Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

Patent metadata

Field	Value
Publication number	US-11062940-B2
Application number	US-201916442936-A
Country	US
Kind code	B2
Filing date	Jun 17, 2019
Priority date	Oct 7, 2016
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming a barrier conductive layer by providing an organometallic precursor on a semiconductor substrate, the organometallic precursor being represented by the following Chemical Formula 2,

wherein R1, R2, R3 and R4 are each independently one of a hydrogen atom, a halogen atom and an alkyl group of C1 to C7; and
forming a metal layer on the barrier conductive layer.

2. The method of claim 1 , wherein the forming the barrier conductive layer includes providing a nitrogen-containing gas over the semiconductor substrate during the providing the organometallic precursor, and
the forming the forming the barrier conductive layer includes forming the barrier conductive layer as a tungsten nitride layer.

3. The method of claim 2 , wherein the forming the metal layer includes providing the organometallic precursor on the barrier conductive layer, and
the metal layer includes a tungsten layer.

4. The method of claim 3 , wherein the forming the metal layer includes providing the organometallic precursor on the barrier conductive layer with a hydrogen gas.

5. The method of claim 2 , wherein the nitrogen-containing gas includes at least one of ammonia (NH 3 ), nitrogen dioxide (NO 2 ) and nitrous oxide (N 2 O).

6. The method of claim 1 , wherein the organometallic precursor is represented by the following Chemical Formula 2-1:

7. The method of claim 1 , wherein the organometallic precursor is provided with a carrier gas including an inactive gas.

8. The method of claim 7 , wherein the inactive gas includes at least one of argon (Ar), helium (He), krypton (Kr) and xenon (Xe).

9. The method of claim 1 , wherein a chamber temperature for forming the barrier conductive layer is about 200° C. to about 600° C.

10. The method of claim 1 , wherein a chamber temperature for forming the barrier conductive layer is about 200° C. to about 400° C.

11. The method of claim 1 , wherein the barrier conductive layer includes a metal atomic layer and a reaction material layer, which are alternately deposited.

12. The method of claim 11 , wherein the reaction material layer is a nitrogen atomic layer.

13. The method of claim 1 , wherein the barrier conductive layer includes at least one of tungsten nitride, tungsten carbide and tungsten carbonitride.

14. The method of claim 1 , wherein the semiconductor substrate includes a silicon substrate, a germanium substrate, a silicon-germanium substrate, an SOI substrate or a GOI substrate.

15. The method of claim 1 , wherein the semiconductor substrate includes an opening, and the barrier conductive layer has a substantially uniform thickness in the opening, and the metal layer is formed to fill the opening.

16. The method of claim 15 , further comprising partially removing the barrier conductive layer and the metal layer for planarization.

17. The method of claim 1 , wherein the metal layer includes at least one of tungsten, aluminum, copper, titanium and tantalum.

18. The method of claim 1 , wherein the barrier conductive layer includes tungsten carbide.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Sun Chang-Woo
• Yun Ji-Eun
• Lim Jae-Soon
• Cho Youn-Joung
• Kim Myong-Woon
• Lee Kang-Yong
• Lee Sang-Ick
• Cho Sung-Woo

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/032 Primary

  of conductive barrier, adhesion or liner layers · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• H10D1/692

  Electrodes · CPC title