Circular printed memory device with rotational detection
US-10396085-B2 · Aug 27, 2019 · US
US11075210B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11075210-B2 |
| Application number | US-201916551145-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 26, 2019 |
| Priority date | Mar 6, 2017 |
| Publication date | Jul 27, 2021 |
| Grant date | Jul 27, 2021 |
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A circular printed memory device and a method for fabricating the circular printed memory device are disclosed. For example, the circular printed memory device includes a base substrate, a plurality of bottom electrodes arranged in a circular pattern on the base substrate, a ferroelectric layer on top of the plurality of bottom electrodes and a single top electrode on the ferroelectric layer that contacts each one of the plurality of bottom electrodes via the ferroelectric layer.
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What is claimed is: 1. A method for fabricating a circular printed memory device, comprising: providing a base substrate; applying a plurality of bottom electrodes in a circular pattern on the base substrate; applying a circular ferroelectric layer on top of the plurality of bottom electrodes; and applying a single top electrode on top of the ferroelectric layer, wherein the ferroelectric layer contacts each one of the plurality of bottom electrodes and the single top electrode. 2. The method of claim 1 , comprising: applying an additional conductive contact layer on a contact area of each one of the plurality of bottom electrode. 3. The method of claim 2 , wherein a memory cell is formed by each one of the plurality of bottom electrodes intersecting the single top electrode and the ferroelectric layer. 4. The method of claim 3 , comprising: storing a single bit in the memory cell. 5. The method of claim 1 , comprising: initializing the circular printed memory device. 6. The method of claim 5 , comprising: testing write/read patterns of the circular printed memory device via a reading device, wherein a perimeter member of the single top electrode has an approximately zero resistance and is identified as pin 0 by the reading device. 7. The method of claim 6 , comprising: identifying each subsequent bottom electrode of the plurality of bottom electrodes in a clockwise or counterclockwise fashion after the pin 0 is identified. 8. The method of claim 1 , wherein the base substrate comprises a continuous roll and the method is repeated to fabricate a plurality of circular printed memory devices. 9. The method of claim 1 , wherein the circular pattern comprises a single open position between two of the plurality of bottom electrodes and a center open position at a center of the circular pattern. 10. The method of claim 9 , wherein the single top electrode comprises a ring comprising a center member and a perimeter member. 11. The method of claim 10 , wherein the perimeter member is located on top of the ferroelectric layer in the single open position. 12. The method of claim 10 , wherein the perimeter member and each one of the plurality of bottom electrodes comprise an approximately circular contact pad. 13. The method of claim 10 , wherein the center member is located on top of the ferroelectric layer in the center member. 14. The method of claim 1 , wherein a number of the plurality of bottom electrodes is a function of a number of bits to be stored in the circular printed memory device.
Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title
using ferroelectric record carriers; Record carriers therefor · CPC title
Built-in arrangements for testing, e.g. built-in self testing [BIST] {or interconnection details} · CPC title
Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards {also with resonating or responding marks without active components} · CPC title
Supports for storage elements {, e.g. memory modules}; Mounting or fixing of storage elements on such supports · CPC title
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