Method and apparatus for source mask optimization configured to increase scanner throughput for a patterning process

Patent metadata

Field	Value
Publication number	US-11086230-B2
Application number	US-202016777941-A
Country	US
Kind code	B2
Filing date	Jan 31, 2020
Priority date	Feb 1, 2019
Publication date	Aug 10, 2021
Grant date	Aug 10, 2021

Abstract

A method for optimization to increase lithographic apparatus throughput for a patterning process is described. The method includes providing a baseline dose for an EUV illumination and an initial pupil configuration, associated with a lithographic apparatus. The baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest. The method includes biasing the dose anchor mask pattern relative to the dose anchor target pattern; determining an acceptable lower dose for the biased dose anchor mask pattern and the initial pupil configuration; unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and determining a changed pupil configuration and a mask bias for the device patterns of interest based on the acceptable lower dose and the unbiased dose anchor mask pattern.

First claim

What is claimed is:

1. A method for configuring an extreme ultra violet (EUV) lithographic apparatus, the method comprising:
providing a baseline dose for an EUV illumination and an initial pupil configuration, wherein the baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest;
biasing the dose anchor mask pattern relative to the dose anchor target pattern;
determining a dose lower than the baseline dose, for the biased dose anchor mask pattern and the initial pupil configuration;
unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and
determining a changed pupil configuration and a mask bias for the device patterns of interest based on the lower dose, or a higher dose than the lower dose, and the unbiased dose anchor mask pattern.

2. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:
obtain a baseline dose for an illumination and an initial pupil configuration, wherein the baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest;
bias the dose anchor mask pattern relative to the dose anchor target pattern;
determine a dose lower than the baseline dose, for the biased dose anchor mask pattern and the initial pupil configuration;
unbias the dose anchor mask pattern relative to the dose anchor target pattern; and
determine a changed pupil configuration and a mask bias for the device patterns of interest based on the lower dose, or a higher dose than the lower dose, and the unbiased dose anchor mask pattern implement the method of claim 1 .

3. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to bias the dose anchor mask pattern relative to the dose anchor target pattern are further configured to cause the computer system to dimensional shift the dose anchor mask pattern relative to the dose anchor target pattern in one or more dimensions.

4. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to bias the dose anchor mask pattern relative to the dose anchor target pattern are further configured to cause the computer system to dimensionally shift one or more edges of one or more features of the dose anchor mask pattern.

5. The computer program product of claim 4 , wherein the one or more features of the dose anchor mask pattern are one dimensional or two dimensional.

6. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to bias the dose anchor mask pattern relative to the dose anchor target pattern are further configured to cause the computer system to bias the dose anchor mask pattern relative to the dose anchor target pattern asymmetrically.

7. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to bias the dose anchor mask pattern relative to the dose anchor target pattern are further configured to cause the computer system to enlarge one or more device patterns and provide a corresponding mask bias of the device patterns of interest.

8. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to determine the lower dose for the biased dose anchor mask pattern and the initial pupil configuration are further configured to cause the computer system to do so using a dose and focus optimization.

9. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to obtain the baseline dose and the initial pupil configuration are further configured to cause the computer system to:
optimize a freeform or parametric pupil and the dose anchor mask pattern;
optimize a continuous transmission mask (CTM) and extracting main and assist features;
optimize pupil and polygon masks at different dose levels;
map a discrete pupil;
perform a dose and focus optimization;
determine the baseline dose and the initial pupil configuration based on the dose and focus optimization; and
provide the baseline dose for the illumination and the initial pupil configuration.

10. The computer program product of claim 2 , wherein the instructions are further configured to cause the computer system to, after determination of the changed pupil configuration:
normalize an intensity of the illumination to optimize a free form illumination mask co-optimization with a fixed dose and a fixed illumination intensity set at the lower dose, or a dose higher than the lower dose, with a pupil telecentricity penalty;
map a continuous pupil produced by the changed pupil configuration to a discrete pupil;
perform a dose and focus optimization using a dose anchor feature and a focus anchor feature, simultaneously or sequentially;
perform a mask only optimization of device patterns of interest with the discrete pupil;
optimize dose based on a difference between Abbe and Hopkins model outputs; and
optimize the mask bias for device patterns of interest through a slit using the optimized dose, or a dose higher than the optimized dose.

11. The computer program product of claim 2 , wherein the instructions are further configured to cause the computer system to, after determination of the changed pupil configuration:
perform a discrete mirror state optimization at the lower dose, or a dose higher than the lower dose;
optimize dose based on a difference between Abbe and Hopkins model outputs; and
optimize the mask bias for device patterns of interest through a slit using the optimized dose, or a dose higher than the optimized dose.

12. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to obtain the baseline dose and the initial pupil configuration, bias the dose anchor mask pattern, determine the lower dose, unbias the dose anchor mask pattern, and determine the changed pupil configuration and the mask bias are configured to do so using an aerial image model.

13. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to obtain the baseline dose and the initial pupil configuration, bias the dose anchor mask pattern, determine the lower dose, unbias the dose anchor mask pattern, and determine the changed pupil configuration and the mask bias are configured to do so for a resist image model.

14. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to obtain the baseline dose and the initial pupil configuration, bias the dose anchor mask pattern, determine the lower dose, unbias the dose anchor mask pattern, and determine the changed pupil configuration and the mask bias are configured to do so at any numerical aperture and/or wavelength.

15. The computer program product of claim 2 , wherein the instructions configured to cause the computer system to obtain the baseline dose and the initial pupil configuration, bias the dose anchor mask pattern, determine the lower dose, unbias the dose anchor mask pattern, and determine the changed pupil configuration and the mask bias are configured to do so as part of a memory chip, logic chip, and/or microprocesso

Assignees

• Asml Netherlands Bv

Inventors

• Hsu Duan-Fu Stephen
• Liu Jingjing

Classifications

• G03F7/70625

  Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title

• G03F7/70066

  Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds · CPC title

• G03F7/70441

  Optical proximity correction [OPC] · CPC title

• G03F7/70558 Primary

  Dose control, i.e. achievement of a desired dose · CPC title

• G03F7/705 Primary

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title