Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber

Patent metadata

Field	Value
Publication number	US-11085126-B2
Application number	US-201916682624-A
Country	US
Kind code	B2
Filing date	Nov 13, 2019
Priority date	Aug 20, 2015
Publication date	Aug 10, 2021
Grant date	Aug 10, 2021

Abstract

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

First claim

What is claimed is:

1. A polysilicon feed system comprising:
a chunk tray for feeding chunk polysilicon having a size between 3 mm and 45 mm in a largest dimension, the chunk tray comprising:
first and second sides, the first and second sides each having a lower end, the first and second sides being spaced from each other at their lower ends; and
a flat bottom that adjoins the first and second sides; and

a magnetic pulse vibrator for controlling the flow of polysilicon from the chunk tray to a growth chamber for growing a crystal ingot from a melt, the magnetic pulse vibrator being disposed below the chunk tray, the magnetic pulse vibrator comprising:
an electromagnetic energy source that vibrates the chunk tray through the emission of electromagnetic energy; and
a controller that controls a feed rate of the chunk tray through control of the voltage supplied to the electromagnetic energy source.

2. The polysilicon feed system as set forth in claim 1 comprising a polysilicon feeder for supplying polysilicon to the growth chamber.

3. The polysilicon feed system as set forth in claim 2 wherein the polysilicon feeder comprises support rails for receiving the chunk tray.

4. The polysilicon feed system as set forth in claim 3 wherein the chunk tray comprises:
an exterior portion that includes an exterior channel that removably receives the support rail of the polysilicon feeder; and
an interior profile that receives chunk polysilicon from a feed material reservoir of the polysilicon feeder.

5. The polysilicon feed system as set forth in claim 1 wherein each of the first and second sides is angled downward toward the bottom.

6. The polysilicon feed system as set forth in claim 5 wherein the each of the first and second sides extends downward from one or more vertical walls of the chunk tray.

7. The polysilicon feed system as set forth in claim 1 wherein the chunk tray comprises a bowl that adjoins the first and second sides.

8. The polysilicon feed system as set forth in claim 7 comprising a polysilicon feeder for supplying polysilicon to the growth chamber, the polysilicon feeder comprising a hopper having an outlet, the bowl being disposed below the outlet.

Assignees

• Globalwafers Co Ltd
• Daevac Int Co Ltd

Inventors

• Yun Seok Min
• Park Seong Su
• Ji Jun Hwan
• Choi Won-Jin
• Jung Uisung
• Lee Young Jung
• Koo Tae Su
• Kim Sung-Jin

Classifications

• C30B15/00 Primary

  Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) · CPC title

• C30B29/06

  Silicon · CPC title

• G01P15/18

  in two or more dimensions · CPC title

• C30B15/32

  Seed holders, e.g. chucks · CPC title

• C30B35/005

  Transport systems · CPC title