Apparatus, method and computer program for scrambling an identification signal using quantum dot-graphene field effect transistors

US11087018B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11087018-B2
Application numberUS-201716092732-A
CountryUS
Kind codeB2
Filing dateApr 27, 2017
Priority dateApr 28, 2016
Publication dateAug 10, 2021
Grant dateAug 10, 2021

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Abstract

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An apparatus, method and computer program wherein the apparatus comprises:a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide an individual drain-source bias voltage to each of a plurality of quantum dot-graphene field effect transistors, wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from each of a plurality of quantum dot-graphene field effect transistors where the output signal is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus.

First claim

Opening claim text (preview).

We claim: 1. An apparatus comprising: a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. 2. An apparatus as claimed in claim 1 wherein the different parameter of the different drain-source bias voltages are selected from; different amplitudes, different pulse durations. 3. An apparatus as claimed in claim 1 comprising at least one light emitting diode. 4. An apparatus as claimed in claim 1 comprising a plurality of light emitting diodes where different light emitting diodes are configured to provide at least one of; different wavelengths of light, different power outputs. 5. An apparatus as claimed in claim 1 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been reflected by a part of a user. 6. An apparatus as claimed in claim 1 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been transmitted through a part of a user. 7. An apparatus as claimed in claim 1 comprising at least one transmitter configured to enable the scrambled identification signal to be transmitted to another device. 8. An apparatus as claimed in claim 1 comprising at least one transmitter configured to enable the apparatus to receive a control signal from another device such that in response to the received control signal the apparatus obtains output signals from the plurality of quantum dot-graphene field effect transistors. 9. An apparatus as claimed in claim 1 wherein the plurality of quantum-dot field effect transistors are provided in at least one of; a linear array, a pseudo linear array. 10. An apparatus as claimed in claim 1 wherein the plurality of quantum dot-graphene field effect transistors are provided on a flexible substrate. 11. An apparatus as claimed in claim 1 wherein the quantum dots comprise colloidal quantum dots. 12. An apparatus as claimed in claim 1 wherein the apparatus is arranged to detect light with a wavelength between 500 nm and 2000 nm. 13. An apparatus as claimed in claim 1 wherein the apparatus is configured to be worn by a user. 14. An identification device comprising an apparatus, said apparatus comprising: a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. 15. A method comprising: providing a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; obtaining output signals from the plurality of quantum dot-graphene field effect transistors, where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor; and using the obtained output signals as a scrambled identification signal of the user of the apparatus. 16. A method as claimed in claim 15 , wherein the different parameter of the different drain-source bias voltages are selected from: different amplitudes, different pulse durations. 17. A method as claimed in claim 15 wherein the apparatus comprises at least one light emitting diode. 18. A method as claimed in claim 15 wherein the apparatus comprises a plurality of light emitting diodes where different light emitting diodes are configured to provide at least one of: different wavelengths of light, or different power outputs. 19. A method as claimed in claim 15 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been reflected by a part of a user. 20. A method as claimed in claim 15 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been transmitted through a part of a user.

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Classifications

  • Package configurations · CPC title

  • Protecting personal data, e.g. for financial or medical purposes · CPC title

  • Aspects of pattern recognition specially adapted for signal processing · CPC title

  • the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title

  • using biometric data, e.g. fingerprints, iris scans or voiceprints · CPC title

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What does patent US11087018B2 cover?
An apparatus, method and computer program wherein the apparatus comprises:a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide an individual drain-source bias voltage to each of a plurality of quantum dot-graphene field effect transistors, wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantu…
Who is the assignee on this patent?
Nokia Technologies Oy
What technology area does this patent fall under?
Primary CPC classification G06F21/6245. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 10 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).