Radiative cooling substrate and manufacturing method of the same

US11078593B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11078593-B2
Application numberUS-201916282747-A
CountryUS
Kind codeB2
Filing dateFeb 22, 2019
Priority dateOct 31, 2018
Publication dateAug 3, 2021
Grant dateAug 3, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

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A radiative cooling substrate and a manufacturing method of the radiative cooling substrate are provided. The radiative cooling substrate includes a metallic substrate and a chitosan layer disposed on the metallic substrate with a thickness of 0.5 μm to 10 μm. The chitosan layer emits radiation within a waveband between 8 μm and 13 μm.

First claim

Opening claim text (preview).

What is claimed is: 1. A manufacturing method of a radiative cooling substrate, comprising: forming a metallic substrate by depositing an adhesive layer with a second thickness on a silicon substrate and depositing a metal layer on the adhesive layer in an evaporation process, wherein the adhesive layer comprises chromium or titanium, and the second thickness is 10 nm to 50 nm; preparing a chitosan solution, the chitosan solution comprising chitosan and a solvent, wherein the solvent comprises water, C1-C4 alcohols, and an acid, and a pH-value of the chitosan solution is less than seven; providing the metallic substrate into an electrophoresis cell loaded with the chitosan solution; applying a voltage to the metallic substrate for a predetermined time period; depositing a chitosan layer comprising the chitosan with a first thickness on the metallic substrate in an electrophoretic process; and obtaining the radiative cooling substrate; wherein the first thickness is a value from 0.5 μm to 10 μm. 2. The method of claim 1 , wherein a ratio of a weight of the chitosan and a volume of the solvent is 0.01 g: 1000 mL to 20 g: 1000 mL. 3. The method of claim 1 , wherein the C1-C4 alcohols comprise ethyl alcohol, and a volume ratio of the water and the ethyl alcohol is less than 2:8. 4. The method of claim 1 , wherein the acid comprises acetic acid or hydrochloric acid. 5. The method of claim 1 , wherein the voltage is less than 30 V. 6. The method of claim 1 , wherein the predetermined time period is less than five minutes.

Assignees

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Classifications

  • characterised by the article coated · CPC title

  • C25D13/06Primary

    with polymers {(not used, see C09D5/44)} · CPC title

  • Pretreatment · CPC title

  • by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing · CPC title

  • Servicing or operating {apparatus or multistep processes} · CPC title

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What does patent US11078593B2 cover?
A radiative cooling substrate and a manufacturing method of the radiative cooling substrate are provided. The radiative cooling substrate includes a metallic substrate and a chitosan layer disposed on the metallic substrate with a thickness of 0.5 μm to 10 μm. The chitosan layer emits radiation within a waveband between 8 μm and 13 μm.
Who is the assignee on this patent?
Univ Nat Tsing Hua
What technology area does this patent fall under?
Primary CPC classification C25D13/06. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 03 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).