6. The electronic component according to claim 1 , wherein the protective diode is generated at the first contact point and the second contact point.

7. The electronic component according to claim 1 , wherein the first diode structure and the second diode structure, each have the same base material, and wherein the base material comprises at least one of the following materials: semiconductor material, silicon, ZnO, ITO, and IZO.

8. The electronic component according to claim 1 , further comprising an optoelectronic semiconductor chip configured to generate or receive electromagnetic radiation, wherein the protective diode is permeable to an electromagnetic radiation.

9. The electronic component according to claim 1 , wherein
the first contact point and the first diode structure are in direct contact with one another in the first overlap region,
the second contact point and the second diode structure are in direct contact with one another in the second overlap region, and
the first diode structure and the second diode structure are in direct contact with one another in the third overlap region.

10. The electronic component according to claim 1 , wherein
the first overlap region has an area of at least 100 μm 2 ,
the second overlap region has an area of at least 100 μm 2 , and
the third overlap region has an area of at least 100 μm 2 .

11. The electronic component according to claim 1 , further comprising a first connection point in direct contact with the first contact point and the first diode structure, wherein the first diode structure is arranged in places between the first connection point and the first contact point.

12. The electronic component according to claim 11 , wherein the first connection point is galvanically generated on the first contact point and the first diode structure.

13. The electronic component according to claim 11 , further comprising a second connection point in direct contact with the second contact point and the second diode structure, wherein the second diode structure is disposed in places between the second connection point and the second contact point.

14. The electronic component according to claim 13 , wherein the second connection point is galvanically generated on the second contact point and the second diode structure.

15. The electronic component according to claim 1 , wherein the base body comprises at least one of the following materials or elements: metal, semiconductor, plastic, ceramic, and a semiconductor chip.

Assignees

• Osram Oled Gmbh

Inventors

• Tangring Ivar
• Schlereth Thomas

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H10D89/60 Primary

  Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] · CPC title

• H10F19/50

  Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components (H10F19/75 takes precedence) · CPC title

• H10H29/10

  Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title