Determining the amount of a predetermined type of radiation irradiated on a sensor material

Patent metadata

Field	Value
Publication number	US-11079498-B2
Application number	US-201816761952-A
Country	US
Kind code	B2
Filing date	Oct 17, 2018
Priority date	Nov 7, 2017
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

The application relates to determining the amount of a predetermined type of radiation irradiated on a sensor material by: a) providing a sensor material; b) exposing the sensor material to the predetermined type of radiation for retaining the predetermined type of radiation in the sensor material for a predetermined period of time; c) subjecting the sensor material, which has been exposed to the predetermined type of radiation, to heat treatment and/or to optical stimulation; and d) determining the amount of visible light emitted by the sensor material as a result of being subjected to the heat treatment and/or to the optical stimulation; wherein the sensor material is represented by the following formula (I).

First claim

The invention claimed is:

1. A method for determining an amount of a predetermined type of radiation irradiated on a sensor material, wherein the method comprises:
a) providing a sensor material;
b) exposing the sensor material to the predetermined type of radiation for retaining the predetermined type of radiation in the sensor material for a predetermined period of time;
c) subjecting the sensor material, which has been exposed to the predetermined type of radiation, to heat treatment and/or to optical stimulation; and
d) determining an amount of visible light emitted by the sensor material as a result of being subjected to the heat treatment and/or to the optical stimulation;
wherein the sensor material is represented by the following formula (I)
(M′) 8 (M″M″′) 6 O 24 (X,X′) 2 :M″″  formula (I)

wherein
M′ represents a monoatomic cation of an alkali metal selected from Group 1 of the IUPAC periodic table of the elements, or any combination of such cations;
M″ represents a trivalent monoatomic cation of an element selected from Group 13 of the IUPAC periodic table of the elements, or of a transition element selected from any of Groups 3-12 of the IUPAC periodic table of the elements, or any combination of such cations;
M′″ represents a monoatomic cation of an element selected from Group 14 of the IUPAC periodic table of the elements, or of an element selected from any of Groups 13 and 15 of the IUPAC periodic table of the elements, or of Zn, or any combination of such cations;
X represents an anion of an element selected from Group 17 of the IUPAC periodic table of the elements, or any combination of such anions, or wherein X is absent;
X′ represents an anion of an element selected from Group 16 of the IUPAC periodic table of the elements, or any combination of such anions, or wherein X′ is absent; and
M″″ represents a dopant cation of an element selected from transition metals of the IUPAC periodic table of the elements, or any combination of such cations, or wherein M″″ is absent;
with the proviso that at least one of X and X′ is present.

2. The method of claim 1 , wherein the predetermined type of radiation is electromagnetic radiation having a wavelength of above 0 nm to 590 nm.

3. The method of claim 1 , wherein the heat treatment comprises increasing the temperature of the sensor material.

4. The method of claim 1 , wherein the optical stimulation of the sensor material comprises subjecting the sensor material to electromagnetic radiation having a wavelength of 310-1400 nm.

5. The method of claim 1 , wherein the method comprises e) comparing the determined amount of light emitted by the sensor material with a reference indicating the correlation of the amount of emitted visible light with the amount of the predetermined type of radiation that the sensor material has been exposed to.

6. The method of claim 1 , wherein M′ represents a monoatomic cation of an alkali metal selected from Group 1 of the IUPAC periodic table of the elements, or any combination of such cations, with the proviso that M′ does not represent the monoatomic cation of Na alone.

7. The method of claim 1 , wherein M′ represents a combination of at least two monoatomic cations of different alkali metals selected from Group 1 of the IUPAC periodic table of the elements.

8. The method of claim 1 , wherein M′ represents a combination of at least two monoatomic cations of different alkali metals selected from a group consisting of Li, Na, K, and Rb.

9. The method of claim 1 , wherein M′ represents a monoatomic cation of an alkali metal selected from a group consisting of Li, K, and Rb, or any combination of such cations.

10. The method of claim 1 , wherein M′ represents a combination of a monoatomic cation of Na with a monoatomic cation of Li, a monoatomic cation of K and/or a monoatomic cation of Rb.

11. The method of claim 1 , wherein M″ represents a trivalent monoatomic cation of a metal selected from a group consisting of Al and Ga, or a combination of such cations.

12. The method of claim 1 , wherein M″ represents a trivalent monoatomic cation of B.

13. The method of claim 1 , wherein M′″ represents a monoatomic cation of an element selected from a group consisting of Si and Ge, or a combination of such cations.

14. The method of claim 1 , wherein M′″ represents a monoatomic cation of an element selected from a group consisting of Al, Ga, N, P, and As, or any combination of such cations.

15. The method of claim 1 , wherein X represents an anion of an element selected from a group consisting of F, Cl, Br, and I, or any combination of such anions.

16. The method of claim 1 , wherein X′ represents an anion of an element selected from a group consisting of O, S, Se, and Te, or any combination of such anions.

17. The method of claim 1 , wherein M″″ represents a cation of an element selected from a group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn, or any combination of such cations.

18. A detecting device for determining an amount of a predetermined type of radiation irradiated on a sensor material, wherein the detecting device comprises:
a sensor material represented by the following formula (I)
(M′) 8 (M″M′″) 6 O 24 (X,X′) 2 :M″″  formula (I)

wherein
M′ represents a monoatomic cation of an alkali metal selected from Group 1 of the IUPAC periodic table of the elements, or any combination of such cations;
M″ represents a trivalent monoatomic cation of an element selected from Group 13 of the IUPAC periodic table of the elements, or of a transition element selected from any of Groups 3-12 of the IUPAC periodic table of the elements, or any combination of such cations;
M′″ represents a monoatomic cation of an element selected from Group 14 of the IUPAC periodic table of the elements, or of an element selected from any of Groups 13 and 15 of the IUPAC periodic table of the elements, or of Zn, or any combination of such cations;
X represents an anion of an element selected from Group 17 of the IUPAC periodic table of the elements, or any combination of such anions, or wherein X is absent;
X′ represents an anion of an element selected from Group 16 of the IUPAC periodic table of the elements, or any combination of such anions, or wherein X′ is absent; and
M″″ represents a dopant cation of an element selected from transition metals of the IUPAC periodic table of the elements, or any combination of such cations, or wherein M″″ is absent;
with the proviso that at least one of X and X′ is present;
a heating unit configured to subject the sensor material, having been exposed to the predetermined type of radiation, to a heat treatment, and/or a stimulation unit configured to subject the sensor material, having been exposed to the predetermined type of radiation, to optical stimulation; and
a measuring unit configured to measure the amount of light emitted by the sensor material as a result of being subjected to the heat treatment and/or to the optical stimulation.

19. The detecting device of claim 18 , wherein the heating unit is configured to increase the temperature of the sensor material.

20. The detecting device of claim 18 , wherein the stimulation unit is configured to subject the sensor material to electromagnetic radiation having a wavelength of 310-1400 nm.

21. The detecting device of claim 18 , wherein the stimulation unit is a laser, a light emitting diode (LED), an organic light-emitting diode (OLED), an active-matrix organic light emitting diode (AMOLED), an incandescen

Assignees

• Turun Yliopisto

Inventors

• Lastusaari Mika
• Norrbo Isabella

Classifications

• C09K9/00

  Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy · CPC title

• G01T1/11 Primary

  Thermo-luminescent dosimeters {(thermo-luminescent compositions C09K11/00)} · CPC title

• C01B33/26 Primary

  Aluminium-containing silicates {, i.e. silico-aluminates} · CPC title

• C01B33/32

  Alkali metal silicates ({C01B33/24} , C01B33/26 take precedence) · CPC title

• C09K11/676

  Aluminates; Silicates · CPC title