Power semiconductor module and power converter

Patent metadata

Field	Value
Publication number	US-11063422-B2
Application number	US-201816137655-A
Country	US
Kind code	B2
Filing date	Sep 21, 2018
Priority date	Nov 22, 2017
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

A power semiconductor module includes a power semiconductor element; a control circuit which controls the power semiconductor element; and multiple terminals. The control circuit deactivates a gate terminal, which is a control electrode of the power semiconductor element, in an event of a fault in the power semiconductor element or the power semiconductor module, and outputs from a first output terminal a fault signal indicating the event of the fault in the power semiconductor module. When there is no fault in the power semiconductor element and the power semiconductor module, the control circuit uses the first output terminal for other applications such as for outputting temperature information on the power semiconductor module, for example. This allows the fault signal to be output without increasing the number of terminals of the power semiconductor module more than necessary.

First claim

What is claimed is:

1. A power semiconductor module, comprising:
a power semiconductor element;
a control circuit configured to control the power semiconductor element; and
a first terminal which is an input terminal for applying a pulse-width modulation signal to the power semiconductor element, wherein
in an event of a fault in the power semiconductor element or the power semiconductor module, the control circuit deactivates a control electrode of the power semiconductor element, and outputs a fault signal indicating the event of the fault in the power semiconductor module from the first terminal, the fault signal is configured to have, at a time of informing a fault, a polarity matching an inactivated state of the pulse-width modulation signal; and
when there is no fault in the power semiconductor element and the power semiconductor module, the control circuit uses the first terminal for other applications.

2. The power semiconductor module according to claim 1 , wherein
the fault signal output from the control circuit through the first terminal has a signal width longer than a duration of the control electrode of the power semiconductor element being deactivated by the control circuit.

3. The power semiconductor module according to claim 1 , wherein
the fault signal output from the control circuit through the first terminal has a signal width shorter than a duration of the control electrode of the power semiconductor element being deactivated by the control circuit.

4. A power converter comprising:
a primary conversion circuit having the power semiconductor module according to claim 1 and configured to convert input power; and
a control circuit configured to output to the primary conversion circuit a control signal which controls the primary conversion circuit.

5. A power converter comprising:
a primary conversion circuit having the power semiconductor module according to claim 2 and configured to convert input power; and
a control circuit configured to output to the primary conversion circuit a control signal which controls the primary conversion circuit.

6. A power converter comprising:
a primary conversion circuit having the power semiconductor module according to claim 3 and configured to convert input power; and
a control circuit configured to output to the primary conversion circuit a control signal which controls the primary conversion circuit.

7. A power semiconductor module, comprising:
a power semiconductor element;
a control circuit configured to control the power semiconductor element; and
a first terminal, wherein
in an event of a fault in the power semiconductor element or the power semiconductor module, the control circuit deactivates a control electrode of the power semiconductor element, and outputs a fault signal indicating the event of the fault in the power semiconductor module from the first terminal; and
when there is no fault in the power semiconductor element and the power semiconductor module, the control circuit uses the first terminal as an output terminal of an operational amplifier, wherein
a voltage of the first terminal is outside an output voltage range of the operational amplifier when the fault signal is output from the first terminal.

8. The power semiconductor module according to claim 7 , wherein
the fault signal output from the control circuit through the first terminal has a signal width longer than a duration of the control electrode of the power semiconductor element being deactivated by the control circuit.

9. The power semiconductor module according to claim 7 , wherein
the fault signal output from the control circuit through the first terminal has a signal width shorter than a duration of the control electrode of the power semiconductor element being deactivated by the control circuit.

10. A power converter comprising:
a primary conversion circuit having the power semiconductor module according to claim 7 and configured to convert input power; and
a control circuit configured to output to the primary conversion circuit a control signal which controls the primary conversion circuit.

11. A power converter comprising:
a primary conversion circuit having the power semiconductor module according to claim 8 and configured to convert input power; and
a control circuit configured to output to the primary conversion circuit a control signal which controls the primary conversion circuit.

12. A power converter comprising:
a primary conversion circuit having the power semiconductor module according to claim 9 and configured to convert input power; and
a control circuit configured to output to the primary conversion circuit a control signal which controls the primary conversion circuit.

Assignees

• Mitsubishi Electric Corp

Inventors

• Ichimura Toru

Classifications

• H02M1/32 Primary

  Means for protecting converters other than automatic disconnection · CPC title

• H02P29/024

  Detecting a fault condition, e.g. short circuit, locked rotor, open circuit or loss of load · CPC title

• H02M1/08

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

• H02P27/06

  using DC to AC converters or inverters (H02P27/05 takes precedence) · CPC title

• H03K2217/0027

  Measuring means of, e.g. currents through or voltages across the switch · CPC title