Imaging systems and methods for reducing dark signal non-uniformity across pixels

US11064141B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11064141-B2
Application numberUS-201916661083-A
CountryUS
Kind codeB2
Filing dateOct 23, 2019
Priority dateJul 24, 2019
Publication dateJul 13, 2021
Grant dateJul 13, 2021

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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An image sensor may include an array of image pixels. Control circuitry coupled to the array of pixels may be configured to operate the image pixels in an overflow mode of operation, in which each pixel generates an overflow image signal and a complete image signal from a single exposure time period. The overflow image signals and the complete image signals from the pixels may be used to generate a high dynamic range image. While the floating diffusion region in each pixel is not in use, control circuitry may control that pixel to generate a reference signal at the floating diffusion region indicative of pixel-specific dark signal noise. Processing circuitry may mitigate for dark signal non-uniformity across the pixels by correcting the complete image signals using the reference signal to remove dark signal noise in the complete image signals.

First claim

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What is claimed is: 1. An imaging system, comprising: an array of image pixels, wherein an image pixel in the array of image pixels includes a photosensitive element, a charge storage region, and a transfer transistor interposed between the photosensitive element and the charge storage region; control circuitry coupled to the array of image pixels and operable to control the image pixel to generate an image signal in an overflow mode of operation and to control the image pixel to generate a reference signal at the charge storage region by isolating the charge storage region from the photosensitive element for a time period, during which the reference signal is generated; and processing circuitry operable to correct for a dark signal noise in the image signal based on the reference signal. 2. The imaging system defined in claim 1 , wherein the control circuitry is operable to control the image pixel to generate an additional image signal in the overflow mode of operation, and the image signal and the additional image signal are generated based on a single integration time period. 3. The imaging system defined in claim 2 , wherein the control circuitry is operable to control readout circuitry to perform a readout operation for the additional image signal prior to a readout operation for the image signal. 4. The imaging system defined in claim 3 , wherein the processing circuitry is operable to generate a high dynamic range image based on the additional image signal and the image signal. 5. The imaging system defined in claim 3 , wherein the processing circuitry is operable to correct for the dark signal noise based on a comparison of the additional image signal with a threshold level. 6. The imaging system defined in claim 1 , wherein the image signal is generated during an additional time period, and wherein the processing circuitry is operable to correct for the dark signal noise based on a ratio between a duration of the time period and a duration of the additional time period. 7. The imaging system defined in claim 6 , wherein the processing circuitry is operable to correct for the dark signal noise by multiplying the reference signal by the ratio and subtracting the ratio-multiplied reference signal from the image signal. 8. The imaging system defined in claim 1 , wherein the reference signal is generated before the image signal is generated, and the reference signal is stored at a frame buffer. 9. The imaging system defined in claim 1 , wherein the reference signal is generated after the image signal is generated, the imaging system further comprising: readout circuitry coupled to the array of image pixels and operable to perform a readout operation for the image signal and a readout operation for a reset level signal after the readout operation for the image signal. 10. The imaging system defined in claim 9 , wherein the readout circuitry is operable to perform a readout operation for the reference signal, and the readout operations for the reset level signal and the reference signal form a correlated double sampling readout. 11. The imaging system defined in claim 10 , wherein the readout circuitry is operable to perform readout operations for an additional reset level signal and an additional image signal before the readout operation for the image signal, and wherein the additional image signal and the image signal are generated based on a single integration time period. 12. The imaging system defined in claim 1 , wherein the charge storage region comprises a floating diffusion region. 13. The imaging system defined in claim 12 , wherein the control circuitry is operable to control the image pixel to generate the reference signal further by resetting the floating diffusion region to a reset voltage level before isolating the floating diffusion region for the time period. 14. A method of generating image signals using an image pixel, the method comprising: with a transistor and a photosensitive element coupled to a first terminal of the transistor, generating first and second image signals in an overflow mode of operation based on a first integration time period; at the photosensitive element, generating a third image signal in a linear mode of operation based on a second integration time period; and at a floating diffusion region coupled to a second terminal of the transistor, generating a reference signal for correcting a dark current noise while generating the third image signal at the photosensitive element. 15. The method defined in claim 14 , wherein the first image signal is an overflow image signal, the second image signal is a complete image signal, and the overflow image signal and the complete image signal are useable to construct a high dynamic range image. 16. The method defined in claim 15 , further comprising: modifying the complete image signal based on the reference signal to correct for a noise component in the complete image signal. 17. A method of generating an image signal using an image pixel, the method comprising: resetting a charge storage region to a reference voltage at a first time; after resetting the charge storage region, preventing charge from a photosensitive element from overflowing to the charge storage region; at a second time, performing a readout operation on a reference signal generated at the charge storage region, wherein the reference signal is generated between the first time and the second time and is indicative of a pixel-specific dark signal noise; and after performing the readout operation on the reference signal, generating the image signal in an overflow mode of operation. 18. The method defined in claim 17 , further comprising: subtracting a modified version of the reference signal from the image signal to compensate for the pixel-specific dark signal noise. 19. The method defined in claim 18 , wherein performing the readout operation on the reference signal comprises storing the reference signal at a frame buffer.

Assignees

Inventors

Classifications

  • H04N25/57Primary

    Control of the dynamic range · CPC title

  • H04N25/59Primary

    by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance · CPC title

  • by using reference sources · CPC title

  • comprising storage means other than floating diffusion · CPC title

  • Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters · CPC title

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What does patent US11064141B2 cover?
An image sensor may include an array of image pixels. Control circuitry coupled to the array of pixels may be configured to operate the image pixels in an overflow mode of operation, in which each pixel generates an overflow image signal and a complete image signal from a single exposure time period. The overflow image signals and the complete image signals from the pixels may be used to genera…
Who is the assignee on this patent?
Semiconductor Components Ind Llc
What technology area does this patent fall under?
Primary CPC classification H04N25/57. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 13 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).