Heterostructure system and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-11062902-B2
Application number	US-201716325410-A
Country	US
Kind code	B2
Filing date	Aug 16, 2017
Priority date	Aug 16, 2016
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

A method of fabricating a heterostructure system, comprises epitaxially growing a crystalline layer of a first substance on a crystalline base layer by surface catalysis in a solution, wherein the growth is self-terminated once a monolayer of the substance is formed on the base layer.

First claim

What is claimed is:

1. A method of fabricating a heterostructure system, comprising:
epitaxially growing a crystalline layer of a first substance on a crystalline base layer by surface catalysis in a solution, wherein said growth is self-terminated once a monolayer of said first substance is formed on said base layer; and
epitaxially growing an additional crystalline layer of a second substance on said monolayer, thereby forming a heterostructure system comprising said base layer, said monolayer and said additional layer.

2. The method according to claim 1 , wherein an interface between said layer of said first substance and said base layer constitutes both electrons and holes.

3. The method according to claim 1 , wherein said crystalline base layer is made of an electrically insulating material.

4. The method according to claim 1 , wherein said crystalline layer of said first substance forms a half unit cell with a surface of said crystalline base layer on which said crystalline layer of said first substance layer is grown.

5. The method according to claim 1 , wherein said crystalline layer of said first substance forms a perovskite crystal structure with a surface of said crystalline base layer on which said crystalline layer of said first substance is grown.

6. The method according to claim 5 , wherein said perovskite structure is an oxide.

7. The method according to claim 1 , wherein said first substance comprises an element selected from the group consisting of barium, strontium, calcium, magnesium, zinc, titanium, aluminum, zirconium, hafnium, tantalum, vanadium, niobium, manganese, chromium, iron, nickel and cobalt.

8. The method according to claim 1 , wherein said additional layer is made of an electrically insulating material.

9. The method according to claim 1 , wherein both said base layer and said additional layer are oxides.

10. The method according to claim 9 , wherein both said base layer and said additional layer have a perovskite crystal structure.

11. The method according to claim 1 , wherein said crystalline base layer comprises SrTiO 3 , and said additional layer is selected from the group consisting of LaTiO 3 , LaAlO 3 , LaVO 3 , KTaO 3 , GdTiO 3 , LaGaO 3 , PrAlO 3 , NdAlO 3 , NdGaO 3 , GdAlO 3 , Al 2 O 3 , DyScO 3 , CaZrO 3 , MgO, CaO, ZnO, TiO 2 , ZrO 2 , HfO 2 and VO 2 .

12. The method according to claim 1 , wherein said crystalline base layer is SrTiO 3 terminated by TiO 2 .

13. The method according to claim 1 , wherein said additional layer is at least 4 unit cells in thickness.

14. The method according to claim 1 , wherein said crystalline base layer is a non-polar crystalline layer, and wherein said crystalline layer of said first substance is a polarity inversion layer.

15. The method according to claim 1 , wherein said crystalline layer of said first substance is a polarity inversion layer, wherein said crystalline base layer is a non-polar crystalline layer, and wherein said additional crystalline layer is a polar crystalline layer.

16. The method according to claim 1 , wherein said solution is an anhydrous solution.

17. A method of fabricating a heterostructure system, comprising:
epitaxially growing a polarity inversion layer on a non-polar crystalline layer by chemical deposition to form an interface between said non-polar crystalline layer and said polarity inversion layer; and
epitaxially growing a polar crystalline layer on said polarity inversion layer, by a process selected from the group consisting of physical deposition and chemical deposition.

18. The method according to claim 17 , wherein said polar crystalline layer exhibits polarity which is inverted relative to a polarity that would have been exhibited by said polar crystalline layer in the absence of said polarity inversion layer.

19. The method according to claim 17 , wherein said non-polar crystalline layer is made of an electrically insulating material.

20. The method according to claim 17 , wherein said polar crystalline layer is made of an electrically insulating material.

21. The method according to claim 17 , wherein a thickness of said interface is from about 1 to about 6 unit cells of said non-polar crystalline layer.

22. The method according to claim 17 , wherein said polarity inversion layer is a monolayer.

23. The method according to claim 17 , wherein said polarity inversion layer forms a half unit cell with a surface of said non-polar crystalline layer on which said polarity inversion layer is grown.

24. The method according to claim 17 , wherein said polarity inversion layer forms a perovskite crystal structure with a surface of said non-polar crystalline layer on which said polarity inversion layer is grown.

Assignees

• Univ Ramot

Inventors

• Dagan Yoram
• Markovich Gil
• Ron Alon
• Hevroni Amir

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3246

  Monolayers · CPC title

• H10P14/3234 Primary

  being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224) · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/6349 Primary

  Deposition of epitaxial materials · CPC title