Composition for etching, method for etching insulator and method for manufacturing semiconductor device, and novel compounds

Patent metadata

Field	Value
Publication number	US-11066601-B2
Application number	US-202016886944-A
Country	US
Kind code	B2
Filing date	May 29, 2020
Priority date	May 30, 2019
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1:wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.

First claim

What is claimed is:

1. An etching composition, comprising:
phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1:

where
A is an n-valent radical, where n is an integer of 1 to 6,
L is a direct bond or hydrocarbylene,
Y is selected from NR 1 , O, PR 2 and S, where R 1 to R 2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or substituted or unsubstituted non-hydrocarbyl group,
X and Z are independently selected from N, O, P and S, and
R a to R c are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.

2. The etching composition of claim 1 , wherein R a to R c are independently selected from an unshared electron pair, hydrogen, or a substituted or unsubstituted C 1 -C 20 hydrocarbyl group, a substituted or unsubstituted C 6 -C 20 aryl group, and a functional group represented by the following formula:

where R 4 to R 9 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, or a substituted or unsubstituted non-hydrocarbyl group, and
L 1 is a direct bond or hydrocarbylene.

3. The etching composition of claim 2 , wherein R 4 to R 9 are all hydrogen.

4. The etching composition of claim 2 , wherein the L 1 is C 1 -C 10 alkylene.

5. The etching composition of claim 1 , wherein A is hydrocarbyl, hydrocarbylene, a radical having N as a binding site, a radical having 0 as a binding site, a radical having S as a binding site, or a radical having P as a binding site.

6. The etching composition of claim 1 , wherein A is:
a monovalent radical, which is C 1 -C 20 alkyl or C 6 -C 20 aryl, independently existing or connected to R a via a heteroatom of O, N or S to form a ring;
a bivalent to hexavalent radical, which is

(q is an integer of 0 to 4);
a radical having N as a binding site, which is *—NR 11 R 12 , *—NR 13 —*,

—NR 14 CSNR 15 —*, *—NR 16 CONR 17 —*, *—NR 18 L 2 NR 19 —*, *—NR 20 CONR 21 L 3 NR 22 CONR 23 —*, *—NR 24 CONL 4 L 5 NCONR 25 —*,

(R 11 to R 26 are independently hydrogen, a C 1 -C 20 alkyl group or a C 6 -C 20 aryl group; L 2 to L 6 are C 1 -C 20 alkylene, C 6 -C 20 arylene, or R 31 (OR 32 ) r (R 31 and R 32 are independently C 1 -C 20 alkylene, and r is an integer of 1 to 5); L 7 is a direct bond or (CH 2 ) s NR 33 NR 34 (R 33 and R 34 are independently hydrogen, a C 1 -C 20 alkyl group or a C 6 -C 20 aryl group, and s is an integer of 1 to 5);
a radical having O as a binding site, which is *—O—*;
a radical having S as a binding site, which is *—S—*, *—S—S—*,

or
a radical having P as a binding site, which is

(R 27 and R 28 are independently hydrogen, a C 1 -C 20 alkyl group, a C 6 -C 20 aryl group, a C 1 -C 20 alkoxy group, or a (C 1 -C 20 ) alkyl (C 1 -C 20 ) alkoxy group).

7. The etching composition of claim 1 , wherein A is *—(CH 2 ) p R 10 (p is an integer of 0 to 3, R 10 is hydrogen (p is not 0), halogen (p is not 0), a substituted or unsubstituted C 1 -C 20 alkyl group, a substituted or unsubstituted C 6 -C 20 aryl group, a substituted or unsubstituted (C 1 -C 20 ) alkyl (C 1 -C 20 ) alkoxy) group), *—(CH═CH) m N═ (which is connected to R a via N to form a ring, and m is an integer of 1 to 3),

(q is an integer of 1 to 4), *—NR 11 R 12 (R 11 and R 12 are independently hydrogen, a C 1 -C 20 alkyl group or a C 6 -C 20 aryl group), *—NR 13 —*(R 13 is independently hydrogen, a C 1 -C 20 alkyl group or a C 6 -C 20 aryl group), or

8. The etching composition of claim 1 , wherein A is *—CH 3 ,

*—CH═CHN═ (which is connected to R a via N to form a ring),

*—(CH 2 ) 2 —OCH 3 , or

9. The etching composition of claim 1 , wherein L is C 1 -C 10 alkylene.

10. The etching composition of claim 1 , wherein the compound represented by Formula 1 is selected from following Structural Formulae 1 to 8:

11. The etching composition of claim 1 , wherein the silane compound comprising at least one silicon (Si) atom is represented by Formula 2 below:

wherein, in Formula 2,
R 51 to R 54 are independently hydrogen, a C 1 -C 20 hydrocarbyl group, or a C 1 -C 20 heterohydrocarbyl group, and R 51 to R 54 independently exist or two or more thereof form a ring via a heteroatom.

12. The etching composition of claim 1 , wherein the etching composition comprises the compound represented by Formula 1 in an amount of 0.001 wt % to 5 wt %, based on a total weight of the etching composition.

13. The etching composition of claim 1 , wherein the etching composition comprises 70 wt % to 90 wt % of phosphoric acid, 1 wt % to 20 wt % of phosphoric anhydride, 0.001 wt % to 5 wt % of the compound represented by Formula 1, 0.005 wt % to 1 wt % of the silane compound comprising at least one Si atom (excluding the compound represented by Formula 1), and a remainder of water.

14. A method for manufacturing a semiconductor device, comprising etching an insulator film, using the etching compound of claim 1 .

Assignees

• Sk Innovation Co Ltd
• Sk Mat Co Ltd

Inventors

• Kim Cheol Woo
• Seon Min Kyung
• Shim Yu Na
• Kwak Jae Hoon
• Kim Young Bom
• Lee Jong Ho
• Jo Jin Kyung

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/282

  of inorganic materials · CPC title

• C09K13/06 Primary

  with organic material · CPC title

• C07F7/1804 Primary

  Compounds having Si-O-C linkages (Si-O-acyl linkages C07F7/1896) · CPC title

• H01L21/47573

  Electricity · mapped topic