Contact between interconnect and cell in solid oxide cell stacks

US11088372B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11088372-B2
Application numberUS-201716466946-A
CountryUS
Kind codeB2
Filing dateDec 1, 2017
Priority dateDec 16, 2016
Publication dateAug 10, 2021
Grant dateAug 10, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

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Improved contact between interconnect and oxygen electrode material in solid oxide cell (SOC) stacks is achieved through a contact point between the oxygen electrode or an oxygen-side contact layer of the SOC and a coated ferritic stainless steel interconnect in the SOC stack, where the coating on the metallic interconnect comprises Cu.

First claim

Opening claim text (preview).

The invention claimed is: 1. A contact point between a solid oxide cell and an interconnect of a solid oxide stack, said contact point comprising: a ferritic stainless steel interconnect substrate covered by a chromium oxide layer and at least one metallic layer comprising Co or Ni, the at least one metallic layer being coated by a coating comprising Cu having a thickness of approximately 100-200 nm, and an oxygen electrode or an oxygen-side contact layer of a solid oxide cell, wherein the Cu in the coating functions as a sintering aid towards the oxygen electrode or oxygen-side contact layer materials, and a fraction of the Cu in the coating diffuses into the oxygen electrode or oxygen-side contact layer of the solid oxide cell, thereby increasing the adhesion strength and lowering the electrical resistance of the contact point between the coated interconnect substrate and the oxygen electrode or oxygen-side contact layer of the solid oxide cell, such that the voltage drop across the contact point is less than 25 mV, when measured in air at 750° C., under a dc current density of 1.27 A/cm 2 , under a compressive load of 3 MPa. 2. A contact point according to claim 1 , wherein the coating on the metallic interconnect comprises an oxide of Cu and Fe, an oxide of Cu and Ni, an oxide of Cu and Cu, or an oxide of Cu, Co and Ni, or an oxide of Cu, Co, Ni and Fe. 3. A contact point according to claim 1 , wherein the oxygen electrode or oxygen-side contact layer material comprises a perovskite, a double perovskite, or a Ruddlesden-Popper phase material. 4. A contact point according to claim 1 , wherein the adhesion strength of the contact point is of the same order of magnitude as the adhesion strength between the electrolyte and the barrier layer of the solid oxide cell. 5. A contact point according to claim 1 , wherein the operating temperature of the solid oxide cell stack is between 500° C. and 900° C. 6. A method for creating a contact point between a coating on an interconnect and an oxygen electrode or oxygen-side contact layer of a solid oxide cell (SOC), comprising the steps of: providing a ferritic stainless steel interconnect substrate, depositing at least one layer of Co or Ni on an oxygen side of the interconnect; coating the layer of Co or Ni on the oxygen side of the interconnect with a coating comprising Cu having a thickness of approximately 100-200 nm, providing a solid oxide cell, and sintering the coated interconnect substrate and the solid oxide cell by heat treatment in air at a temperature exceeding 800° C., where the Cu in the coating functions as a sintering aid towards the oxygen electrode or oxygen-side contact layer materials, and a fraction of the Cu in the coating diffuses into the oxygen electrode or oxygen-side contact layer of the solid oxide cell, thereby increasing the adhesion strength and lowering the electrical resistance of the contact point between the coated interconnect substrate and the oxygen electrode or oxygen-side contact layer of the solid oxide cell, such that the voltage drop across the contact point is less than 25 mV, when measured in air at 750° C., under a dc current density of 1.27 A/cm 2 , under a compressive load of 3 MPa.

Assignees

Inventors

Classifications

  • Fuel cells with solid oxide electrolytes · CPC title

  • H01M8/0228Primary

    in the form of layered or coated products · CPC title

  • H01M8/021Primary

    Alloys based on iron · CPC title

  • Complex oxides, optionally doped, of the type AMO3, A being an alkaline earth metal or rare earth metal and M being a metal, e.g. perovskites · CPC title

  • Glass; Ceramic materials · CPC title

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What does patent US11088372B2 cover?
Improved contact between interconnect and oxygen electrode material in solid oxide cell (SOC) stacks is achieved through a contact point between the oxygen electrode or an oxygen-side contact layer of the SOC and a coated ferritic stainless steel interconnect in the SOC stack, where the coating on the metallic interconnect comprises Cu.
Who is the assignee on this patent?
Haldor Topsoe As
What technology area does this patent fall under?
Primary CPC classification H01M8/0228. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 10 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).