Charged particle detector including a light-emitting section having lamination structure, charged particle beam device, and mass spectrometer

Patent metadata

Field	Value
Publication number	US-11062892-B2
Application number	US-201716070790-A
Country	US
Kind code	B2
Filing date	Jan 25, 2017
Priority date	Jan 29, 2016
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

The objective of the present invention is to provide a charged particle detector and a charged particle beam device with which it is possible to acquire a high luminous output while rapidly eliminating charged particles that are incident to a scintillator. In order to achieve said objective the present invention proposes: a charged particle detector provided with a light-emitting unit including a laminated structure obtained by laminating a GaInN-containing layer and a GaN layer, and provided with a conductive layer that is in contact with the GaInN-containing layer on the charged particle incidence surface side of the laminated structure; and a charged particle beam device.

First claim

The invention claimed is:

1. A charged particle detector including a light-emitting section having a lamination structure in which a GaInN-containing layer and a GaN layer are laminated, the charged particle detector comprising:
an electrically conductive layer that is in direct contact with the GaInN-containing layer and that is provided on a charged particle incident face side of the lamination structure, wherein a composition of the GaInN-containing layer is Ga 1-y In y N(0<y<1),
wherein a relationship between a thickness “a” of the GaInN-containing layer and a thickness “b” of the GaN layer is 10≥b/a≥6.

2. The charged particle detector according to claim 1 , wherein
the light-emitting section has a thickness ranging from one-fifth to three-fifths of a penetration distance of a charged particle beam.

3. The charged particle detector according to claim 1 , wherein
a number of a plurality of the GaInN-containing layers is in a range from 5 to 25.

4. The charged particle detector according to claim 1 , wherein
the light-emitting section is formed on a substrate, and protruding structures formed continuously and having a pitch of 10 to 2000 nm and a height of 10 to 20000 nm are formed either between the substrate and the light-emitting section or on the substrate.

5. A charged particle beam device including a detector that detects charged particles obtained on the basis of irradiation with a charged particle beam emitted from a charged particle source, wherein
the detector includes a light-emitting section having a lamination structure in which a GaInN-containing layer and a GaN layer are laminated, and includes an electrically conductive layer that is in direct contact with the GaInN-containing layer and that is provided on a charged particle incident face side of the lamination structure, wherein a composition of the GaInN-containing layer is Ga 1-y In y N(0<y<1), and a relationship between a thickness “a” of the GaInN-containing layer and a thickness “b” of the GaN layer is 10≥b/a≥6.

6. A mass spectrometer including a detector that detects ions subjected to mass separation, wherein comprising:
a mass spectrometer including a detector that detects ions subjected to mass separation,
wherein the detector includes a light-emitting section having a lamination structure in which a GaInN-containing layer and a GaN layer are laminated, and includes an electrically conductive layer that is in direct contact with the GaInN-containing layer and that is provided on a charged particle incident face side of the lamination structure, wherein a composition of the GaInN-containing layer is Ga 1-y In y N(0<y<1)), and a relationship between a thickness “a” of the GaInN-containing layer and a thickness “b” of the GaN layer is 10≥b/a≥6.

7. The charged particle detector according to claim 1 , wherein a thickness “a” of the GaInN-containing layer is 2-4 nm.

8. The charged particle detector according to claim 1 , wherein the lamination structure forms a quantum well structure in which a GaInN-containing layer and a GaN layer are laminated.

9. The charged particle beam device according to claim 5 , wherein the lamination structure forms a quantum well structure in which a GaInN-containing layer and a GaN layer are laminated.

10. The A mass spectrometer according to claim 6 , wherein the lamination structure forms a quantum well structure in which a GaInN-containing layer and a GaN layer are laminated.

Assignees

• Hitachi High Tech Corp

Inventors

• Imamura Shin
• Ohshima Takashi
• Tsuchiya Tomonobu
• Kawano Hajime
• Suzuki Makoto

Classifications

• H01J37/244 Primary

  Detectors; Associated components or circuits therefor · CPC title

• G01T1/24

  with semiconductor detectors · CPC title

• H01J2237/28

  Scanning microscopes · CPC title

• G01T1/20

  with scintillation detectors · CPC title

• H01J2237/2443

  Scintillation detectors · CPC title