Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element

Patent metadata

Field	Value
Publication number	US-11078123-B2
Application number	US-201816185498-A
Country	US
Kind code	B2
Filing date	Nov 9, 2018
Priority date	Nov 10, 2017
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A 1+α BO x+α N y wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

First claim

What is claimed is:

1. A metal oxynitride thin film having a perovskite structure where octahedrons in which anions occupy six vertexes and a B site atom exists in a center share vertexes, wherein
the metal oxynitride thin film has a composition represented by a compositional formula A 1+α BO x+α N y wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less,
an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and
the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

2. The metal oxynitride thin film according to claim 1 , wherein the AO structure is scattered in the perovskite structure.

3. The metal oxynitride thin film according to claim 1 , wherein
A is one or more selected from the group consisting of Ba, Sr, Ca, La, and Nd; and
B is one or more selected from the group consisting of Ta, Nb, W, and Ti.

4. The metal oxynitride thin film according to claim 2 , wherein
A is one or more selected from the group consisting of Ba, Sr, Ca, La, and Nd; and
B is one or more selected from the group consisting of Ta, Nb, W, and Ti.

5. The metal oxynitride thin film according to claim 1 , wherein
a product of
a relative dielectric constant of the metal oxynitride thin film measured at an electric field strength of 0.5 Vrms/μm and a frequency of 1 kHz and
a specific insulation resistance of the metal oxynitride thin film measured at the electric field strength of 0.5 V/μm
is 2.0×10 13 Ωcm or more.

6. The metal oxynitride thin film according to claim 2 , wherein
a product of
a relative dielectric constant of the metal oxynitride thin film measured at an electric field strength of 0.5 Vrms/μm and a frequency of 1 kHz and
a specific insulation resistance of the metal oxynitride thin film measured at the electric field strength of 0.5 V/μm
is 2.0×10 13 Ωcm or more.

7. The metal oxynitride thin film according to claim 3 , wherein
a product of
a relative dielectric constant of the metal oxynitride thin film measured at an electric field strength of 0.5 Vrms/μm and a frequency of 1 kHz and
a specific insulation resistance of the metal oxynitride thin film measured at the electric field strength of 0.5 V/μm
is 2.0×10 13 Ωcm or more.

8. The metal oxynitride thin film according to claim 4 , wherein
a product of
a relative dielectric constant of the metal oxynitride thin film measured at an electric field strength of 0.5 Vrms/μm and a frequency of 1 kHz and
a specific insulation resistance of the metal oxynitride thin film measured at the electric field strength of 0.5 V/μm
is 2.0×10 13 Ωcm or more.

9. A process of producing the metal oxynitride thin film according to claim 1 comprising a step of forming the metal oxynitride thin film by depositing a metal oxynitride having a perovskite structure with a use of a film formation material, wherein
a raw material, in which a ratio of a molar amount of an A site element of the perovskite structure with respect to a molar amount of a B site element of the perovskite structure is greater than 1.00, is used as the film formation material,
a mixed gas comprising a nitrogen gas and an oxygen gas is used as an atmosphere gas in the step of forming the metal oxynitride thin film, and
a ratio of a partial pressure of the oxygen gas with respect to a partial pressure of the nitrogen gas is 0.2 or more.

10. The process of producing the metal oxynitride thin film according to claim 9 , wherein
A is one or more selected from the group consisting of Ba, Sr, Ca, La, and Nd; and
B is one or more selected from the group consisting of Ta, Nb, W, and Ti.

11. A capacitor element comprising the metal oxynitride thin film according to claim 1 .

Assignees

• Tdk Corp

Inventors

• Yamazaki Kumiko
• Nagamine Yuki
• Shibahara Takeshi
• Umeda Yuji
• Yamazaki Junichi

Classifications

• C04B2235/46

  Gases other than oxygen used as reactant, e.g. nitrogen used to make a nitride phase · CPC title

• C23C14/00

  Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material · CPC title

• C04B35/58014

  based on titanium nitrides, e.g. TiAlON · CPC title

• C04B35/58

  based on borides, nitrides, {i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides} or silicides {(containing free binder metal C22C29/00)} · CPC title

• C01B21/0821

  Oxynitrides of metals, boron or silicon · CPC title