Pressure sensor assemblies with antenna arrays

Patent metadata

Field	Value
Publication number	US-11067465-B2
Application number	US-201916443299-A
Country	US
Kind code	B2
Filing date	Jun 17, 2019
Priority date	Jun 17, 2019
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

A pressure sensor assembly and pressure sensing method include a first receive antenna array configured to receive a first signal at a first frequency, a second receive antenna array configured to receive a second signal at a second frequency that differs from the first frequency, and a diode coupled to the first receive antenna array and the second receive antenna array. The diode is configured to receive the first signal at the first frequency and the second signal at the second frequency and output a third signal at a third frequency that is a difference between the first frequency and the second frequency. A transmit antenna array is coupled to the diode. The transmit antenna array is configured to receive the third signal at the third frequency and output the third signal at the third frequency.

First claim

What is claimed is:

1. A pressure sensor assembly, comprising:
a first receive antenna array configured to receive a first signal at a first frequency;
a second receive antenna array configured to receive a second signal at a second frequency that differs from the first frequency;
a diode coupled to both the first receive antenna array and the second receive antenna array, wherein the diode is configured to receive the first signal at the first frequency and the second signal at the second frequency and output a third signal at a third frequency that is a difference between the first frequency and the second frequency; and
a transmit antenna array coupled to the diode, wherein the transmit antenna array is configured to receive the third signal at the third frequency and output the third signal at the third frequency.

2. The pressure sensor assembly of claim 1 , further comprising a first substrate, wherein the first receive antenna array, the second receive antenna array, and the transmit antenna array are disposed on the first substrate.

3. The pressure sensor assembly of claim 1 , further comprising:
a first microstrip feed that connects the transmit antenna array to the diode; and
a second microstrip feed that connects the first receive antenna array and the second receive antenna array to the diode.

4. The pressure sensor assembly of claim 1 , wherein the first receive antenna array and the second receive antenna array operate in a W-band, and wherein the transmit antenna array operates in an X-band.

5. The pressure sensor assembly of claim 1 , wherein the diode is one of a p-n junction diode, a PIN diode, a Schottky diode, a Zener diode, or a tunnel diode.

6. The pressure sensor assembly of claim 5 , wherein one or more of the first receive antenna array, the second receive antenna array, or the transmit antenna array are edge-fed in relation to the diode.

7. The pressure sensor assembly of claim 5 , wherein one or more of the first receive antenna array, the second receive antenna array, or the transmit antenna array are proximity-coupled in relation to the diode.

8. The pressure sensor assembly of claim 1 , further comprising at least one cavity disposed within at least one substrate underneath at least a portion of one or more of the first receive antenna array, the second receive antenna array, or the transmit antenna array.

9. The pressure sensor assembly of claim 8 , wherein the at least one cavity comprises a first cavity within the at least one substrate underneath at least a portion of one or both of the first receive antenna array or the second receive antenna array.

10. The pressure sensor assembly of claim 9 , further comprising:
a vent channel formed through and extending within the at least one substrate, wherein the vent channel is fluidly connected to the first cavity; and
a vent outlet formed within the at least one substrate, wherein the vent outlet is fluidly connected to the vent channel.

11. The pressure sensor assembly of claim 8 , wherein the at least one cavity comprises a first cavity within the at least one substrate underneath at least a portion of the transmit antenna array.

12. The pressure sensor assembly of claim 8 , wherein the at least one cavity comprises:
a first cavity within the at least one substrate underneath at a least a portion of one or both of the first receive antenna array or the second receive antenna array; and
a second cavity within the at least one substrate underneath at least a portion of the transmit antenna array.

13. The pressure sensor assembly of claim 8 , further comprising at least one diaphragm positioned over the at least one cavity.

14. The pressure sensor assembly of claim 1 , further comprising a first substrate that is a P-type doped semiconductor substrate.

15. The pressure sensor assembly of claim 14 , wherein a first N-type impurity is doped on the first substrate.

16. The pressure sensor assembly of claim 15 , wherein a second N-type impurity is doped on the first N-type impurity to form, at least in part, the diode.

17. The pressure sensor assembly of claim 16 , further comprising an oxidation layer deposited over the first substrate.

18. The pressure sensor assembly of claim 17 , wherein a metal is deposited over the oxidation layer to form the first receive antenna array, the second receive antenna array, a first microstrip feed, a second microstrip feed, the transmit antenna array, and electrical contacts.

19. The pressure sensor assembly of claim 18 , further comprising a first cavity, a vent channel, and a vent outlet formed into the first substrate.

20. The pressure sensor assembly of claim 19 , further comprising:
a second substrate; and
a backside ground plane deposited onto the second substrate, wherein the second substrate is bonded to the first substrate.

21. The pressure sensor assembly of claim 1 , further comprising a first substrate that is an intrinsic semiconducting substrate.

22. The pressure sensor assembly of claim 21 , wherein the first substrate is doped with a first P-type impurity.

23. The pressure sensor assembly of claim 22 , wherein a first N-type impurity doped over a portion of the first P-type impurity on the first substrate.

24. The pressure sensor assembly of claim 23 , wherein a second P-type impurity is doped over a portion of the first N-type impurity to define, at least in part, the diode.

25. The pressure sensor assembly of claim 24 , further comprising a passivation layer deposited over the first substrate.

26. The pressure sensor assembly of claim 25 , further comprising a first metal layer that forms electronic contacts deposited over the passivation layer.

27. The pressure sensor assembly of claim 26 , further comprising a second metal layer that forms a microstrip feed network deposited over the first metal layer.

28. The pressure sensor assembly of claim 27 , further comprising a third metal layer that forms a backside ground plane deposited on the first substrate opposite from the second metal layer.

29. The pressure sensor assembly of claim 28 , wherein the pressure sensor assembly further comprises a fourth metal layer that forms the first receive antenna array, the second receive antenna array, and the transmit antenna array on a second substrate.

30. The pressure sensor assembly of claim 29 , further comprising at least one cavity formed in the first substrate or the second substrate.

31. The pressure sensor assembly of claim 30 , wherein the at least one cavity comprises:
a first cavity formed in the first substrate underneath at least a portion of the transmit antenna array; and
a second cavity formed in the second substrate underneath at least a portion of one or both of the first receive antenna array or the second receive antenna array.

32. The pressure sensor assembly of claim 30 , wherein the first substrate is bonded to the second substrate.

33. A pressure sensor assembly, comprising:
at least one substrate;
a backside ground plane coupled to the at least one substrate;
a first receive antenna array disposed on the at least one substrate, wherein the first receive antenna array is configured to receive a first signal at a first frequency;
a second receive antenna array disposed on the at least one substrate

Assignees

• Boeing Co

Inventors

• Rogers John E

Classifications

• G01L19/148 Primary

  Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation · CPC title

• G01L9/0019

  of a semiconductive element · CPC title

• G01L19/083

  electrical · CPC title

• H01Q21/065

  Patch antenna array · CPC title

• G01M15/02 Primary

  Details or accessories of testing apparatus · CPC title