Capacitor structures

Patent metadata

Field	Value
Publication number	US-11063034-B2
Application number	US-201916454908-A
Country	US
Kind code	B2
Filing date	Jun 27, 2019
Priority date	Jun 27, 2019
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

Capacitor structures including a first island of a first conductive region and a second island of the first conductive region having a first conductivity type, an island of a second conductive region having a second conductivity type different than the first conductivity type, a dielectric overlying the first island of the first conductive region, a conductor overlying the dielectric, and a terminal of a diode overlying the second island of the first conductive region and overlying the island of the second conductive region.

First claim

What is claimed is:

1. A capacitor structure, comprising:
a first conductive region having a first conductivity type;
a second conductive region having a second conductivity type different than the first conductivity type;
trenches formed in the first conductive region and in the second conductive region and defining a first island of the first conductive region and a second island of the first conductive region, and defining an island of the second conductive region;
a dielectric overlying the first island of the first conductive region;
a conductor overlying the dielectric; and
a terminal of a diode overlying the second island of the first conductive region and overlying the island of the second conductive region;
wherein the island of the second conductive region is adjacent to the second island of the first conductive region in a direction that is orthogonal to a direction extending from the second island of the first conductive region to the terminal of the diode; and
wherein the second island of the first conductive region is between the first island of the first conductive region and the island of the second conductive region.

2. A capacitor structure, comprising:
a first conductive region having a first conductivity type;
a second conductive region having a second conductivity type different than the first conductivity type;
trenches formed in the first conductive region and in the second conductive region and defining a first, island of the first conductive region and a second island of the first conductive region, and defining an island of the Second conductive region;
a dielectric overlaying the first island of the first conductive region;
a conductor overlying the dielectric; and
a terminal of a diode overlying the second island of the first conductive region and overlying the island of the second conductive region;
wherein e the island of the second conductive region is adjacent to the second island of the first conductive region in a direction that is orthogonal to a direction extending from the second island of the conductive region to the terminal of the diode; and
wherein the first conductive region comprises a region of n-type conductively doped monocrystalline silicon and the conductor comprises an n-type conductively doped polysilicon.

3. The capacitor structure of claim 2 , wherein the terminal of the diode comprises an n-type conductively doped silicon material.

4. The capacitor structure of claim 3 , wherein the n-type conductively doped silicon material is selected from a group consisting of an n-type conductively doped monocrystalline silicon and an n-type conductively doped polysilicon.

5. A capacitor structure, comprising:
a first island of a first conductive region and a second island of the first conductive region having a first conductivity type, wherein the first conductive region is a continuous conductive region having the first conductivity type;
an island of a second conductive region having a second conductivity type different than the first conductivity type;
a dielectric overlying the first island of the first conductive region;
a conductor overlying the dielectric; and
a terminal of a diode overlying the second island of the first conductive region and overlying the island of the second conductive region;
wherein the island of the second conductive region is adjacent to the second island of the first conductive region in a direction that is orthogonal to a direction extending from the second island of the first conductive region to the terminal of the diode; and
wherein the conductor is a first conductor, and wherein terminal of the diode comprises a second conductor formed concurrently with the first conductor.

6. The capacitor structure of claim 5 , wherein the dielectric is a first dielectric, and wherein a second dielectric formed concurrently with the first dielectric is between the terminal of the diode and the second island of the first conductive region, and between the terminal of the diode and the island of the second conductive region.

7. A capacitor structure, comprising:
a first conductive region having a first conductivity type;
a second conductive region having a second conductivity type different than the first conductivity type;
trenches formed in the first conductive region and in the second conductive region and defining a first island of the first conductive region and a second island of the first conductive region, and defining an island of the second conductive region;
a dielectric overlying the first island of the first conductive region;
a conductor overlying the dielectric; and
a terminal of a diode overlying the second island of the first conductive region and overlying the island of the second conductive region;
wherein the island of the second conductive region is adjacent to the second island of the first conductive region in a direction that is orthogonal to a direction extending from the second island of the first conductive region to the terminal of the diode; and
wherein the first conductive region is a region of n-type conductively doped monocrystalline silicon and the conductor is a p-type conductively doped polysilicon.

8. A capacitor structure, comprising:
a first conductive region having a first conductivity type;
a second conductive region having a second conductivity type different than the first conductivity type;
trenches formed in the first conductive region and in the second conductive region and defining a first island of the first conductive region and a second island of the first conductive region, and defining an island of the second conductive region;
a dielectric overlying the first island of the first conductive region;
a conductor overlying the dielectric; and
a terminal of a diode overlying the second island of the first conductive region and overlying the island of the second conductive region;
wherein the island of the second conductive region is adjacent to the second island of the first conductive region in a direction that is orthogonal to a direction extending from the second island of the first conductive region to the terminal of the diode; and
wherein the dielectric comprises a thermal oxide of the first island of the first conductive region.

9. A capacitor structure, comprising:
a first island of a first conductive region and a second island of the first conductive region having a first conductivity type;
an island of a second conductive region having a second conductivity type different than the first conductivity type;
a dielectric overlying the first island of the first conductive region;
a conductor overlying the dielectric; and
a terminal of a diode overlying the second island of the first conductive region and overlying the island of the second conductive region;
wherein the diode is a Zener diode selected from a group consisting of a Zener diode formed between the terminal of the diode and the second island of the first conductive region and a Zener diode formed between the terminal of the diode and the island of the second conductive region.

10. The capacitor structure of claim 9 , wherein a Zener voltage of the Zener diode is in a range of 3-7V.

11. A capacitor structure, comprising:
a first island of a first conductive region and a second island of the first conductive region having a first conductivity type, wherein the first conductive region is a continuous conductive region having the first conductivity type;
an island of a second conductive region having a second conductivity type different than the first conductivity type;
a dielectric overlying the first island of the first conductive region;
a conductor overlying th

Assignees

• Micron Technology Inc

Inventors

• Mikhalev Vladimir
• Violette Michael

Classifications

• H10W42/80

  protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H10W42/60

  protecting against electrostatic charges or discharges, e.g. Faraday shields (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H10D8/25

  Zener diodes · CPC title

• H10D1/68 Primary

  Capacitors having no potential barriers · CPC title

• H10D89/921

  characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses · CPC title