Film of quantum dot, method for patterning the same and quantum dot light emitting device using the same

Patent metadata

Field	Value
Publication number	US-11056650-B2
Application number	US-201916377885-A
Country	US
Kind code	B2
Filing date	Apr 8, 2019
Priority date	Apr 9, 2018
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

The present disclosure provides a quantum dot thin film that is formed by cross-linking ligands of quantum dots with a photo cross-linker containing two or more azide groups. According to still another aspect of the present disclosure, a method for forming a quantum dot pattern includes: forming a quantum dot layer on a substrate by coating the substrate with a solution including quantum dots and a photo cross-linker containing two or more azide groups; placing a mask having a pattern on the quantum dot layer and performing UV exposure on the quantum dot layer; and forming a quantum dot pattern by removing a non-exposed region of the quantum dot layer.

First claim

We claim:

1. A quantum dot thin film, comprising:
quantum dots,
wherein the quantum dots are linked by cross-linking ligands surrounding the quantum dots with a photo cross-linker containing two or more azide groups, and,
wherein a distance between the quantum dots is increased by the ligands and the photo cross linker.

2. The quantum dot thin film of claim 1 ,
wherein the quantum dot thin film is patterned with a first quantum dot pattern, a second quantum dot pattern, and a third quantum dot pattern.

3. A quantum dot light emitting device, comprising:
a first electrode;
a second electrode spaced from the first electrode; and
the quantum dot thin film according to claim 1 which is located between the first electrode and the second electrode.

4. A substrate on which a quantum dot pattern is formed, comprising:
a quantum dot thin film patterned with a first quantum dot pattern, a second quantum dot pattern, and a third quantum dot pattern on the substrate,
wherein the quantum dot thin film includes quantum dots,
wherein the quantum dots are surrounded by ligands,
wherein the ligands surrounding the quantum dots are cross-linked by a photo cross-linker containing two or more azide groups, and,
wherein a distance between the quantum dots is increased by the ligands and the photo cross linker.

5. The substrate of claim 4 ,
wherein the first to third quantum dot patterns include first to third quantum dots having different sizes.

6. The substrate of claim 5 ,
wherein the first to third quantum dots emit light of red (R), green (G), and blue (B) colors, respectively.

7. The substrate of claim 5 ,
wherein the first to third quantum dot patterns are formed in parallel on the same layer on the substrate.

8. The substrate of claim 5 ,
wherein the first to third quantum dot patterns are laminated vertically on the substrate.

9. The substrate of claim 5 ,
wherein the first and second quantum dot patterns are formed in parallel on the same layer on the substrate and the third quantum dot pattern is formed on the first and second quantum dot patterns.

Assignees

• Foundation Soongsil Univ Industry Cooperation
• Univ Sogang Res & Business Development Found

Inventors

• Kang Moon Sung
• Cho Jeong Ho
• Yang Jee Hye

Classifications

• H10K71/40

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

• H10K71/233

  by photolithographic etching · CPC title

• H10K50/11 Primary

  characterised by the electroluminescent [EL] layers · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/01

  Manufacture or treatment · CPC title