Oxide sintered body, sputtering target and oxide semiconductor film

Patent metadata

Field	Value
Publication number	US-11078120-B2
Application number	US-201716096641-A
Country	US
Kind code	B2
Filing date	Apr 26, 2017
Priority date	Apr 26, 2016
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

First claim

The invention claimed is:

1. An oxide sintered body comprising an oxide including an In element, a Zn element, a Sn element and a Y element, wherein
the oxide sintered body density is equal to or more than 100.01% of a theoretical density,
the oxide sintered body is mainly composed of the bixbyite phase represented by In 2 O 3
and atomic ratios of the Zn element, the Y element, the Sn element and the In element are within the following ranges:
0.01≤Zn/(In+Zn+Y+Sn)≤0.25,

0.03≤Y/(In+Zn+Y+Sn)≤0.25,

0.03≤Sn/(In+Zn+Y+Sn)≤0.30, and

0.20≤In/(In+Zn+Y+Sn)≤0.93.

2. The oxide sintered body according to claim 1 , wherein the oxide sintered body includes a pyrochlore phase represented by Y 2 Sn 2 O 7 .

3. The oxide sintered body according to claim 2 , wherein any one or more of the Y element and the Zn element form a substitutional solid solution with the bixbyite phase.

4. A sputtering target comprising the oxide sintered body according to claim 1 .

5. An oxide semiconductor film formed by sputtering a sputtering target according to claim 4 .

6. The oxide semiconductor film according to claim 5 , wherein the oxide semiconductor film is amorphous.

7. A thin-film transistor comprising the oxide semiconductor film according to claim 5 .

8. The oxide sintered body according to claim 1 , wherein the proportion of presence of the bixbyite phase represented by In 2 O 3 in the oxide sintered body is equal to or more than 50 wt %.

9. An oxide sintered body comprising an In element, a Zn element, a Sn element and a Y element, wherein
atomic ratios of the Zn element and the In element are within ranges below,
the sintered oxide body includes no spinel phase represented by Zn 2 SnO 4 , and
the oxide sintered body is mainly composed of the bixbyite phase represented by In 2 O 3 :
0.01≤Zn/(In+Zn+Y+Sn)≤0.25

0.50≤In/(In+Zn+Y+Sn)

wherein atomic ratios of the Y element and the Sn element are within the following ranges:
0.03≤Y/(In+Zn+Y+Sn)≤0.25, and

0.03≤Sn/(In+Zn+Y+Sn)≤0.30.

10. The oxide sintered body according to claim 9 , wherein the oxide sintered body includes a pyrochlore phase represented by Y 2 Sn 2 O 7 .

11. The oxide sintered body according to claim 10 , wherein any one or more of the Y element and the Zn element form a substitutional solid solution with the bixbyite phase.

12. The oxide sintered body according to claim 9 , wherein the proportion of presence of the bixbyite phase represented by In 2 O 3 in the oxide sintered body is equal to or more than 50 wt %.

13. An oxide sintered body comprising an In element, a Zn element, a Sn element and a Y element, wherein
atomic ratios of the Zn element and the In element are within ranges below, wherein
the oxide sintered body consists of a bixbyite phase represented by In 2 O 3 and a pyrochlore phase represented by Y 2 Sn 2 O 7 , or
the oxide sintered body consists of a bixbyite phase represented by In 2 O 3 , a pyrochlore phase represented by Y 2 Sn 2 O 7 and an indium trizincoindate phase represented by In((Zn 3 In)O 6 )
0.01≤Zn/(In+Zn+Y+Sn)≤0.25

0.50≤In/(In+Zn+Y+Sn).

14. The oxide sintered body according to claim 13 , wherein any one or more of the Y element and the Zn element form a substitutional solid solution with the bixbyite phase.

15. The oxide sintered body according to claim 13 , wherein atomic ratios of the Y element and the Sn element are within the following ranges:
0.03≤Y/(In+Zn+Y+Sn)≤0.25, and

0.03≤Sn/(In+Zn+Y+Sn)≤0.30.

Assignees

• Idemitsu Kosan Co

Inventors

• Inoue Kazuyoshi
• Utsuno Futoshi
• Tomai Shigekazu
• Shibata Masatoshi
• Itose Mami

Classifications

• H10P14/3454

  Amorphous · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3426

  Oxides · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title