Nanoscale etching of light absorbing materials using light and an electron donor solvent

Patent metadata

Field	Value
Publication number	US-11073764-B2
Application number	US-201916368616-A
Country	US
Kind code	B2
Filing date	Mar 28, 2019
Priority date	Mar 29, 2018
Publication date	Jul 27, 2021
Grant date	Jul 27, 2021

Abstract

A method for etching a light absorbing material permits directly writing a pattern of etching of silicon nitride and other light absorbing materials, without the need of a lithographic mask, and allows the creation of etched features of less than one micron in size. The method can be used for etching deposited silicon nitride films, freestanding silicon nitride membranes, and other light absorbing materials, with control over the thickness achieved by optical feedback. The etching is promoted by solvents including electron donor species, such as chloride ions. The method provides the ability to etch silicon nitride and other light absorbing materials, with fine spatial and etch rate control, in mild conditions, including in a biocompatible environment. The method can be used to create nanopores and nanopore arrays.

First claim

What is claimed is:

1. A method for etching a light absorbing material, the method comprising:
contacting the light absorbing material with a solvent comprising an electron donor species; and
exposing an interface between the solvent and the light absorbing material to light having a wavelength within an absorption band of a light absorbance spectrum of the light absorbing material to induce etching of the light absorbing material, at the interface, by the light and the electron donor species to create an etched feature of less than 1 micron in size, the light having a wavelength between 10 nm and 700 nm and having an average power density of between 10 5 watts per square centimeter and 10 8 watts per square centimeter.

2. The method of claim 1 , comprising exposing the interface between the solvent and the light absorbing material to the light in the absence of a lithographic mask.

3. The method of claim 1 , further comprising forming the etched feature underneath a surface of a structure of which the light absorbing material forms at least a portion.

4. The method of claim 1 , further comprising controlling a thickness of the etched feature using feedback from an optical measurement of the etched feature.

5. The method of claim 1 , wherein the solvent is biocompatible, and further comprising performing the etching in a biocompatible environment.

6. The method of claim 1 , further comprising using the etching to polish a surface of the light absorbing material.

7. The method of claim 1 , comprising directly controlling a location of the etched feature on the light absorbing material based on a location of the light on the light absorbing material.

8. The method of claim 1 , wherein the electron donor species comprises at least one of: a halogen ion and a hydroxide ion.

9. The method of claim 8 , wherein the electron donor species comprises a chloride ion.

10. The method of claim 1 , further comprising performing a three-dimensional, layer by layer etching of the light absorbing material.

11. The method of claim 10 , further comprising using a light image projection device to provide the light, to perform the three-dimensional, layer by layer etching, based on an electrical signal comprising a three-dimensional etching pattern having features with dimensions less than 1 micron in size.

12. The method of claim 1 , further comprising reflecting a beam of the light from a spatial light modulator onto the light absorbing material.

13. The method of claim 12 , wherein the reflecting the beam of the light from the spatial light modulator onto the light absorbing material comprises reflecting the beam of the light from a digital micromirror device onto the light absorbing material.

14. The method of claim 1 , wherein the light absorbing material comprises silicon.

15. The method of claim 14 , wherein the light absorbing material comprises at least one of a silicon-containing nitride and a silicon-containing carbide.

16. The method of claim 15 , wherein the light absorbing material comprises a chemical formula SiN x , where x is greater than or equal to 0 and less than or equal to 2.

17. The method of claim 15 , wherein the electron donor species comprises at least one of: a halogen ion and a hydroxide ion.

18. The method of claim 1 , wherein the etching comprises forming a nanopore through the light absorbing material, the nanopore having a diameter greater than about 1 nanometer and less than about 1 micron.

19. The method of claim 18 , wherein the light absorbing material comprises a thickness less than about 1 micron at the location of the nanopore.

20. The method of claim 18 , wherein the etched feature defines a nanopore having a greater diameter on one side of the light absorbing material than on an opposite side of the light absorbing material.

21. The method of claim 18 , further comprising using the etching to form an array of a plurality of nanopores.

22. The method of claim 18 , further comprising assisting the etching by applying a voltage across the light absorbing material to promote dielectric breakdown of the light absorbing material.

23. The method of claim 18 , wherein forming the nanopore comprises limiting a power density of the light after a current measured through the light absorbing material increases above a current threshold during the etching.

24. The method of claim 23 , comprising limiting the current threshold to determine a size of the nanopore formed by the etching.

Assignees

• Univ Northeastern

Inventors

• Wanunu Meni
• Yamazaki Hirohito

Classifications

• G03F7/0041

  providing an etching agent upon exposure (G03F7/075 takes precedence; photolytic halogen compounds G03F7/0295) · CPC title

• G03F7/2053 Primary

  using a laser (ablative removal B41C) · CPC title

• C04B41/5353

  Wet etching, e.g. with etchants dissolved in organic solvents · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/2043 Primary

  with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists · CPC title