Micro-LED module and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-11069664-B2
Application number	US-201916524790-A
Country	US
Kind code	B2
Filing date	Jul 29, 2019
Priority date	Dec 23, 2016
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

A micro-LED module is disclosed. The micro-LED module includes: a micro-LED including a plurality of LED cells, each of which includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a submount substrate mounted with the micro-LED; a plurality of electrode pads formed on the micro-LED cells; a plurality of electrodes formed corresponding to the plurality of electrode pads on the submount substrate; a plurality of connection members through which the plurality of electrode pads are connected to the corresponding plurality of electrodes; and a gap fill layer formed in the gap between the micro-LED and the submount substrate and having a bonding strength to the micro-LED and the submount substrate.

First claim

What is claimed is:

1. A micro-LED module comprising:
a micro-LED comprising:
a plurality of LED cells arrayed in a matrix, each of the plurality of LED cells comprising an n-type semiconductor layer, an active layer, and a p-type semiconductor layer;
a plurality of p-type electrode pads on the p-type semiconductor layers of the plurality of LED cells; and
an n-type electrode pad formed in an exposed area of the n-type semiconductor layer, the exposed area being formed along a peripheral edge of the micro-LED;

an active matrix substrate comprising:
a plurality of individual electrode pads corresponding to the plurality of p-type electrode pads of the micro-LED;
a common electrode pad corresponding to the n-type electrode pad of the micro-LED;
a plurality of first pillars corresponding to the plurality of individual electrode pads; and
a second pillar corresponding to the common electrode pad;

a plurality of first solder bonding portions bonding each of the plurality of first pillars of the active matrix substrate to the corresponding p-type electrode pad of the micro-LED; and
a second solder bonding portion bonding the second pillar of the active matrix substrate to the n-type electrode pad of the micro-LED,
wherein a maximum cross-sectional diameter of each of the plurality of first solder bonding portions is larger than a diameter of the corresponding first pillar, and a minimum cross-sectional diameter of each of the plurality of first solder bonding portions is larger than 80% and smaller than 100% of the diameter of the corresponding first pillar.

2. The micro-LED module according to claim 1 , wherein a portion having the maximum cross-sectional diameter is located at a contact position with an end of the first pillar or a side surface of the corresponding p-type electrode pad.

3. The micro-LED module according to claim 1 , wherein a portion having the minimum cross-sectional diameter is located at a midpoint of the first solder bonding portion.

Assignees

• Lumens Co Ltd

Inventors

• Kim Daewon
• Shin Eunsung
• Moon Myungji
• Chang Hanbeet
• Kim Yongpil
• Park Jaesoon

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• H10W72/077

  Connecting of TAB connectors · CPC title

• H10W72/222

  Multilayered bumps, e.g. a coating on top and side surfaces of a bump core · CPC title

• H10W72/012

  of bump connectors, dummy bumps or thermal bumps · CPC title

• H10W90/00 Primary

  Package configurations · CPC title