Third alternative design for magnetic recording assisted by one or two spin hall effect (SHE) layers in the write gap

Patent metadata

Field	Value
Publication number	US-11056136-B2
Application number	US-202016919936-A
Country	US
Kind code	B2
Filing date	Jul 2, 2020
Priority date	Nov 12, 2019
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer and a conductor layer (CL) are formed between a main pole (MP) trailing side and a trailing shield (TS). When the SHE layer is a negative Spin Hall Angle (SHA) material, current (I a ) flows from the SHE layer across the CL to a lead back to a source, or across the CL to one of the MP and TS. For a SHE layer with a positive SHA material, Ia flows from one of the MP or TS or from a lead across the CL to the SHE layer. Spin polarized current in the SHE layer applies spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field, or that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.

First claim

I claim:

1. A Spin Hall Effect (SHE) assisted magnetic recording (SHAMR) structure, comprising:
(a) a main pole (MP) having a MP tip with a front side at an air bearing surface (ABS), and with a local magnetization that is proximate to a MP trailing side and substantially in a direction of a write gap (WG) flux field between the MP tip and a trailing shield and across a WG;
(b) the trailing shield (TS) with a front side at the ABS, and a local magnetization proximate to a bottom surface that faces the MP trailing side, and substantially in a direction of the WG flux field;
(c) a Spin Hall Effect layer (SHE1) formed in the WG, and comprised of a negative Spin Hall Angle (SHA) material; and
(d) a conductor layer made of a non-magnetic metal that contacts SHE1, and wherein the SHE1 is configured to generate a transverse spin transfer torque that tilts one of the local MP magnetization and local TS magnetization to a direction that enhances a MP write field and increases a TS return field, respectively, when a current (I a ) flows from a direct current (dc) source through a first lead to SHE1 and then to the conductor layer before returning to the dc source through a second lead.

2. The SHAMR structure of claim 1 wherein a front portion of SHE1 adjoins the MP trailing side and the conductor is separated from the TS by a WG layer so that the MP write field is enhanced when I a is applied, and wherein the conductor layer is attached to the second lead.

3. The SHAMR structure of claim 1 wherein a front portion of SHE1 adjoins the TS bottom surface and the conductor layer is separated from the MP by a WG layer so that the TS return field is enhanced when I a is applied, and wherein the conductor layer is attached to the second lead.

4. The SHAMR structure of claim 1 wherein a front portion of SHE1 adjoins the MP trailing side, and the conductor layer extends from the SHE1 to the TS bottom surface and has a uniform height (k) between a front side at the ABS and a backside so that the MP write field is enhanced when I a is applied, and wherein I a flows from SHE1 across the conductor layer to the TS before returning to the dc source from the TS through the second lead.

5. The SHAMR structure of claim 1 wherein a front portion of SHE1 adjoins the TS bottom surface and the conductor layer extends from MP trailing side to SHE1 and has a uniform height (k) between a front side at the ABS and a backside so that the TS return field is enhanced when I a is applied, and wherein I a flows from SHE1 across the conductor layer to the MP before returning to the dc source from the MP through the second lead.

6. The SHAMR structure of claim 1 wherein the conductor layer is one of Ru, Ti, Zr, and Hf.

7. The SHAMR structure of claim 1 wherein SHE1 has an absolute value for SHA that is ≥0.05.

8. The SHAMR structure of claim 1 wherein I a has no threshold current density requirement in order for SHE1 to generate the transverse spin transfer torque.

9. A head gimbal assembly (HGA), comprising:
(a) the SHAMR structure of claim 1 ; and
(b) a suspension that elastically supports the SHAMR structure, wherein the suspension has a flexure to which the SHAMR structure is joined, a load beam with one end connected to the flexure, and a base plate connected to the other end of the load beam.

10. A magnetic recording apparatus, comprising:
(a) the HGA of claim 9 ;
(b) a magnetic recording medium positioned opposite to a slider on which the SHAMR structure is formed;
(c) a spindle motor that rotates and drives the magnetic recording medium; and
(d) a device that supports the slider, and that positions the slider relative to the magnetic recording medium.

11. A Spin Hall Effect (SHE) assisted magnetic recording (SHAMR) structure, comprising:
(a) a main pole (MP) having a MP tip with a front side at an air bearing surface (ABS), and with a local magnetization that is proximate to a MP trailing side and substantially in a direction of a write gap (WG) flux field between the MP tip and a trailing shield and across a WG;
(b) the trailing shield (TS) with a front side at the ABS, and a local magnetization proximate to a bottom surface that faces the MP trailing side, and substantially in a direction of the WG flux field;
(c) a Spin Hall Effect layer (SHE2) formed in the WG, and comprised of a positive Spin Hall Angle (SHA) material; and
(d) a conductor layer made of a non-magnetic metal that contacts SHE2, and wherein the SHE2 is configured to generate a transverse spin transfer torque that tilts one of the local MP magnetization and local TS magnetization to a direction that enhances a MP write field and increases a TS return field, respectively, when a current (I a ) flows from a direct current (dc) source through a pathway comprised of a first lead to the conductor layer and then to SHE2 before returning to the dc source through a second lead.

12. The SHAMR structure of claim 11 wherein a front portion of SHE2 adjoins the MP trailing side and the conductor is separated from the TS by a WG layer so that the MP write field is enhanced when I a is applied, and wherein SHE2 is attached to the second lead.

13. The SHAMR structure of claim 11 wherein a front portion of SHE2 adjoins the TS bottom surface and the conductor layer is separated from the MP by a WG layer so that the TS return field is enhanced when I a is applied, and wherein the SHE2 is attached to the second lead.

14. The SHAMR structure of claim 11 wherein a front portion of SHE2 adjoins the MP trailing side, and the conductor layer extends from the SHE2 to the TS bottom surface and has a uniform height (k) between a front side at the ABS and a backside so that the MP write field is enhanced when I a is applied, and wherein I a flows from the first lead to the TS and then across the conductor layer to SHE2 before returning to the dc source through the second lead.

15. The SHAMR structure of claim 11 wherein a front portion of SHE2 adjoins the TS bottom surface and the conductor layer extends from MP trailing side to the SHE2 and has a uniform height (k) between a front side at the ABS and a backside so that the TS return field is enhanced when I a is applied, and wherein I a flows from the first lead to the MP and then across the conductor layer to SHE2 before returning to the dc source through the second lead.

16. The SHAMR structure of claim 11 wherein the conductor layer is one of Ru, Ti, Zr, and Hf.

17. The SHAMR structure of claim 11 wherein SHE2 has a SHA value that is >0.05.

18. The SHAMR structure of claim 11 wherein I a has no threshold current density requirement in order for SHE2 to generate the transverse spin transfer torque.

19. A head gimbal assembly (HGA), comprising:
(a) the SHAMR structure of claim 11 ; and
(b) a suspension that elastically supports the SHAMR structure, wherein the suspension has a flexure to which the SHAMR structure is joined, a load beam with one end connected to the flexure, and a base plate connected to the other end of the load beam.

20. A magnetic recording apparatus, comprising:
(a) the HGA of claim 19 ;
(b) a magnetic recording medium positioned opposite to a slider on which the SHAMR structure is formed;
(c) a spindle motor that rotates and drives the magnetic recording medium; and
(d) a device that supports the slider, and that positions the slider relative to the magnetic recording medium.

Assignees

• Headway Tech Inc

Inventors

• Chen Wenyu

Classifications

• G11B5/37

  using galvano-magnetic devices, e.g. Hall-effect devices (G11B5/39 takes precedence){using Hall or Hall-related effect, e.g. planar-Hall effect or pseudo-Hall effect} · CPC title

• G11B5/3146 Primary

  magnetic layers · CPC title

• G01R33/091

  Constructional adaptation of the sensor to specific applications · CPC title

• G01R33/093

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G11B5/1278

  specially adapted for magnetisations perpendicular to the surface of the record carrier · CPC title