Annealing method and nitrogen-doped metal oxide structure

Patent metadata

Field	Value
Publication number	US-11084011-B2
Application number	US-201816205514-A
Country	US
Kind code	B2
Filing date	Nov 30, 2018
Priority date	May 31, 2016
Publication date	Aug 10, 2021
Grant date	Aug 10, 2021

Abstract

An annealing method is provided. The annealing method includes preparing a metal oxide structure, annealing the metal oxide structure in a gas atmosphere including nitrogen to fabricate a metal compound structure, an oxygen content of which is lower than that of the metal oxide structure, from the metal oxide structure, and annealing the metal compound structure in a gas atmosphere including oxygen to fabricate a nitrogen-doped metal oxide structure, which has a specific surface area greater than that of the metal oxide structure, from the metal compound structure.

First claim

What is claimed is:

1. An annealing method comprising:
preparing a metal oxide structure;
first annealing, at a first annealing temperature, the metal oxide structure in a gas atmosphere including nitrogen to fabricate a metal compound structure, an oxygen content of which is lower than that of the metal oxide structure, from the metal oxide structure; and
second annealing, at a second annealing temperature, the metal compound structure in a gas atmosphere including oxygen to fabricate a nitrogen-doped metal oxide structure, which has a specific surface area greater than that of the metal oxide structure, from the metal compound structure,
wherein a metal element in the metal oxide is a metal of Group 9 of the periodic table, and the first annealing temperature is lower than the second annealing temperature.

2. The annealing method of claim 1 , wherein a grain size of the nitrogen-doped metal oxide structure is less than a grain size of the metal oxide structure.

3. The annealing method of claim 2 , wherein a grain size of the metal compound structure is less than the grain size of the metal oxide structure, and
wherein a specific surface area of the metal compound structure is greater than the specific surface area of the metal oxide structure.

4. The annealing method of claim 3 , wherein the grain size of the nitrogen-doped metal oxide structure is less than the grain size of the metal compound structure; and
wherein the specific surface area of the nitrogen-doped metal oxide structure is less than the specific surface area of the metal compound structure.

5. The annealing method of claim 1 , wherein the nitrogen-doped metal oxide structure is a porous structure.

6. The annealing method of claim 1 , wherein the metal oxide structure is annealed for a first time, and
wherein the metal compound structure is annealed for a second time shorter than the first time.

7. An annealing method comprising:
preparing a metal oxide structure;
annealing the metal oxide structure in a gas atmosphere including nitrogen to fabricate a metal compound structure, an oxygen content of which is lower than that of the metal oxide structure, from the metal oxide structure; and
annealing the metal compound structure in a gas atmosphere including oxygen to fabricate a nitrogen-doped metal oxide structure, which has a specific surface area greater than that of the metal oxide structure, from the metal compound structure, wherein the metal oxide structure includes cobalt, and
wherein the metal compound structure includes cobalt monoxide.

Assignees

• Iucf Hyu Erica Campus

Inventors

• Bang Jin Ho
• Lee Sang Uck
• Lee Lanlee
• Han Suyoung
• Kang Byung Wuk
• Kim Heeeun

Classifications

• H01M10/052

  Li-accumulators · CPC title

• C01P2004/03

  obtained by SEM · CPC title

• C01P2002/72

  by d-values or two theta-values, e.g. as X-ray diagram · CPC title

• C01G55/004

  Oxides; Hydroxides · CPC title

• C01G51/04

  Oxides · CPC title