Methods utilizing active quantum chemistry
US-2024317612-A1 · Sep 26, 2024 · US
US11078579B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11078579-B2 |
| Application number | US-202016799220-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 24, 2020 |
| Priority date | Sep 26, 2012 |
| Publication date | Aug 3, 2021 |
| Grant date | Aug 3, 2021 |
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The invention relates to a component (8) comprising a substrate made of chromia-former metal alloy (82), the basic element of which is iron (Fe) or nickel (Ni), wherein the substrate has two main planar faces. According to the invention: one of the main planar faces is coated with a coating comprising a thick layer of ceramic (80), grooved to delimit channels (800) suitable for the distribution and/or collection of gases, such as H2O water vapour, H2 or air, and/or one of the main planar faces is coated with a thick metal layer (81), grooved to delimit channels (810) suitable for the distribution and/or collection of gases, such as H2O water vapour, H2, O2 or draining gas. The invention also relates to the associated production processes.
Opening claim text (preview).
The invention claimed is: 1. A process for preparing a fuel cell (SOFC) or a high-temperature electrolyzer (HTE), comprising the following steps: a/ preparing a substrate made of metal alloy, of chromia-forming type, the base element of which is iron (Fe) or nickel (Ni), the substrate having two main flat faces; b/ coating one of the flat faces of the substrate with a thick ceramic layer in a green state and coating the other flat face of the substrate with a thick metallic layer in a green state; c/ grooving the thick ceramic layer and the thick metallic layer so as to delimit channels that are suitable for distributing and/or collecting gases; and d/ forming a stack of elementary electrolysis cells each formed from a cathode, an anode and an electrolyte intercalated between the cathode and the anode; wherein: to prepare an HTE reactor, the thick grooved ceramic layer in a green state is in contact with the anode of one of two adjacent elementary cells, and the thick grooved metallic layer in a green state is in contact with the cathode of the other of the two adjacent elementary cells; or to prepare an SOFC, the thick grooved ceramic layer in a green state is in contact with the cathode of one of two adjacent elementary cells, and the thick grooved metallic layer in a green state is in contact with the anode of the other of the two adjacent elementary cells; e/ applying a compression force to the stack of elementary electrolysis cells to form the HTE reactor or SOFC, wherein the compression force causes one or more ceramic layer and/or metallic layer to be deformed such that any imperfections between the elementary electrolysis cells in the stack are compensated for by the deformation of the layer; and f/ obtaining an HTE reactor or SOFC. 2. The process as claimed in claim 1 , in which, prior to step b, the thick ceramic or metallic layer is obtained by tape casting, step b comprising hot-bonding or hot-pressing or chemical bonding of the strip to one or other of the faces of the substrate. 3. The process as claimed in claim 2 , step b comprising hot-pressing or hot-bonding of the green ceramic strip at a temperature of between 60 and 130° C. 4. The process as claimed in claim 1 , wherein step b comprises screen printing in thick layers of a ceramic or metallic paste onto one or other of the faces of the substrate. 5. The process as claimed in claim 1 , wherein step c comprises calendaring a green ceramic strip obtained by tape casting between two rolls heated to the softening point of the polymers of the ceramic strip, at least one of the two rolls comprising ribs corresponding to the channels to be delimited. 6. The process as claimed in claim 1 , wherein step c is performed by laser ablation once step b has been completed. 7. The process as claimed in claim 6 , wherein step c is performed using a CO 2 laser. 8. The process as claimed in claim 6 , wherein step c is completed after several passes of the laser over the thick layer. 9. The process as claimed in claim 1 , wherein the thick ceramic layer comprises a lanthanum manganite of formula La 1-x Sr x MO 3 with M (transition metals)=Ni, Fe, Co, Mn, Cr, alone or as a mixture, or materials of lamellar structure such as lanthanide nickelates of formula Ln 2 NiO 4 (Ln=La, Nd, Pr), or another electrically conductive perovskite oxide. 10. The process as claimed in claim 1 , wherein the thick metallic layer comprises nickel (Ni) or an alloy thereof or a chromia-forming alloy whose base element is iron (Fe). 11. The process as claimed in claim 1 , wherein the thickness of the ceramic or metallic layer is between 60 and 500 μm. 12. The process as claimed in claim 1 , wherein the chromia-forming metal alloy of the substrate is chosen from ferritic (Fe-Cr), austenitic (Ni—Fe-Cr) stainless-steel alloys or superalloys based on nickel forming at the surface a layer of chromium oxide Cr 2 O 3 , known as the chromia layer. 13. The process as claimed in claim 1 , wherein the substrate consists of at least one sheet, wherein the thickness of the at least one sheet is between 0.1 mm and 1 mm. 14. The process as claimed in claim 1 , wherein the substrate consists of a single plate with flat main faces. 15. The process as claimed in claim 14 , wherein the thickness of the plate is between 1 and 10 mm. 16. The process as claimed in claim 1 , wherein the width of the channels is between 0.15 and 5 mm. 17. The process as claimed in claim 1 , wherein the depth of the channels is between 0.1 and 0.5 mm.
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Complex oxides, optionally doped, of the type AMO3, A being an alkaline earth metal or rare earth metal and M being a metal, e.g. perovskites · CPC title
Grouping of unit cells of planar configuration · CPC title
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