Oxide semiconductor compound, semiconductor element provided with layer of oxide semiconductor compound, and laminated body

Patent metadata

Field	Value
Publication number	US-11075303-B2
Application number	US-201816117761-A
Country	US
Kind code	B2
Filing date	Aug 30, 2018
Priority date	Mar 2, 2016
Publication date	Jul 27, 2021
Grant date	Jul 27, 2021

Abstract

An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

First claim

What is claimed is:

1. An oxide semiconductor compound comprising:
gallium; and
oxygen,
wherein the oxide semiconductor compound does not contain indium,
wherein an optical band gap is 3.4 eV or more,
wherein an electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm 2 /Vs or more, and
wherein the oxide semiconductor compound is an amorphous material having a crystallite diameter L being 6 nm or less, obtained by Scherrer's formula shown below:
L=K λ/(β cos θ)

where K is a Scherrer constant, λ is a wavelength of X-ray, β is a half width, and θ is a peak position.

2. The oxide semiconductor compound according to claim 1 ,
wherein when a temperature dependence of an electron density N obtained from the Hall measurement is expressed by a formula:
N=N 0 exp(− E a /kT ),  formula (1)

where T is a measurement temperature (K), k is Boltzmann constant (eVK −1 ), and E a is an activation energy (eV),
N 0 is 10 16 cm −3 or more.

3. The oxide semiconductor compound according to claim 2 , wherein the activation energy Ea is 0.04 eV or more.

4. The oxide semiconductor compound according to claim 1 , further comprising zinc.

5. The oxide semiconductor compound according to claim 1 , wherein an atomic ratio of gallium atoms to an entirety of metallic cations is 35% or more.

6. The oxide semiconductor compound according to claim 1 , consisting essentially of gallium oxide and zinc oxide.

7. The oxide semiconductor compound according to claim 6 , wherein an atomic ratio of gallium atoms to a whole amount of gallium atoms and zinc atoms falls within a range from 35% to 95%.

8. A semiconductor element comprising a layer of an oxide semiconductor compound,
wherein the semiconductor element is any one of a thin film transistor (TFT), a photovoltaic cell, and an organic light emitting diode (OLED), and
wherein the layer is configured of the oxide semiconductor compound according to claim 1 .

9. The semiconductor element according to claim 8 ,
wherein the semiconductor element is a TFT, and
wherein the layer has a field effect mobility of 5 cm 2 /Vs or more.

10. A semiconductor element comprising a layer of an oxide semiconductor compound, wherein the semiconductor element is a thin film transistor (TFT), and
wherein the layer includes gallium and oxygen, has an optical band gap of 3.4 eV or more, and has a field effect mobility of 5 cm 2 /Vs or more,
wherein the layer does not include indium.

11. The semiconductor element according to claim 8 , wherein the semiconductor element comprises:
a substrate;
the layer arranged above the substrate;
a gate electrode arranged above the layer; and
a source electrode and a drain electrode being in contact with the layer, and
wherein the layer is not shielded by a light shielding layer on a side of the substrate.

12. The semiconductor element according to claim 8 , wherein the semiconductor element comprises:
a substrate;
a gate electrode arranged above the substrate;
the layer arranged above the gate electrode; and
a source electrode and a drain electrode being in contact with the layer, and
wherein the layer is not shielded by a light shielding layer on a side opposite to the substrate and the gate electrode.

13. A laminated body comprising:
a substrate; and
a layer of an oxide semiconductor compound arranged above the substrate,
wherein the layer is configured of the oxide semiconductor compound according to claim 1 .

14. The laminated body according to claim 13 , further comprising a barrier film between the substrate and the layer.

15. The laminated body according to claim 13 , wherein the substrate is a glass substrate.

16. The oxide semiconductor compound according to claim 1 , consisting of gallium oxide and zinc oxide.

17. The oxide semiconductor compound according to claim 16 , wherein an atomic ratio of gallium atoms to a whole amount of gallium atoms and zinc atoms falls within a range from 35% to 95%.

18. The oxide semiconductor compound according to claim 1 , wherein an absorption coefficient for an incident light energy of 3.5 eV is 10,000 cm −1 or less.

Assignees

• Tokyo Inst Tech
• Agc Inc

Inventors

• Hosono Hideo
• Kamiya Toshio
• Kumomi Hideya
• Kim Junghwan
• Nakamura Nobuhiro
• Watanabe Satoru
• Miyakawa Naomichi

Classifications

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• C23C14/08 Primary

  Oxides (C23C14/10 takes precedence) · CPC title

• H10D30/6756

  Amorphous oxide semiconductors · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title