Pattern forming method, under coating agent, and laminate

Patent metadata

Field	Value
Publication number	US-11066571-B2
Application number	US-201716344416-A
Country	US
Kind code	B2
Filing date	May 30, 2017
Priority date	Oct 28, 2016
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

It is an object of the present invention to provide a pattern forming method capable of easily forming a phase-separated structure with high accuracy, even in the case of widening the applicable range of a pattern size. The present invention relates to a pattern forming method comprising: applying an under coating agent onto a substrate, and applying a self-assembly composition for pattern formation to the surface of the substrate, onto which the under coating agent has been applied, and then forming a self-assembly film according to self-assembly phase separation, wherein the self-assembly composition for pattern formation comprises a block copolymer comprising a polymerization unit (a) having at least one selected from a structure represented by a formula (103) and a structure represented by a formula (104), and a polymerization unit (b) having a structure represented by a formula (105).

First claim

The invention claimed is:

1. A pattern forming method comprising:
applying an under coating agent onto a substrate, and
applying a self-assembly composition for pattern formation to the surface of the substrate, onto which the under coating agent has been applied, and then forming a self-assembly film according to self-assembly phase separation, wherein
the self-assembly composition for pattern formation comprises a block copolymer comprising a polymerization unit (a) having at least one selected from a structure represented by the following formula ( 103 ) and a structure represented by the following formula ( 104 ), and a polymerization unit (b) having a structure represented by the following formula ( 105 ), and
the content rate of a sugar moiety in the block copolymer is 3% by mass or more and 80% by mass or less, based on the total mass of the block copolymer:

wherein, in the formulae ( 103 ) and ( 104 ), R 1 each independently represents a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, an alkyl group, an acyl group, an aryl group, or a phosphoryl group, and a plurality of R 1 is identical to or different from one another; R 5 represents a hydrogen atom or an alkyl group, and a plurality of R 5 is identical to or different from one another; X 1 and Y 1 each independently represent a single bond or a linking group, a plurality of X 1 is identical to or different from one another, and a plurality of Y 1 is identical to or different from one another; p represents an integer of 2 or more and 3000 or less, r represents an integer of 0 or more, and at least one of a plurality of r represents an integer of 1 or more; and the symbol * represents a binding site with any one of R 1 , or a binding site with any one oxygen atom to which R 1 binds, instead of R 1 , when r represents 2 or more; and
in the formula ( 105 ), W 1 represents a carbon atom or a silicon atom, and a plurality of W 1 is identical to or different from one another; W 2 represents —CR 2 —, —O—, —S—, or —SiR 2 — (provided that R represents a hydrogen atom or an alkyl group containing 1 to 5 carbon atoms, and a plurality of R is identical to or different from one another), and a plurality of W 2 is identical to or different from one another; R 11 represents a hydrogen atom, a methyl group, or a hydroxyl group, and a plurality of R 11 is identical to or different from one another; R 12 represents a hydrogen atom, a hydroxyl group, an acetyl group, a methoxycarbonyl group, an aryl group, or a pyridyl group, and a plurality of R 12 is identical to or different from one another; and q represents an integer of 2 or more and 3000 or less.

2. The pattern forming method according to claim 1 , wherein the under coating agent comprises a polymer containing at least one selected from a (meth)acrylate-derived unit optionally having a substituent and a styrene-derived unit optionally having a substituent.

3. The pattern forming method according to claim 1 , wherein the under coating agent comprises a polymer containing at least one selected from structures represented by the following formulae ( 203 ) to ( 206 ):

wherein, in the formulae ( 203 ) and ( 204 ), L 1 represents —O—, —S—, —NH—, —O—(CH 2 ) n —O—, or —O—(CH 2 ) n —N—(C═O)—N—, provided that n represents an integer of 1 or more and 10 or less; R 1 each independently represents a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, an alkyl group, an acyl group, an aryl group, or a phosphoryl group, and a plurality of R 1 is identical to or different from one another; R 5 represents a hydrogen atom or an alkyl group; r represents an integer of 1 or more, and the symbol * represents a binding site with any one of R 1 , or a binding site with any one oxygen atom to which R 1 binds, instead of R 1 , when r represents 2 or more;
in the formula ( 205 ), R 5 represents a hydrogen atom or an alkyl group, R 50 represents an organic group or a hydroxyl group, and n represents an integer of 0 to 5; and
in the formula ( 206 ), R 5 represents a hydrogen atom or an alkyl group, and R 60 represents an alkyl group.

4. The pattern forming method according to any claim 1 , which further comprises an etching step, after completion of the forming the self-assembly film.

5. The pattern forming method according to claim 4 , wherein the etching step is a dry etching step.

6. The pattern forming method according to claim 4 , wherein the etching step is a wet etching step.

Assignees

• Oji Holdings Corp

Inventors

• Morita Kazuyo
• Hattori Kimiko

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• C08F212/08

  Styrene · CPC title

• B05D7/24

  for applying particular liquids or other fluent materials · CPC title

• C09D133/14 Primary

  of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen · CPC title