Photosensor including photoelectric conversion layer containing perovskite compound, and optical detection device including the same

Patent metadata

Field	Value
Publication number	US-11081291-B2
Application number	US-201816035593-A
Country	US
Kind code	B2
Filing date	Jul 14, 2018
Priority date	Jul 20, 2017
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

A photosensor includes a first electrode, a second electrode that opposes the first electrode, and a photoelectric conversion layer that is disposed between the first electrode and the second electrode and converts incident light into electric charges. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The photoelectric conversion layer contains a perovskite compound. The fluorescence spectrum of the perovskite compound has a first peak at a first wavelength and a second peak at a second wavelength that is longer than the first wavelength. The photoelectric conversion layer is in ohmic contact with each of the first electrode and the second electrode.

First claim

What is claimed is:

1. A photosensor comprising:
a first electrode;
a second electrode that opposes the first electrode; and
a photoelectric conversion layer that is disposed between the first electrode and the second electrode and converts incident light into electric charges, wherein:
at least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive,
the photoelectric conversion layer contains a perovskite compound,
a fluorescence spectrum of the perovskite compound has a first peak and a second peak,
the perovskite compound has a first band gap corresponding to the first peak and a second band gap corresponding to the second peak, and
the photoelectric conversion layer is in ohmic contact with each of the first electrode and the second electrode.

2. The photosensor according to claim 1 , wherein:
a difference between a value of a work function of the first electrode and a value of a work function of the second electrode is 0.5 eV or less.

3. The photosensor according to claim 1 , wherein:
a value of a work function of the first electrode or the second electrode is located between a conduction band bottom of the first band gap and a conduction band bottom of the second band gap or between a valence band top of the first band gap and a valence band top of the second band gap.

4. The photosensor according to claim 1 , wherein:
the second peak is located between a wavelength of the first peak and a wavelength having an lower energy than the wavelength of the first peak by 0.05 eV.

5. The photosensor according to claim 1 , wherein:
the first peak is located in a wavelength range of 800 nm or more and 840 nm or less and the second peak is located in a wavelength range of 850 nm or more and 910 nm or less.

6. An optical detection device comprising:
a photosensor; and
a detector electrically connected to the photosensor, wherein:
the photosensor includes:
a first electrode;
a second electrode that opposes the first electrode; and
a photoelectric conversion layer that is disposed between the first electrode and the second electrode and converts incident light into electric charges,

at least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive,
the photoelectric conversion layer contains a perovskite compound,
a fluorescence spectrum of the perovskite compound has a first peak and a second peak,
the perovskite compound has a first band gap corresponding to the first peak and a second band gap corresponding to the second peak, and
the photoelectric conversion layer is in ohmic contact with each of the first electrode and the second electrode.

7. The optical detection device according to claim 6 , further comprising:
a diode electrically connected to the photosensor.

8. The optical detection device according to claim 6 , wherein:
the charge accumulator is configured to accumulate positive charges and negative charges.

9. The optical detection device according to claim 6 , further comprising:
a charge accumulator electrically connected to the photosensor.

10. The optical detection device according to claim 6 , further comprising:
a power supply electrically connected to the photosensor.

11. The optical detection device according to claim 6 , wherein:
the second peak is located between a wavelength of the first peak and a wavelength having an lower energy than the wavelength of the first peak by 0.05 eV.

12. The optical detection device according to claim 6 , wherein:
the first peak is located in a wavelength range of 800 nm or more and 840 nm or less and the second peak is located in a wavelength range of 850 nm or more and 910 nm or less.

13. A light-absorbing material comprising:
a perovskite compound represented by composition formula AMX 3 , where A is a monovalent cation, M is a divalent cation, and X is a monovalent anion, wherein:
the M includes Sn 2+ , and
a fluorescence spectrum of the light-absorbing material has a first peak and a second peak, and
the perovskite compound has a first band gap corresponding to the first peak and a second band gap corresponding to the second peak.

14. The light-absorbing material according to claim 13 , wherein:
the A includes a formamidinium cation.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Suzuka Michio
• Uchida Ryuusuke
• Matsui Taisuke

Classifications

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H01G9/2009 Primary

  Solid electrolytes · CPC title

• H10K30/451 Primary

  comprising a metal-semiconductor-metal [m-s-m] structure · CPC title

• H10F19/50 Primary

  Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components (H10F19/75 takes precedence) · CPC title

• Y02E10/542

  Dye sensitized solar cells · CPC title