Capacitive and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch

Patent metadata

Field	Value
Publication number	US-11088322-B2
Application number	US-202016883850-A
Country	US
Kind code	B2
Filing date	May 26, 2020
Priority date	Aug 14, 2018
Publication date	Aug 10, 2021
Grant date	Aug 10, 2021

Abstract

A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, a capacitive RF terminal, and an ohmic RF terminal. The capacitive RF terminal can include a first trench metal liner situated on a first passive segment of the PCM, and a dielectric liner separating the first trench metal liner from a first trench metal plug. The ohmic RF terminal can include a second trench metal liner situated on a second passive segment of the PCM, and a second trench metal plug ohmically connected to the second trench metal liner. Alternatively, the capacitive RF terminal and the ohmic RF terminal can include lower metal portions and upper metal portions. A MIM capacitor can be formed by the upper metal portion of the capacitive RF terminal, an insulator, and a patterned top plate.

First claim

The invention claimed is:

1. A radio frequency (RF) switch comprising:
a phase-change material (PCM) and a heating element underlying an active segment of said PCM and extending outward and transverse to said PCM;
a first RF terminal comprising a first lower metal portion connected to a first upper metal portion;
a MIM capacitor formed by said first upper metal portion, an insulator, and a patterned top plate;
said first lower metal portion being ohmically connected to a first passive segment of said PCM;
a second RF terminal comprising a second lower metal portion connected to a second upper metal portion;
said second lower metal portion being ohmically connected to a second passive segment of said PCM.

2. The RF switch of claim 1 , wherein said patterned top plate is situated within an interlayer dielectric.

3. The RF switch of claim 1 , further comprising a first interconnect metal ohmically connected to said patterned top plate, and a second interconnect metal ohmically connected to said second upper metal portion.

4. A method for manufacturing a capacitive RF terminal and an ohmic RF terminal in a PCM RF switch, said method comprising:
forming a first lower metal portion for said capacitive RF terminal and a second lower metal portion for said ohmic RF terminal;
forming a metal layer on said first and second lower metal portions;
forming an insulator on said metal layer;
forming a top metal on said insulator,
etching said top metal so as to form a patterned top plate for said capacitive RF terminal;
etching said metal layer so as to form a first upper metal portion for said capacitive RF terminal and a second upper metal portion for said ohmic RF terminal, thereby forming a MIM capacitor by said first upper metal portion, said insulator, and said patterned top plate.

5. The method of claim 4 , wherein said patterned top plate is situated within an interlayer dielectric.

6. The method of claim 4 , further comprising forming a first interconnect metal ohmically connected to said patterned top plate, and a second interconnect metal ohmically connected to said second upper metal portion.

7. The method of claim 4 , wherein said first lower metal portion is ohmically connected to a first passive segment of a PCM, and said second lower metal portion is ohmically connected to a second passive segment of said PCM.

8. The RF switch of claim 1 , wherein said PCM is selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.

9. The RF switch of claim 1 , wherein said heating element comprises material selected from the group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), titanium nitride (TiN), titanium tungsten (TiW), tantalum (Ta), nickel chromium (NiCr), and nickel chromium silicon (NiCrSi).

10. The RF switch of claim 1 , further comprising a thermally conductive and electrically insulating layer situated between said heating element and said PCM.

11. The RF switch of claim 10 , wherein said thermally conductive and electrically insulating layer comprises material selected from the group consisting of comprise aluminum nitride (AlN), aluminum oxide (Al X O Y ), beryllium oxide (Be X O Y ), silicon carbide (SiC), diamond, and diamond-like carbon.

12. The method of claim 7 , wherein said PCM is selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.

13. The method of claim 7 , wherein said PCM RF switch comprises a heating element underlying an active segment of said PCM.

14. The method of claim 13 , wherein said heating element comprises material selected from the group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), titanium nitride (TiN), titanium tungsten (TiW), tantalum (Ta), nickel chromium (NiCr), and nickel chromium silicon (NiCrSi).

15. The method of claim 13 , further comprising a thermally conductive and electrically insulating layer situated between said heating element and said PCM.

16. A radio frequency (RF) switch comprising:
a phase-change material (PCM) and a heating element underlying an active segment of said PCM;
a first RF terminal capacitively coupled to a first passive segment of said PCM, said first RF terminal comprising an MIM capacitor;
a second RF terminal ohmically connected to a second passive segment of said PCM;
wherein said capacitively coupled first RF terminal and said ohmically connected second RF terminal are both situated on a same side of said PCM.

17. The RF switch of claim 16 , wherein said PCM is selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.

18. The RF switch of claim 16 , wherein said heating element comprises material selected from the group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), titanium nitride (TiN), titanium tungsten (TiW), tantalum (Ta), nickel chromium (NiCr), and nickel chromium silicon (NiCrSi).

19. The RF switch of claim 16 , further comprising a thermally conductive and electrically insulating layer situated between said heating element and said PCM.

20. The RF switch of claim 19 , wherein said thermally conductive and electrically insulating layer comprises material selected from the group consisting of comprise aluminum nitride (AlN), aluminum oxide (Al X O Y ), beryllium oxide (Be X O Y ), silicon carbide (SiC), diamond, and diamond-like carbon.

Assignees

• Newport Fab Llc

Inventors

• Slovin Gregory P
• El-Hinnawy Nabil
• Rose Jefferson E
• Howard David J

Classifications

• H10B63/10

  Phase change RAM [PCRAM, PRAM] devices · CPC title

• H10N79/00 Primary

  Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00 (ReRAM devices H10B63/00; PCRAM devices H10B63/10) · CPC title

• H01L45/144

  Electricity · mapped topic

• H01L45/1253 Primary

  Electricity · mapped topic

• H01L45/1226

  Electricity · mapped topic