Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device
US-9213237-B2 · Dec 15, 2015 · US
US11061329B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11061329-B2 |
| Application number | US-201816173326-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 29, 2018 |
| Priority date | Nov 29, 2017 |
| Publication date | Jul 13, 2021 |
| Grant date | Jul 13, 2021 |
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A resist composition including a resin component having a structural unit derived form a compound represented by formula (a0-1) (in the formula, W represents a polymerizable group-containing group; Ra01 is a group which is bonded to Ra03 to form an aliphatic cyclic group, or bonded to Ra04 to form an aliphatic cyclic group;Ra02 represents a hydrocarbon group which may have a substituent; Ra03 is a hydrogen atom or a monovalent organic group in the case where Ra01 is not bonded thereto; Ra04 is a hydrogen atom or a monovalent organic group in the case where Ra01 is not bonded thereto; and Ra05 to Ra07 each independently represents a hydrogen atom or a monovalent organic group).
Opening claim text (preview).
What is claimed is: 1. A compound represented by general formula (a0-1-1) or (a0-1-2) shown below: wherein, in formula (a0-1-1), R α represents a hydrogen atom, a methyl group or a trifluoromethyl group; Va 0 represents a linear or branched alkylene group which may have an ether bond; n a0 represents an integer of 0 to 2; n a011 represents an integer of 1 to 4; Ra 02 represents a hydrocarbon group which may have a substituent; Ra 030 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; Ra 050 to Ra 070 each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; in formula (a0-1-2), R α represents a hydrogen atom, a methyl group or a trifluoromethyl group; Va 0 represents a linear or branched alkylene group which may have an ether bond; n a0 represents an integer of 0 to 2; n a012 represents an integer of 1 to 4; Ra 02 represents a hydrocarbon group which may have a substituent; Ra 040 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; and Ra 050 to Ra 070 each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; provided that Ra 02 , Ra 030 , Ra 060 and Ra 070 are not bonded to each other. 2. A polymeric compound comprising a structural unit (a0) derived from the compound represented by general formula (a0-1-1) or (a0-1-2) according to claim 1 . 3. A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition comprising: a resin component (A1) which exhibits changed solubility in a developing solution under action of acid, the resin component (A1) comprising a structural unit (a0) derived from the compound represented by general formula (a0-1-1) or (a0-1-2) according to claim 1 . 4. A method of forming a resist pattern, comprising: forming a resist film using the resist composition according to claim 3 ; exposing the resist film, and developing the exposed resist film to form a resist pattern.
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