Method for producing a CdTe solar cell

US11081616B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11081616-B2
Application numberUS-201916422008-A
CountryUS
Kind codeB2
Filing dateMay 24, 2019
Priority dateJun 4, 2018
Publication dateAug 3, 2021
Grant dateAug 3, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for producing a CdTe solar cell is provided, wherein at least the following layers are deposited on a glass substrate within a vacuum chamber: a TCO layer acting as a frontal contact; at least one CdTe layer; a thin layer of a chlorine-containing compound, and an electrically conductive layer acting as a return contact. Here, a maximally 20 nm thick passivation layer made from CdS, in which chemically non-bound oxygen is embedded, is deposited on the TCO layer prior to deposition of at least one CdTe-layer.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing a CdTe solar cell, the method comprising: depositing at least the following layers on a glass substrate: a TCO layer acting as a front contact; at least one CdTe layer; a thin layer of a chlorine-containing compound; and an electrically conductive layer acting as back contact, wherein before the deposition of the at least one CdTe layer, a passivation layer with a maximum thickness of 20 nm is deposited by sublimation of CdS, wherein the CdS used for depositing the passivation layer is thermally heated until it sublimates, and the passivation layer is deposited in the presence of an oxygen plasma, the passivation layer comprising CdS in which chemically non-bound oxygen is embedded. 2. The method of claim 1 , wherein the oxygen plasma is generated by means of a glow discharge or arc discharge.

Assignees

Inventors

Classifications

  • the films including Group II-VI materials, e.g. CdTe or CdS · CPC title

  • comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe · CPC title

  • comprising growth substrates not made of Group II-VI materials · CPC title

  • The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe · CPC title

  • Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

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What does patent US11081616B2 cover?
A method for producing a CdTe solar cell is provided, wherein at least the following layers are deposited on a glass substrate within a vacuum chamber: a TCO layer acting as a frontal contact; at least one CdTe layer; a thin layer of a chlorine-containing compound, and an electrically conductive layer acting as a return contact. Here, a maximally 20 nm thick passivation layer made from CdS, in …
Who is the assignee on this patent?
Fraunhofer Ges Forschung
What technology area does this patent fall under?
Primary CPC classification H10F77/1696. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 03 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).