Display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11056511-B2
Application number	US-202016846240-A
Country	US
Kind code	B2
Filing date	Apr 10, 2020
Priority date	Jan 25, 2018
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

A display apparatus including a first thin film transistor disposed on a substrate and including a first gate electrode and a first active layer including a silicon semiconductor, and a second thin film transistor disposed on the first thin film transistor and including a second gate electrode and a second active layer overlapping the first thin film transistor, the second active layer including an oxide semiconductor.

First claim

What is claimed is:

1. A display apparatus comprising:
a first thin film transistor disposed on a substrate and comprising a first gate electrode and a first active layer comprising a silicon semiconductor;
a second thin film transistor disposed on the first thin film transistor and comprising a second gate electrode and a second active layer overlapping the first thin film transistor, the second active layer comprising an oxide semiconductor;
a first capacitor comprising an upper electrode and a lower electrode; and
a conductive layer disposed between the first thin film transistor and the second thin film transistor,
wherein the lower electrode of the first capacitor comprises the first gate electrode of the first thin film transistor, and the upper electrode of the first capacitor comprises the conductive layer.

2. The display apparatus of claim 1 , wherein the conductive layer is configured to be applied with a direct current (DC) voltage.

3. The display apparatus of claim 2 , wherein the direct current (DC) voltage is applied to the conductive layer in at least a light-emitting section of the display apparatus.

4. The display apparatus of claim 2 , wherein a size of the conductive layer is greater than a size of the second gate electrode of the second thin film transistor.

5. The display apparatus of claim 1 , wherein a center of the conductive layer is shifted from a center of the second gate electrode of the second thin film transistor.

6. The display apparatus of claim 1 , wherein a thickness of the second active layer is less than a thickness of the first active layer.

7. The display apparatus of claim 1 , wherein a thickness of the second active layer is less than or equal to about 80% of a thickness of the first active layer.

8. The display apparatus of claim 1 , further comprising a display element disposed on the second thin film transistor, the display element overlapping the first thin film transistor and/or the second thin film transistor.

9. The display apparatus of claim 8 , wherein the display element is electrically connected to the first thin film transistor and/or the second thin film transistor.

10. The display apparatus of claim 1 , further comprising a third thin film transistor comprising a third active layer extending from the first active layer.

11. The display apparatus of claim 1 , further comprising a second capacitor disposed on the second thin film transistor and at least partially overlapping the second active layer.

12. A display apparatus comprising:
a first thin film transistor disposed on a substrate and comprising a first gate electrode and a first active layer;
a second thin film transistor disposed on the first thin film transistor and comprising a second gate electrode and a second active layer;
a conductive layer disposed between the first thin film transistor and the second thin film transistor;
a first capacitor disposed on the second thin film transistor and at least partially overlapping the second active layer;
a second capacitor comprising a lower electrode and an upper electrode; and
at least one electrode electrically connecting the first active layer and the second active layer,
wherein the lower electrode of the second capacitor is the first gate electrode of the first thin film transistor, and the upper electrode of the second capacitor is the conductive layer.

13. The display apparatus of claim 12 , wherein the at least one electrode comprises a first electrode contacting to the first active layer and a second electrode contacting to the second active layer, and
wherein the first electrode contacts to the second electrode.

14. The display apparatus of claim 13 , wherein the first electrode and the second electrode comprise the same metal material.

15. The display apparatus of claim 12 , further comprising a first voltage line disposed on a layer between the first thin film transistor and the first capacitor,
wherein the first voltage line is electrically connected to the first thin film transistor.

16. The display apparatus of claim 12 , further comprising a third thin film transistor comprising a third gate electrode and a third active layer,
wherein the third gate electrode and the first gate electrode are on a same layer and the third active layer and the first active layer are on a same layer.

17. The display apparatus of claim 16 , further comprising a second voltage line disposed on a layer between the third thin film transistor and the first capacitor, wherein the second voltage line is electrically connected to the third thin film transistor.

Assignees

• Samsung Display Co Ltd

Inventors

• Chung Yunmo
• Lee Daewoo
• SEO ILhun
• YOON Hojin

Classifications

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/451 Primary

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/427

  having different thicknesses of the semiconductor bodies in different TFTs · CPC title

• H10D86/021

  of multiple TFTs · CPC title