Wafer with beveled edge region and method for analyzing shape of the same

Patent metadata

Field	Value
Publication number	US-11056403-B2
Application number	US-201816173031-A
Country	US
Kind code	B2
Filing date	Oct 29, 2018
Priority date	Nov 1, 2017
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

Embodiments provide a method of analyzing a shape of a wafer, including: measuring a cross-sectional shape of a plurality of wafers; obtaining a first angle formed by a first line connecting a first point to a second point having a maximum curvature in an edge region of the wafer and a front surface of the wafer; forming a thin film layer on a surface of each of the wafers; measuring a thickness profile of an edge region of the wafer on which each of the thin film layers is formed; and confirming a wafer having a smallest maximum thickness profile of the thin film layer among the plurality of wafers.

First claim

What is claimed is:

1. A wafer comprising:
a bulk region;
a front surface and a back surface of the bulk region opposite and parallel to each other; and
an edge region disposed at an edge of the bulk region,
wherein the edge region includes a bevel portion and an apex of an edge thereof,
wherein the bevel portion includes a first point having a maximum curvature and a second point spaced apart in a direction of the apex from the first point, which are disposed in order from the front surface toward the apex,
wherein a first angle formed by a first line connecting the first point to the second point and a front surface of the wafer is 22 degrees or less, and
wherein the second point is positioned at a distance of 50 to 90 micrometers in a horizontal direction from a start point of the bevel portion of the edge region of the wafer.

2. The wafer of claim 1 , wherein the first angle formed by the first line connecting the first point to the second point and the front surface of the wafer is 18 degrees or more.

3. The wafer of claim 1 , wherein the bevel portion in the edge region of the wafer has a height, and the second point has a height difference within 10% from the front surface of the wafer.

4. The wafer of claim 1 , wherein the bevel portion in the edge region of the wafer has a height, and the first point has a height difference within 2.0% from the front surface of the wafer.

Assignees

• Sk Siltron Co Ltd

Inventors

• Lee Woo Sung
• Lee Eung Ju

Classifications

• H10P90/128

  by edge treatment, e.g. chamfering · CPC title

• H10P90/18

  by shaping · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• H10W46/201

  located on the periphery of wafers, e.g. orientation notches or lot numbers · CPC title