Amplifier circuit devices and methods

Patent metadata

Field	Value
Publication number	US-11056163-B2
Application number	US-202016945793-A
Country	US
Kind code	B2
Filing date	Jul 31, 2020
Priority date	Nov 16, 2018
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

In a particular implementation, an apparatus including first and second bias circuits and an inner amplifier provides sense amplifier offset cancellation. The inner amplifier includes: first and second current generators configured to replicate respective first and second currents from the first and second bias circuits, first and second transistors configured to transform the first and second currents into voltage samples, and first and second capacitors configured to store the voltage samples. In a sampling phase, a sampling of the first and second currents may be performed in the inner amplifier, and further, in an amplification phase, an amplification of the stored voltage samples may also be performed in the inner amplifier.

First claim

What is claimed is:

1. An amplifier circuit comprising:
first and second transistors configured to transform respective first and second currents into voltage samples, and
first and second capacitors configured to store the voltage samples, wherein the amplifier circuit performs a sampling of the stored voltage samples in a sampling phase, and wherein the amplifier circuit performs an amplification of the stored voltage samples in an amplification phase.

2. The amplifier circuit of claim 1 , wherein the inner amplifier circuit is configured to determine if the stored voltage samples corresponding to bit memory elements indicate a high resistive state or a low resistive state.

3. The amplifier circuit of claim 1 , further comprising first and second current generators configured to generate the respective first and second currents and a power supply that is coupled to the amplifier circuit.

4. The amplifier circuit of claim 3 , further comprising first and second bias circuits, wherein the first and second bias circuits are coupled between respective first and second inputs and the power supply.

5. The amplifier circuit of claim 1 , further comprising:
a first switch configured to decouple a first output port of the amplifier circuit and a node coupling a gate of the first transistor device and the first capacitor; and
a second switch configured to decouple a second output port of the amplifier circuit and a node coupling a gate of the second transistor device and the second capacitor.

6. The amplifier circuit of claim 5 , wherein during the sampling phase, a first reference memory element is coupled to the first input and a first bit memory element is coupled to the second input, and wherein during the amplification phase, the first bit memory element is coupled to the first input and a second reference memory element is coupled to the second input.

7. The amplifier circuit of claim 6 , wherein the first and second reference memory elements and the first bit memory element comprise one of a resistive-based memory and a current-based memory.

8. The amplifier circuit of claim 6 , wherein a coupling of the first switch, at the first output of the amplifier circuit and the node coupling the gate of the first transistor device and the first capacitor, and a coupling of the second switch, at the second output of the amplifier circuit, and the node coupling the gate of the second transistor device and the second capacitor are configured to initiate the sampling phase.

9. The amplifier circuit of claim 6 , wherein a decoupling of the first switch, at the first output, and the node coupling the gate of the first transistor device and the first capacitor, and a decoupling of the first switch, at the second output, and the node coupling the gate of the second transistor device and the second capacitor are configured to initiate the amplification phase.

10. The amplifier circuit of claim 9 , wherein during the amplification phase, an output voltage, based on a combination of a bit current of the bit memory element and a reference current of the first and second reference memory elements, corresponds to the bit memory element having one of a low resistive state and a high resistive state.

11. The amplifier circuit of claim 1 , wherein the amplifier circuit further comprises: first and second current generators configured to generate the respective first and second currents and first and second common-mode transistor devices, wherein the first and second common-mode transistor devices are configured to control common-mode voltage during the amplification phase.

12. The amplifier circuit of claim 1 , wherein the first and second current generators comprise respective first and second PMOS devices or PNP devices, and wherein the first and second transistors comprise first and second NMOS or NPN devices, and wherein a gate of the first common-mode transistor device is coupled to a drain of the first PMOS transistor device on a first circuit branch of the amplifier circuit, and wherein a gate of the second common-mode transistor device is coupled to a drain of the second PMOS transistor device on a second circuit branch of the amplifier circuit.

13. The amplifier circuit of claim 1 , wherein the amplifier circuit comprises a folded offset cancelled sense amplifier or a telescopic offset cancelled sense amplifier.

14. The amplifier circuit of claim 13 , wherein the folded offset cancelled sense amplifier or the telescopic offset cancelled sense amplifier is integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

15. The amplifier circuit of claim 13 , wherein the folded offset cancelled sense amplifier or the telescopic offset cancelled sense amplifier is integrated into a memory array comprising a plurality of folded offset cancelled sense amplifiers or telescopic offset cancelled sense amplifiers.

16. A method comprising:
in a sampling phase:
receiving, in an amplifier circuit, a first reference current and a bit current;
converting, at respective first and second transistors, the first reference current into a first voltage sample and the bit current into a second voltage sample; and
storing, at respective first and second capacitors of the inner amplifier circuit, the first and second voltage samples; and

in an amplification phase:
receiving, in the amplifier circuit, the bit current and a second reference current;
and
determining, at a node between a first current generator and the first transistor device, and at a node between a second current generator and the second transistor device, first and second output voltages.

17. The method of claim 16 , wherein the first and second output voltages correspond to a bit memory element associated with the bit current having one of a low resistive state and a high resistive state.

18. The method of claim 17 , wherein the first output voltage is determined based on a combination of a current or voltage associated with the first voltage sample and the second bit current, and the second output voltage is determined based on a combination of another current or voltage associated with the second voltage sample and the second reference current.

19. The method of claim 16 , further comprising: providing the first and second reference current from first and second reference memory elements coupled to the amplifier circuit, and providing the bit current from a bit memory element coupled to the amplifier circuit.

20. An amplifier circuit comprising:
first and second current generators configured to generate respective first and second bias currents;
first and second transistors configured to transform the first and second bias currents into voltage samples; and
first and second capacitors configured to store the voltage samples.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Boujamaa El Mehdi
• Dray Cyrille Nicolas

Classifications

• G11C2013/0057

  Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value · CPC title

• H03F3/45475

  using IC blocks as the active amplifying circuit · CPC title

• H03F3/45183

  Long tailed pairs (H03F3/4521, H03F3/45237 take precedence) · CPC title

• H03F1/301

  in MOSFET amplifiers (H03F1/303, H03F1/305, H03F1/308 take precedence) · CPC title

• G11C11/1673 Primary

  Reading or sensing circuits or methods · CPC title