Semiconductor device, method for manufacturing semiconductor device, and electronic device
US-10276671-B2 · Apr 30, 2019 · US
Semiconductor device and method for manufacturing same
US11088074B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11088074-B2 |
| Application number | US-201716472559-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 4, 2017 |
| Priority date | Apr 4, 2017 |
| Publication date | Aug 10, 2021 |
| Grant date | Aug 10, 2021 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A multi-finger transistor including plural control electrodes ( 2 ), plural first electrodes ( 3 ), and plural second electrodes ( 4 ) is provided on a semiconductor substrate ( 1 ). A resin film ( 14,15 ) covers the transistor. A first wiring ( 8 ) electrically connecting the plural first electrodes ( 3 ) to one other is provided on the resin film ( 14,15 ). The resin film ( 14,15 ) covers contact portions between the first wiring ( 8 ) and the plural first electrodes ( 3 ). A first hollow structure ( 16 ) sealed with the resin film ( 14,15 ) is provided around the plural control electrodes ( 2 ) and the plural second electrodes ( 4 ).
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a semiconductor substrate; a multi-finger transistor including plural control electrodes, plural first electrodes, and plural second electrodes provided on the semiconductor substrate; a first resin film formed on the semiconductor substrate; a second resin film covering the multi-finger transistor and contacting the first resin film; and a first wiring provided on the second resin film and electrically connecting the plural first electrodes to one other, wherein the first resin film covers part of contact portions between the first wiring and the plural first electrodes which is formed on a region of the multi-finger transistor, and a first hollow structure sealed with the second resin film is provided around the plural control electrodes and one of the plural second electrodes, wherein the second resin film defines an upper surface of the first hollow structure. 2. The semiconductor device according to claim 1 , further comprising a second wiring provided on the semiconductor substrate, covered with the second resin film, and electrically connecting the plural control electrodes to one other, wherein a second hollow structure sealed with the second resin film is provided at an intersection portion of the first wiring and the second wiring. 3. The semiconductor device according to claim 1 , wherein the first wiring is provided above the plural control electrodes and the plural second electrodes. 4. The semiconductor device according to claim 3 , further comprising a lower layer wiring covered with the second resin film, and an upper layer wiring provided on the second resin film, wherein a second hollow structure sealed with the second resin film is provided at an intersection portion of the lower layer wiring and the upper layer wiring. 5. The semiconductor device according to claim 4 , further comprising a support pole supporting the second resin film and provided inside the second hollow structure.
Assignees
Inventors
Classifications
comprising crossing interconnections · CPC title
Manufacture or treatment · CPC title
of air gaps · CPC title
Air gaps · CPC title
the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title
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Frequently asked questions
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- What does patent US11088074B2 cover?
- A multi-finger transistor including plural control electrodes ( 2 ), plural first electrodes ( 3 ), and plural second electrodes ( 4 ) is provided on a semiconductor substrate ( 1 ). A resin film ( 14,15 ) covers the transistor. A first wiring ( 8 ) electrically connecting the plural first electrodes ( 3 ) to one other is provided on the resin film ( 14,15 ). The resin film ( 14,15 ) covers con…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W20/495. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 10 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).