Micro LED carrier board

Patent metadata

Field	Value
Publication number	US-11056375-B2
Application number	US-201916720854-A
Country	US
Kind code	B2
Filing date	Dec 19, 2019
Priority date	Feb 27, 2019
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

A micro LED carrier board is provided. The micro LED carrier board includes a substrate structure having a first surface and a second surface and having a central region and a peripheral region on the outside of the central region. The micro LED carrier board includes a plurality of micro LED elements forming an array and on the second surface of the substrate structure. The micro LED carrier board includes a patterned structure formed on the first surface and the second surface. The patterned structure has a first pattern density in the central region and a second pattern density in the peripheral region, and the first pattern density is different from the second pattern density.

First claim

What is claimed is:

1. A micro light-emitting diode carrier board, comprising:
a substrate structure having a first surface and a second surface and having a central region and a peripheral region located outside the central region;
a plurality of micro light-emitting diode elements forming an array and located on the second surface of the substrate structure; and
a patterned structure formed on the first surface or the second surface, wherein the plurality of micro light-emitting diode elements is overlapped and disposed on the patterned structure, the patterned structure has a first pattern density in the central region and has a second pattern density in the peripheral region, and the first pattern density is different from the second pattern density.

2. The micro light-emitting diode carrier board as claimed in claim 1 , wherein when a straight line sequentially passes through a center point of the central region, an edge of the central region, the peripheral region, and an edge of the substrate structure, there is a first linear distance from the center point of the central region to the edge of the substrate structure, there is a second linear distance from the center point to the edge of the central region, and the second linear distance is not more than 0.8 times the distance of the first linear distance.

3. The micro light-emitting diode carrier board as claimed in claim 2 , wherein the patterned structure comprises:
a plurality of trenches formed on the first surface of the substrate structure, wherein the trenches are formed only in the peripheral region.

4. The micro light-emitting diode carrier board as claimed in claim 3 , wherein the plurality of trenches extend from the edge of the substrate structure toward the central region and are spaced apart from each other.

5. The micro light-emitting diode carrier board as claimed in claim 1 , wherein the patterned structure comprises:
a plurality of trenches formed on the first surface of the substrate structure, wherein the plurality of trenches are annular and arranged in a concentric shape.

6. The micro light-emitting diode carrier board as claimed in claim 5 , wherein two adjacent trenches are spaced apart by a first space in the central region, wherein two adjacent trenches are spaced apart by a second space in the peripheral region, and wherein the second space is smaller than the first space.

7. The micro light-emitting diode carrier board as claimed in claim 5 , wherein the plurality of trenches are formed only in the peripheral region.

8. The micro light-emitting diode carrier board as claimed in claim 5 , wherein the substrate structure has a thickness, wherein each of the trenches has a trench depth, and wherein the trench depth is 10-70% of the thickness.

9. The micro light-emitting diode carrier board as claimed in claim 5 , wherein each of the micro light-emitting diode elements has an element width, wherein each of the trenches has a trench width, and wherein the trench width is less than the element width.

10. The micro light-emitting diode carrier board as claimed in claim 5 , wherein one or more trenches overlap one micro light-emitting diode element.

11. The micro light-emitting diode carrier board as claimed in claim 2 , wherein the patterned structure comprises:
a buffering material formed on the first surface of the substrate structure and located in the peripheral region, wherein the buffering material surrounds the central region.

12. The micro light-emitting diode carrier board as claimed in claim 2 , wherein the patterned structure comprises:
a protruding portion formed on the first surface of the substrate structure and located in the central region.

13. The micro light-emitting diode carrier board as claimed in claim 12 , wherein the protruding portion is integrated with the substrate structure.

14. The micro light-emitting diode carrier board as claimed in claim 12 , wherein the patterned structure is a patterned film adhering on the first surface of the substrate structure.

15. The micro light-emitting diode carrier board as claimed in claim 1 , wherein the patterned structure comprises:
a plurality of trenches formed on the second surface of the substrate structure, wherein a density of the trenches is reduced from the peripheral region toward the central region.

16. The micro light-emitting diode carrier board as claimed in claim 15 , wherein the plurality of trenches are arranged only in the peripheral region.

17. A micro light-emitting diode carrier board, comprising:
a plurality of micro light-emitting diode elements; and
a substrate structure having a central region and a peripheral region, wherein the substrate structure comprises:
a substrate having an upper surface and a lower surface; and
a bonding layer formed on the lower surface and having a first thickness in the central region, wherein the bonding layer has a second thickness in the peripheral region, and the first thickness is greater than the second thickness and a ratio of the first thickness to the second thickness is 1.1-3.0;
wherein the micro light-emitting diode elements are disposed on the bonding layer and form an array.

Assignees

• Playnitride Display Co Ltd

Inventors

• Chen Pei-Hsin
• Chen Yi-Ching
• Li Yu-Chu
• Shih Yi-Chun
• Liu Ying-Tsang
• Lai Yu-Hung
• Lin Tzu-Yang

Classifications

• H10W90/00

  Package configurations · CPC title

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

• H10P72/0446

  Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/7428

  used to support diced chips prior to mounting · CPC title