Semiconductor module and power conversion device

Patent metadata

Field	Value
Publication number	US-11063025-B2
Application number	US-201816632029-A
Country	US
Kind code	B2
Filing date	Aug 27, 2018
Priority date	Sep 4, 2017
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.

First claim

The invention claimed is:

1. A semiconductor module having a plurality of semiconductor switching elements that operate in parallel, the semiconductor module comprising:
an insulating substrate on which the plurality of semiconductor switching elements are mounted, a main electrode control pattern and a control electrode control pattern being provided on the insulating substrate to be common to the plurality of semiconductor switching elements, each of the main electrode control pattern and the control electrode control pattern being electrically connected to a drive circuit for the plurality of semiconductor switching elements;
respective main electrode pads and respective first wires provided to correspond to the plurality of semiconductor switching elements, the main electrode pads being electrically connected to main electrodes of the semiconductor switching elements, the first wires electrically connecting the main electrode pads to the main electrode control pattern; and
respective control electrode pads and respective second wires provided to correspond to the plurality of semiconductor switching elements, the control electrode pads being electrically connected to control electrodes of the semiconductor switching elements, the second wires electrically connecting the control electrode pads to the control electrode control pattern, wherein
a wiring inductance of a second path formed to extend through the second wires and the control electrode control pattern between the control electrode pads of the plurality of semiconductor switching elements is larger than a wiring inductance of a first path formed to extend through the first wires and the main electrode control pattern between the main electrode pads of the plurality of semiconductor switching elements, and
a width of the control electrode control pattern is smaller than a width of the main electrode control pattern.

2. The semiconductor module according to claim 1 , wherein on the insulating substrate, the control electrode control pattern is disposed to interpose the main electrode control pattern between the control electrode control pattern and a region in which the plurality of semiconductor switching elements are disposed.

3. The semiconductor module according to claim 1 , wherein
the control electrode control pattern is mounted on an insulating substrate different from the insulating substrate on which the semiconductor switching elements and the main electrode pads are mounted, and
the second wires electrically connect the control electrode control pattern mounted on the different insulating substrate to the control electrode pads.

4. The semiconductor module according to claim 1 wherein the width of the control electrode control pattern is smaller than the width of the main electrode control pattern at a location to which the second wires are connected.

5. The semiconductor module according to claim 1 , wherein a cross sectional area of each of the second wires is smaller than a cross sectional area of each of the first wires.

6. The semiconductor module according to claim 1 , wherein
a plurality of the control electrode control patterns are provided on one or a plurality of the insulating substrates, and
the plurality of the control electrode control patterns are electrically connected to each other by a pattern connecting wire.

7. The semiconductor module according to claim 6 , wherein
2n or (2n+1) semiconductor switching elements are provided as the plurality of semiconductor switching elements, where n is a natural number,
the plurality of the control electrode control patterns include
a first control electrode control pattern connected to the control electrode pads of the 2n or (2n+1) semiconductor switching elements by the second wires, and
a second control electrode control pattern connected to the first control electrode control pattern by the pattern connecting wire, and

a first connection location for the pattern connecting wire in the first control electrode control pattern is positioned to provide, from the plurality of semiconductor switching elements, n sets of semiconductor switching elements for which distances between the first connection location and respective second connection locations for the second wires in the first control electrode control pattern are equal to each other.

8. The semiconductor module according to claim 1 , wherein
the plurality of semiconductor switching elements are distributed and mounted on a plurality of the insulating substrates,
the control electrode control pattern and the main electrode control pattern are provided on each of the insulating substrates to be common to the semiconductor switching elements mounted on the each of the insulating substrates, and
on the each of the insulating substrates, the first and second wires are provided to correspond to the respective semiconductor switching elements mounted on the each of the insulating substrates,
the semiconductor module further comprising:
a third wire that electrically connects the main electrode control patterns to each other between the plurality of the insulating substrates; and
a fourth wire that electrically connects the control electrode control patterns to each other between the plurality of the insulating substrates, wherein
the plurality of semiconductor switching elements have first and second semiconductor switching elements respectively mounted on first and second insulating substrates of the plurality of insulating substrates, a third path is formed to extend through the first and third wires and the main electrode control patterns of the first and second insulating substrates between the main electrode pads of the first and second semiconductor switching elements, a fourth path is formed to extend through the second and fourth wires and the control electrode control patterns of the first and second insulating substrates between the control electrode pads of the first and second semiconductor switching elements, and a wiring inductance of the fourth path is larger than a wiring inductance of the third path.

9. The semiconductor module according to claim 1 , wherein the number of the first wires is larger than the number of the second wires.

10. The semiconductor module according to claim 1 , further comprising a fifth wire that directly electrically connects between the main electrode pads of the plurality of semiconductor switching elements.

11. The semiconductor module according to claim 1 , wherein each of the second wires is coated with a magnetic substance or is composed of a material including the magnetic substance.

12. The semiconductor module according to claim 1 , wherein each of the semiconductor switching elements is composed of a wide band gap semiconductor.

13. A power conversion device comprising:
a main conversion circuit that has the power semiconductor module recited in claim 1 and that converts received power and outputs the converted power, and
a control circuit that outputs a control signal to the main conversion circuit so as to control the main conversion circuit.

14. A semiconductor module having a plurality of semiconductor switching elements that operate in parallel, the semiconductor module comprising:
an insulating substrate on which the plurality of semiconductor switching elements are mounted, a main electrode control pattern and a control electrode control pattern being provided on the insulating substrate to be common to the plurality of semiconductor switching elements, each of the main electrode control pattern and the control electrode control pattern being electrically connected to a drive ci

Assignees

• Mitsubishi Electric Corp

Inventors

• Nakashima Junichi
• Morisaki Shota
• TAMADA Yoshiko
• Nakayama Yasushi
• Negishi Tetsu
• Tsuda Ryo
• Hayashida Yukimasa
• Date Ryutaro

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W44/501

  Inductive arrangements (H10W44/20 takes precedence) · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/07554

  changes in dispositions · CPC title