Polarity patterned piezoelectric film

Patent metadata

Field	Value
Publication number	US-11063572-B2
Application number	US-201715843863-A
Country	US
Kind code	B2
Filing date	Dec 15, 2017
Priority date	Dec 15, 2016
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

A piezoelectric device includes a foundation structure and a plurality of metal islands distributed over a first area of a top surface of the foundation structure. A piezoelectric film resides over the foundation structure and is formed from a piezoelectric material. The piezoelectric film has a non-piezoelectric portion over the first area and a piezoelectric portion over a second area of the top surface of the foundation structure. Within the non-piezoelectric portion, the piezoelectric film is polarity patterned to have pillars and a mesh. The pillars of the piezoelectric material have a first polar orientation residing over corresponding ones of the plurality of metal islands. The mesh of the piezoelectric material has a second polar orientation, which is opposite that of the first polar orientation, and surrounds the pillars. In one embodiment, the metal islands are self-assembled islands.

First claim

What is claimed is:

1. A device comprising:
a foundation structure;
a plurality of metal islands distributed over a first area of a top surface of the foundation structure; and
a piezoelectric film over the foundation structure and formed from a piezoelectric material, wherein:
the piezoelectric film has at least one non-piezoelectric portion over the first area and at least one piezoelectric portion over a second area of the top surface of the foundation structure; and
within the at least one non-piezoelectric portion, the piezoelectric film is polarity patterned to comprise:
pillars of the piezoelectric material having a first polar orientation residing over corresponding ones of the plurality of metal islands; and
a mesh of the piezoelectric material having a second polar orientation, which is opposite that of the first polar orientation, and surrounding the pillars.

2. The device of claim 1 wherein the plurality of metal islands are self-assembled islands.

3. The device of claim 2 wherein the piezoelectric material is formed from a compound comprising a metal element and a non-metal element, and the self-assembled islands consist essentially of the metal element.

4. The device of claim 3 wherein the metal element is a group III element, and the non-metal element is a group V element.

5. The device of claim 2 wherein the piezoelectric material is formed from a compound comprising a metal element and a non-metal element, and the self-assembled islands are essentially void of the non-metal element.

6. The device of claim 3 wherein the metal element is a group III element, and the non-metal element is a group V element.

7. The device of claim 1 wherein the piezoelectric material is one of a group consisting of AN, ScAlN, GaN, InN, BN, ErAlN, MgHfAlN, MgZrAlN, and TiAlN, and the plurality of metal islands consist essentially of one of a group consisting of Al, ScAl, Pt, Ti, and Ru.

8. The device of claim 1 wherein within the at least one piezoelectric portion of the piezoelectric film, the piezoelectric material has the second polar orientation and is not polarity patterned.

9. The device of claim 1 further comprising a bottom electrode over the foundation structure and a top electrode over the bottom electrode, wherein the at least one piezoelectric portion is provided in an active region between the bottom electrode and the top electrode.

10. The device of claim 9 wherein the at least one non-piezoelectric portion is provided in an outside region at least partially surrounding the active region.

11. The device of claim 1 further comprising a base layer of the piezoelectric material between the at least one non-piezoelectric portion and the foundation structure, wherein the plurality of metal islands are over and directly on the base layer.

12. The device of claim 1 further comprising:
a bottom electrode over the foundation structure;
a base layer of the piezoelectric material over the bottom electrode and having the second polar orientation, wherein the plurality of metal islands are over the base layer; and
a top electrode over the at least one non-piezoelectric portion, wherein the at least one non-piezoelectric portion is over the base layer, and the at least one non-piezoelectric portion and the base layer are between the bottom electrode and the top electrode.

13. The device of claim 1 further comprising:
a first bottom electrode over the foundation structure;
a first top electrode over the first bottom electrode, wherein the at least one piezoelectric portion is between the first bottom electrode and the first top electrode;
a second bottom electrode over the foundation structure;
a base layer of the piezoelectric material over the second bottom electrode and having the second polar orientation, wherein the plurality of metal islands are on the base layer; and
a second top electrode over the base layer, wherein the at least one non-piezoelectric portion and the base layer are between the second bottom electrode and the second top electrode.

14. The device of claim 13 wherein:
the first bottom electrode and the first top electrode form part of a first transducer for a first bulk acoustic wave resonator; and
the second bottom electrode and the second top electrode form part of a second transducer for a second bulk acoustic wave resonator.

15. The device of claim 1 wherein the plurality of metal islands on average have a thickness of less than 20 nanometers and a largest width dimension of less than five micrometers.

16. The device of claim 1 wherein the plurality of metal islands on average have a largest width dimension of less than 30 micrometers.

17. The device of claim 1 wherein the piezoelectric material is one of aluminum nitride and scandium aluminum nitride and the plurality of metal islands are self-assembled and comprise aluminum.

18. A device comprising:
a foundation structure;
a plurality of metal islands distributed over a first area of a top surface of the foundation structure; and
a piezoelectric film over the foundation structure and formed from a piezoelectric material, wherein:
the piezoelectric film has at least one non-piezoelectric portion over the first area; and
within the at least one non-piezoelectric portion, the piezoelectric film is polarity patterned to comprise:
pillars of the piezoelectric material having a first polar orientation residing over corresponding ones of the plurality of metal islands; and
a mesh of the piezoelectric material having a second polar orientation, which is opposite that of the first polar orientation, and surrounding the pillars.

Assignees

• Qorvo Us Inc

Inventors

• Sadhu Jyothi Swaroop
• Wang Maria

Classifications

• H03H3/02 Primary

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H9/02015

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H2003/025

  the resonators or networks comprising an acoustic mirror · CPC title

• H03H9/0211 Primary

  of reflections · CPC title

• H03H2003/023

  the resonators or networks being of the membrane type · CPC title