Lutetium nitride-based phosphor and light emitting device comprising same

Patent metadata

Field	Value
Publication number	US-11066600-B2
Application number	US-201716313894-A
Country	US
Kind code	B2
Filing date	Jun 30, 2017
Priority date	Jun 30, 2016
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

A lutetium nitride-based phosphor and a light emitting device comprising the same, wherein the lutetium nitride-based phosphor comprises an inorganic compound, and the composition of the inorganic compound comprises at least an M element, an A element, a D element and an R element; the M element is one or two elements selected from a group consisting of Lu, La, Pr, Nd, Sm, Y, Tb and Gd, and necessarily comprises Lu; the A element is Si and/or Ge; the D element is one or two elements selected from a group consisting of O, N and F, and necessarily comprises N; the R element is Ce and/or Dy, and the atomic molar ratio of the Lu element in the M element is greater than 50%. Because the ion radius of Lu3+ is smaller than the ion radius of La3+, the light color performance thereof can be flexibly adjusted according to needs.

First claim

What is claimed is:

1. A lutetium nitride-based phosphor, comprising an inorganic compound, wherein the composition of the inorganic compound comprises at least an M element, an A element, a D element and an R element, wherein the M element is one or two elements selected from a group consisting of Lu, La, Pr, Nd, Sm, Y, Tb and Gd, and necessarily comprises Lu; the A element is Si and/or Ge; the D element is one or two elements selected from a group consisting of O, N and F, and necessarily comprises N; the R element is Ce and/or Dy, and the atomic molar ratio of the Lu element in the M element is greater than 50%, wherein
the inorganic compound has a crystal structure the same as Y 3 Si 6 N 11 ;
the inorganic compound has a composition of M 3-a A x D y :aR, wherein parameters a, x and y satisfy the following conditions: 0<a≤0.8, 5≤x≤7, 10≤y≤12.

2. The lutetium nitride-based phosphor according to claim 1 , wherein the atomic molar ratio of the Lu element in the M element is ≥70%, preferably ≥80%.

3. The lutetium nitride-based phosphor according to claim 1 , wherein the A element is Si.

4. The lutetium nitride-based phosphor according to claim 1 , wherein the D element is N.

5. The lutetium nitride-based phosphor according to claim 1 , wherein the R element is Ce.

6. The lutetium nitride-based phosphor according to claim 5 , wherein 0.1≤a≤0.5; 5.5≤x≤6.5, preferably x=6; 10.5≤y≤11.5, preferably y=11.

7. The lutetium nitride-based phosphor according to claim 1 , wherein the lutetium nitride-based phosphor has a peak wavelength of excitation spectrum at 400 to 460 nm, and can emit a peak wavelength covering the range between 475 to 540 nm.

8. A light emitting device, comprising a fluorescent substance and an excitation light source, wherein the fluorescent substance comprises the lutetium nitride-based phosphor according to claim 1 .

9. The light emitting device according to claim 8 , wherein the excitation light source is a semiconductor light emitting diode or a laser light source, preferably, the excitation light source has an emission peak wavelength of 400 to 490 nm.

10. The light emitting device according to claim 8 , wherein the fluorescent substance further comprises another/other phosphor(s) selected from a group consisting of anyone or more of (Y,Gd,Lu,Tb) 3 (Al,Ga) 5 O 12 :Ce 3+ ,β-SiAlON:Eu 2+ , (Ca,Sr)AlSiN 3 :Eu 2+ , (Li,Na,K) 2 (Ti,Zr,Si,Ge)F 6 :Mn 4+ and (Ca,Sr,Ba)MgAl 10 O 17 :Eu 2+ .

11. The lutetium nitride-based phosphor according to claim 1 , wherein the A element is Si, the D element is N, and the R element is Ce.

12. The lutetium nitride-based phosphor according to claim 1 , wherein the A element is Si, the D element is N, and the R element is Ce, and
0.1≤a≤0.5; 5.5≤x≤6.5, preferably x=6; 10.5≤y≤11.5, preferably y=11.

13. The lutetium nitride-based phosphor according to claim 1 , wherein the A element is Si, the D element is N, and the R element is Ce,
0.1≤a≤0.5; 5.5≤x≤6.5, preferably x=6; 10.5≤y≤111.5, preferably y=11;
the lutetium nitride-based phosphor has a peak wavelength of excitation spectrum at 400 to 460 nm, and can emit a peak wavelength covering the range between 475 to 540 nm.

14. The light emitting device according to claim 8 , wherein the excitation light source is a semiconductor light emitting diode or a laser light source, preferably, the excitation light source has an emission peak wavelength of 400 to 490 nm; and
the fluorescent substance further comprises another/other phosphor(s) selected from a group consisting of anyone or more of (Y,Gd,Lu,Tb) 3 (Al,Ga) 5 O 12 :Ce 3+ ,β-SiAlON:Eu 2+ , (Ca,Sr)AlSiN 3 :Eu 2+ , (Li,Na,K) 2 (Ti,Zr,Si,Ge)F 6 :Mn 4+ and (Ca,Sr,Ba)MgAl 10 O 17 :Eu 2+ .

15. The light emitting device according to claim 8 , wherein the excitation light source is a semiconductor light emitting diode or a laser light source, preferably, the excitation light source has an emission peak wavelength of 400 to 490 nm;
the fluorescent substance further comprises another/other phosphor(s) selected from a group consisting of anyone or more of (Y,Gd,Lu,Tb) 3 (Al,Ga) 5 O 12 :Ce 3+ ,β-SiAlON:Eu 2+ , (Ca,Sr)AlSiN 3 :Eu 2+ , (Li,Na,K) 2 (Ti,Zr,Si,Ge)F 6 :Mn 4+ and (Ca,Sr,Ba)MgAl 10 O 17 :Eu 2+ ; and
the A element is Si, the D element is N, and the R element is Ce.

16. The light emitting device according to claim 8 , wherein the excitation light source is a semiconductor light emitting diode or a laser light source, preferably, the excitation light source has an emission peak wavelength of 400 to 490 nm;
the fluorescent substance further comprises another/other phosphor(s) selected from a group consisting of anyone or more of (Y,Gd,Lu,Tb) 3 (Al,Ga) 5 O 12 :Ce 3+ ,β-SiAlON:Eu 2+ , (Ca,Sr)AlSiN 3 :Eu 2+ , (Li,Na,K) 2 (Ti,Zr,Si,Ge)F 6 :Mn 4+ and (Ca,Sr,Ba)MgAl 10 O 17 :Eu 2+ ;
the A element is Si, the D element is N, and the R element is Ce; and
0.1≤a≤0.5; 5.5≤x≤6.5, preferably x=6; 10.5≤y≤11.5, preferably y=11.

17. The light emitting device according to claim 8 , wherein the excitation light source is a semiconductor light emitting diode or a laser light source, preferably, the excitation light source has an emission peak wavelength of 400 to 490 nm;
the fluorescent substance further comprises another/other phosphor(s) selected from a group consisting of anyone or more of (Y,Gd,Lu,Tb) 3 (Al,Ga) 5 O 12 :Ce 3+ , β-SiAlON:Eu 2+ , (Ca,Sr)AlSiN 3 :Eu 2+ , (Li,Na,K) 2 (Ti,Zr,Si,Ge)F 6 :Mn 4+ and (Ca,Sr,Ba)MgAl 10 O 17 :Eu 2+ ;
the A element is Si, the D element is N, and the R element is Ce;
0.1≤a≤0.5; 5.5≤x≤6.5, preferably x=6; 10.5≤y≤11.5, preferably y=11; and
the lutetium nitride-based phosphor has a peak wavelength of excitation spectrum at 400 to 460 nm, and can emit a peak wavelength covering the range between 475 to 540 nm.

Assignees

• Grirem Advanced Mat Co Ltd

Inventors

• Liu Ronghui
• Zhuang Weidong
• Du Fu
• Liu Yuanhong
• Gao Wei
• Zhang Xia
• Xu Huibing
• Yan Chunpei
• Zhang Xiaowei

Classifications

• C09K11/7775

  Germanates · CPC title

• C09K11/7704

  Halogenides (C09K11/7701 takes precedence) · CPC title

• C09K11/62

  containing gallium, indium or thallium · CPC title

• C09K11/77747

  Silicon Nitrides or Silicon Oxynitrides · CPC title

• C09K11/7772

  Halogenides (C09K11/7767 takes precedence) · CPC title