Fill on demand ampoule refill

Patent metadata

Field	Value
Publication number	US-11072860-B2
Application number	US-201514720595-A
Country	US
Kind code	B2
Filing date	May 22, 2015
Priority date	Aug 22, 2014
Publication date	Jul 27, 2021
Grant date	Jul 27, 2021

Abstract

Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

First claim

What is claimed is:

1. A method for filling an ampoule of a substrate processing apparatus, the method comprising:
(a) determining that an ampoule fill start condition for filling the ampoule with a liquid precursor is met;
(b) filling the ampoule with precursor, wherein filling the ampoule with the precursor is performed concurrent with at least one other substrate processing operation;
(c) determining that a sensor level in the ampoule indicates that the ampoule is not full, wherein a primary fill stop condition is met when the sensor level in the ampoule indicates that the ampoule is full;
(d) maintaining a cumulative time of filling the ampoule, wherein the cumulative time of filling the ampoule is all of the time that precursor is flowing to the ampoule since the cumulative time of filling the ampoule was last reset, wherein the cumulative time of filling the ampoule is reset when the sensor level in the ampoule indicates that the ampoule is full;
(e) determining that a secondary fill stop condition is met, wherein the secondary fill stop condition comprises determining that the cumulative time of filling exceeds a threshold; and
(f) in response to determining that the secondary fill stop condition is met and in response to determining that the sensor level in the ampoule indicates that the ampoule is not full, ceasing the filling of the ampoule with the precursor.

2. The method of claim 1 , wherein the cumulative time of filling is temporarily stopped one or more times when ampoule refill temporarily ceases and deposition commences, but the cumulative time of filling resumes when filling starts again.

3. The method of claim 1 , wherein the threshold is between about 50 seconds and 90 seconds.

4. The method of claim 1 , further comprising initiating a soft shutdown when ceasing the filling in operation (e).

5. The method of claim 1 , wherein the sensor generating the sensor level in the ampoule is malfunctioning.

6. The method of claim 1 , wherein a system providing the liquid precursor to the ampoule is malfunctioning.

7. The method of claim 1 , wherein the ampoule fill start condition comprises determining that the substrate processing apparatus is in or is about to enter a phase after one or more substrates have been loaded into a substrate processing chamber of the substrate processing apparatus, before any of the one or more substrates have been unloaded from the substrate processing chamber, and while deposition is not occurring in the substrate processing chamber.

8. The method of claim 1 , wherein the ampoule fill start condition comprises determining that a sequence of deposition operations has been completed on substrates contained in the substrate processing apparatus.

9. The method of claim 8 , wherein the sequence of deposition operations are deposition operations associated with Atomic Layer Deposition.

10. The method of claim 1 , wherein the ampoule fill start condition includes determining that the precursor volume is below a threshold volume.

11. The method of claim 1 , wherein the ampoule fill start condition includes determining that setup for deposition operations is currently being performed.

12. The method of claim 1 , wherein the at least one other substrate processing operation that is performed concurrent with filling the ampoule includes a wafer indexing operation.

13. The method of claim 1 , wherein the at least one other substrate processing operation that is performed concurrent with filling the ampoule includes a temperature soak of the precursor and/or the substrate.

14. The method of claim 1 , wherein the at least one other substrate processing operation that is performed concurrent with filling the ampoule includes a pump to base operation.

Assignees

• Lam Res Corp

Inventors

• Nguyen Tuan
• Ranganathan Eashwar
• Swaminathan Shankar
• Lavoie Adrien
• Baldasseroni Chloe
• Chandrasekharan Ramesh
• Pasquale Frank L
• Petraglia Jennifer L

Classifications

• C23C16/52 Primary

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/448

  characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title