Sensor device, method for producing same, and gas sensor

Patent metadata

Field	Value
Publication number	US-11073492-B2
Application number	US-201816170101-A
Country	US
Kind code	B2
Filing date	Oct 25, 2018
Priority date	Nov 8, 2017
Publication date	Jul 27, 2021
Grant date	Jul 27, 2021

Abstract

A sensor device includes a first electrode and a second electrode disposed over a substrate, and a sensitive film including a base film which couples the first electrode and the second electrode to each other and contains Cu and a halogen element and PEDOT/PSS which bonds to the base film.

First claim

What is claimed is:

1. A sensor device comprising:
a first electrode and a second electrode disposed over a substrate; and
a sensitive film including:
a base film which couples the first electrode and the second electrode to each other and contains Cu and a halogen element; and
PEDOT/PSS which bonds to the base film.

2. The sensor device according to claim 1 , wherein the PEDOT/PSS bonds to grain boundaries of crystal grains which is included in the base film, and surfaces of the crystal grains.

3. The sensor device according to claim 1 , wherein the sensitive film includes PTS.

4. The sensor device according to claim 1 , wherein the sensitive film includes an aldehyde or carboxylic acid.

5. The sensor device according to claim 4 , wherein the aldehyde is nonanal.

6. The sensor device according to claim 4 , wherein the aldehyde is nonenal.

7. The sensor device according to claim 4 , wherein the carboxylic acid is nonanoic acid.

8. The sensor device according to claim 1 , wherein the sensitive film includes a ketone.

9. The sensor device according to claim 8 , wherein the ketone is acetone.

10. A method for producing a sensor device, comprising:
forming a first electrode and a second electrode over a substrate;
forming a Cu film so as to couple the first electrode and the second electrode to each other; and
forming a sensitive film by treating the Cu film with a treatment liquid which contains Cu and a halogen element and is processed by adding PEDOT/PSS, the sensitive film including a base film containing Cu and the halogen element, and PEDOT/PSS which bonds to the base film.

11. The method according to claim 10 , wherein a treatment liquid which is obtained by further adding PTS to the treatment liquid is used as the treatment liquid in the forming the sensitive film.

12. The method according to claim 10 , wherein a treatment liquid which is obtained by further adding an aldehyde or carboxylic acid to the treatment liquid is used as the treatment liquid in the forming the sensitive film.

13. The method according to claim 12 , wherein a treatment liquid which is obtained by adding nonanal to the treatment liquid is used as the treatment liquid in the forming the sensitive film.

14. The method according to claim 12 , wherein the treatment liquid used in the forming of the sensitive film is a treatment liquid which is obtained by adding nonenal to the treatment liquid is used as the treatment liquid in the forming the sensitive film.

15. The method according to claim 12 , wherein the treatment liquid used in the forming of the sensitive film is a treatment liquid which is obtained by adding nonanoic acid to the treatment liquid is used as the treatment liquid in the forming the sensitive film.

16. The method according to claim 10 , wherein the treatment liquid used in the forming of the sensitive film is a treatment liquid which is obtained by further adding a ketone to the treatment liquid is used as the treatment liquid in the forming the sensitive film.

17. The method according to claim 16 , wherein the treatment liquid used in the forming of the sensitive film is a treatment liquid which is obtained by adding acetone to the treatment liquid is used as the treatment liquid in the forming the sensitive film.

18. A gas sensor comprising:
a sensor device; and
a processor coupled to the sensor device,
the sensor device includes:
a first electrode and a second electrode disposed over a substrate; and
a sensitive film including:
a base film which couples the first electrode and the second electrode to each other and contains Cu and a halogen element; and
PEDOT/PSS which bonds to the base film.

19. The gas sensor according to claim 18 , wherein the PEDOT/PSS bonds to grain boundaries of crystal grains which is included in the base film, and surfaces of the crystal grains.

20. The gas sensor according to claim 18 , wherein the processor acquires a resistance value between the first electrode and the second electrode, and converts a variation in the resistance value into concentration related to the sensitive film.

Assignees

• Fujitsu Ltd

Inventors

• Ushigome Michio
• Tsuboi Osamu
• Karasawa Kazuaki

Classifications

• G01N33/497 Primary

  of gaseous biological material, e.g. breath · CPC title

• A61B2562/125

  characterised by the manufacture of electrodes · CPC title

• A61B5/082

  Evaluation by breath analysis, e.g. determination of the chemical composition of exhaled breath (A61B5/083, A61B5/091 take precedence) · CPC title

• G01N27/129

  Diode type sensors, e.g. gas sensitive Schottky diodes (capacitor type sensors G01N27/227; field-effect transistor type sensors G01N27/414) · CPC title

• G01N27/126 Primary

  comprising organic polymers · CPC title